These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

167 related articles for article (PubMed ID: 34436371)

  • 1. Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating.
    Yang H; Liang Z; Fu X; Xu Z; Ning H; Liu X; Lin J; Pan Y; Yao R; Peng J
    Membranes (Basel); 2021 Aug; 11(8):. PubMed ID: 34436371
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films.
    Pan Y; Liang X; Liang Z; Yao R; Ning H; Zhong J; Chen N; Qiu T; Wei X; Peng J
    Membranes (Basel); 2022 Jun; 12(7):. PubMed ID: 35877844
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.
    Woods KN; Chiang TH; Plassmeyer PN; Kast MG; Lygo AC; Grealish AK; Boettcher SW; Page CJ
    ACS Appl Mater Interfaces; 2017 Mar; 9(12):10897-10903. PubMed ID: 28262013
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Solution-processed amorphous ZrO
    Seon JB; Cho NK; Yoo G; Kim YS; Char K
    RSC Adv; 2018 Nov; 8(68):39115-39119. PubMed ID: 35558330
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor.
    Oluwabi AT; Gaspar D; Katerski A; Mere A; Krunks M; Pereira L; Oja Acik I
    Materials (Basel); 2019 Dec; 13(1):. PubMed ID: 31861357
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Flexible High-Entropy Poly(vinyl alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor.
    Liang Z; Wu W; Fu X; Ning H; Xu W; Xiong X; Qiu T; Luo C; Yao R; Peng J
    J Phys Chem Lett; 2023 Oct; 14(41):9245-9249. PubMed ID: 37812073
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.
    Park JH; Oh JY; Han SW; Lee TI; Baik HK
    ACS Appl Mater Interfaces; 2015 Mar; 7(8):4494-503. PubMed ID: 25664940
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.
    Plassmeyer PN; Archila K; Wager JF; Page CJ
    ACS Appl Mater Interfaces; 2015 Jan; 7(3):1678-84. PubMed ID: 25532438
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High-
    Wang G; Liu D; Fan S; Li Z; Su J
    Nanotechnology; 2021 Mar; 32(21):. PubMed ID: 33556929
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Atmospheric-pressure plasma treatment toward high-quality solution-processed aluminum oxide gate dielectric films in thin-film transistors.
    Park J; Cho NK; Lee SE; Lee EG; Lee J; Im C; Na HJ; Kim YS
    Nanotechnology; 2019 Dec; 30(49):495702. PubMed ID: 31476746
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Water assisted atomic layer deposition of yttrium oxide using tris(
    Mai L; Boysen N; Subaşı E; Arcos TL; Rogalla D; Grundmeier G; Bock C; Lu HL; Devi A
    RSC Adv; 2018 Jan; 8(9):4987-4994. PubMed ID: 35539551
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Sol-Gel PMMA-ZrO
    Alvarado-Beltrán CG; Almaral-Sánchez JL; Mejia I; Quevedo-López MA; Ramirez-Bon R
    ACS Omega; 2017 Oct; 2(10):6968-6974. PubMed ID: 31457280
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Environmentally stable flexible metal-insulator-metal capacitors using zirconium-silicate and hafnium-silicate thin film composite materials as gate dielectrics.
    Meena JS; Chu MC; Wu CS; Ravipati S; Ko FH
    J Nanosci Nanotechnol; 2011 Aug; 11(8):6858-67. PubMed ID: 22103091
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
    Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.
    Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Baik HK
    ACS Appl Mater Interfaces; 2013 Jan; 5(2):410-7. PubMed ID: 23267443
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route.
    Koslowski N; Hoffmann RC; Trouillet V; Bruns M; Foro S; Schneider JJ
    RSC Adv; 2019 Oct; 9(54):31386-31397. PubMed ID: 35527957
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Structure and Dielectric Property of High-k ZrO
    Liu J; Li J; Wu J; Sun J
    Nanoscale Res Lett; 2019 May; 14(1):154. PubMed ID: 31065821
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
    Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Lee HW; Han SW; Baik HK
    ACS Appl Mater Interfaces; 2013 Aug; 5(16):8067-75. PubMed ID: 23883390
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.