These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

143 related articles for article (PubMed ID: 34442923)

  • 1. Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100).
    Calabretta C; Scuderi V; Anzalone R; Mauceri M; Crippa D; Cannizzaro A; Boninelli S; La Via F
    Materials (Basel); 2021 Aug; 14(16):. PubMed ID: 34442923
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy.
    Scuderi V; Zielinski M; La Via F
    Materials (Basel); 2023 May; 16(10):. PubMed ID: 37241451
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis.
    Scuderi V; Calabretta C; Anzalone R; Mauceri M; La Via F
    Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32295087
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC.
    Calabretta C; Scuderi V; Bongiorno C; Cannizzaro A; Anzalone R; Calcagno L; Mauceri M; Crippa D; Boninelli S; La Via F
    Cryst Growth Des; 2022 Aug; 22(8):4996-5003. PubMed ID: 35942119
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers.
    Anzalone R; Zimbone M; Calabretta C; Mauceri M; Alberti A; Reitano R; La Via F
    Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31658766
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates.
    Wang L; Walker G; Chai J; Iacopi A; Fernandes A; Dimitrijev S
    Sci Rep; 2015 Oct; 5():15423. PubMed ID: 26487465
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Suppression of 3
    Masumoto K; Asamizu H; Tamura K; Kudou C; Nishio J; Kojima K; Ohno T; Okumura H
    Materials (Basel); 2014 Oct; 7(10):7010-7021. PubMed ID: 28788228
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Ultraviolet-visible light photoluminescence induced by stacking faults in 3C-SiC nanowires.
    Yu H; Wang Q; Yang L; Dai B; Zhu J; Han J
    Nanotechnology; 2019 Jun; 30(23):235601. PubMed ID: 30907378
    [TBL] [Abstract][Full Text] [Related]  

  • 9. In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition.
    Lai Y; Xia L; Xu Q; Li Q; Liu K; Yang M; Zhang S; Han M; Goto T; Zhang L; Tu R
    Materials (Basel); 2020 Jan; 13(2):. PubMed ID: 31952320
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Synthesis of SiC/SiO
    Chen BY; Chi CC; Hsu WK; Ouyang H
    Sci Rep; 2021 Jan; 11(1):233. PubMed ID: 33420336
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.
    Liu B; Yang B; Yuan F; Liu Q; Shi D; Jiang C; Zhang J; Staedler T; Jiang X
    Nano Lett; 2015 Dec; 15(12):7837-46. PubMed ID: 26517395
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process.
    Steiner J; Wellmann PJ
    Materials (Basel); 2022 Mar; 15(5):. PubMed ID: 35269127
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth.
    Schuh P; la Via F; Mauceri M; Zielinski M; Wellmann PJ
    Materials (Basel); 2019 Jul; 12(13):. PubMed ID: 31284618
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The effect of substrate type on SiC nanowire orientation.
    Attolini G; Rossi F; Bosi M; Watts BE; Salviati G
    J Nanosci Nanotechnol; 2011 May; 11(5):4109-13. PubMed ID: 21780413
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate.
    Colston G; Turner K; Renz A; Perera K; Gammon PM; Antoniou M; Shah VA
    Materials (Basel); 2024 Mar; 17(7):. PubMed ID: 38612100
    [TBL] [Abstract][Full Text] [Related]  

  • 16. 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate.
    Zimbone M; Zielinski M; Bongiorno C; Calabretta C; Anzalone R; Scalese S; Fisicaro G; La Magna A; Mancarella F; La Via F
    Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31635213
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC.
    Yuan W; Pei Y; Li Y; Guo N; Zhang X; Liu X
    Micromachines (Basel); 2024 Apr; 15(5):. PubMed ID: 38793173
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition.
    Kim KH; Ha MT; Lee H; Kim M; Nam O; Shin YJ; Jeong SM; Bae SY
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35161000
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications.
    Meli A; Muoio A; Trotta A; Meda L; Parisi M; La Via F
    Materials (Basel); 2021 Feb; 14(4):. PubMed ID: 33669492
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique.
    Dai L; Liu SF; Fu ZX; You LP; Zhu JJ; Lin BX; Zhang JC; Qin GG
    J Chem Phys; 2005 Mar; 122(10):104713. PubMed ID: 15836351
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.