177 related articles for article (PubMed ID: 34251796)
1. Tunable Synaptic Characteristics of a Ti/TiO
Yang J; Cho H; Ryu H; Ismail M; Mahata C; Kim S
ACS Appl Mater Interfaces; 2021 Jul; 13(28):33244-33252. PubMed ID: 34251796
[TBL] [Abstract][Full Text] [Related]
2. Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO
Choi J; Kim S
Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 33003640
[TBL] [Abstract][Full Text] [Related]
3. Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device.
Khan SA; Lee GH; Mahata C; Ismail M; Kim H; Kim S
Nanomaterials (Basel); 2021 Jan; 11(2):. PubMed ID: 33513672
[TBL] [Abstract][Full Text] [Related]
4. Short-Term Memory Dynamics of TiN/Ti/TiO
Cho H; Kim S
Nanomaterials (Basel); 2020 Sep; 10(9):. PubMed ID: 32932656
[TBL] [Abstract][Full Text] [Related]
5. Programmable Retention Characteristics in MoS
Lee Y; Huang Y; Chang YF; Yang SJ; Ignacio ND; Kutagulla S; Mohan S; Kim S; Lee J; Akinwande D; Kim S
ACS Nano; 2024 Jun; 18(22):14327-14338. PubMed ID: 38767980
[TBL] [Abstract][Full Text] [Related]
6. Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing.
Ju D; Lee J; Kim S; Cho S
J Chem Phys; 2024 Jul; 161(1):. PubMed ID: 38953444
[TBL] [Abstract][Full Text] [Related]
7. Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al
Ryu H; Kim S
Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33080978
[TBL] [Abstract][Full Text] [Related]
8. Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering.
Lee J; Ryu JH; Kim B; Hussain F; Mahata C; Sim E; Ismail M; Abbas Y; Abbas H; Lee DK; Kim MH; Kim Y; Choi C; Park BG; Kim S
ACS Appl Mater Interfaces; 2020 Jul; 12(30):33908-33916. PubMed ID: 32608233
[TBL] [Abstract][Full Text] [Related]
9. IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing.
Lee S; Park Y; Jung S; Kim S
J Chem Phys; 2023 Dec; 159(23):. PubMed ID: 38099552
[TBL] [Abstract][Full Text] [Related]
10. Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO
Ju D; Koo M; Kim S
Materials (Basel); 2023 Nov; 16(23):. PubMed ID: 38068068
[TBL] [Abstract][Full Text] [Related]
11. Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system.
Park J; Ryu H; Kim S
Sci Rep; 2021 Aug; 11(1):16601. PubMed ID: 34400734
[TBL] [Abstract][Full Text] [Related]
12. Artificial Neurons and Synapses Based on Al/a-SiN
Leng K; Zhu X; Ma Z; Yu X; Xu J; Xu L; Li W; Chen K
Nanomaterials (Basel); 2022 Jan; 12(3):. PubMed ID: 35159656
[TBL] [Abstract][Full Text] [Related]
13. Area-Type Electronic Bipolar Switching Al/TiO
Yan Y; Li JC; Chen YT; Wang XY; Cai GR; Park HW; Kim JH; Zhao JS; Hwang CS
ACS Appl Mater Interfaces; 2021 Aug; 13(33):39561-39572. PubMed ID: 34378371
[TBL] [Abstract][Full Text] [Related]
14. Bipolar Resistive Switching in TiO
Jena AK; Sahu MC; Mohanan KU; Mallik SK; Sahoo S; Pradhan GK; Sahoo S
ACS Appl Mater Interfaces; 2023 Jan; 15(2):3574-3585. PubMed ID: 36595219
[TBL] [Abstract][Full Text] [Related]
15. Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate.
Rahmani MK; Kim MH; Hussain F; Abbas Y; Ismail M; Hong K; Mahata C; Choi C; Park BG; Kim S
Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32455892
[TBL] [Abstract][Full Text] [Related]
16. Reservoir Computing with Charge-Trap Memory Based on a MoS
Farronato M; Mannocci P; Melegari M; Ricci S; Compagnoni CM; Ielmini D
Adv Mater; 2023 Sep; 35(37):e2205381. PubMed ID: 36222391
[TBL] [Abstract][Full Text] [Related]
17. SnO
Ismail M; Mahata C; Kang M; Kim S
Nanomaterials (Basel); 2023 Sep; 13(18):. PubMed ID: 37764635
[TBL] [Abstract][Full Text] [Related]
18. Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.
Wang R; Shi T; Zhang X; Wang W; Wei J; Lu J; Zhao X; Wu Z; Cao R; Long S; Liu Q; Liu M
Materials (Basel); 2018 Oct; 11(11):. PubMed ID: 30373122
[TBL] [Abstract][Full Text] [Related]
19. Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems.
Kim J; Lee S; Seo Y; Kim S
J Chem Phys; 2024 Apr; 160(14):. PubMed ID: 38587228
[TBL] [Abstract][Full Text] [Related]
20. Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing.
Pyo J; Jang J; Ju D; Lee S; Shim W; Kim S
Materials (Basel); 2023 Oct; 16(20):. PubMed ID: 37895680
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]