These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

161 related articles for article (PubMed ID: 34464085)

  • 1. Seed Dibbling Method for the Growth of High-Quality Diamond on GaN.
    Soleimanzadeh R; Naamoun M; Floriduz A; Khadar RA; van Erp R; Matioli E
    ACS Appl Mater Interfaces; 2021 Sep; 13(36):43516-43523. PubMed ID: 34464085
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes.
    Kagawa R; Cheng Z; Kawamura K; Ohno Y; Moriyama C; Sakaida Y; Ouchi S; Uratani H; Inoue K; Nagai Y; Shigekawa N; Liang J
    Small; 2024 Mar; 20(13):e2305574. PubMed ID: 37964293
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling.
    Malakoutian M; Field DE; Hines NJ; Pasayat S; Graham S; Kuball M; Chowdhury S
    ACS Appl Mater Interfaces; 2021 Dec; 13(50):60553-60560. PubMed ID: 34875169
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond.
    Kim ZS; Lee HS; Bae SB; Nam E; Lim JW
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6119-6122. PubMed ID: 31026919
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices.
    Cheng Z; Mu F; Yates L; Suga T; Graham S
    ACS Appl Mater Interfaces; 2020 Feb; 12(7):8376-8384. PubMed ID: 31986013
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design.
    Liang J; Kobayashi A; Shimizu Y; Ohno Y; Kim SW; Koyama K; Kasu M; Nagai Y; Shigekawa N
    Adv Mater; 2021 Oct; 33(43):e2104564. PubMed ID: 34498296
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.
    Tanaka A; Choi W; Chen R; Dayeh SA
    Adv Mater; 2017 Oct; 29(38):. PubMed ID: 28833605
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch.
    Yu X; Li Y; He R; Wen Y; Chen R; Xu B; Gao Y
    Nanoscale Horiz; 2024 Jul; ():. PubMed ID: 39016031
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates.
    Kim ZS; Lee HS; Bae SB; Ahn H; Lee SH; Lim JW; Kang DM
    J Nanosci Nanotechnol; 2021 Aug; 21(8):4429-4433. PubMed ID: 33714339
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review.
    Zhan T; Xu M; Cao Z; Zheng C; Kurita H; Narita F; Wu YJ; Xu Y; Wang H; Song M; Wang W; Zhou Y; Liu X; Shi Y; Jia Y; Guan S; Hanajiri T; Maekawa T; Okino A; Watanabe T
    Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004933
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.
    Field DE; Cuenca JA; Smith M; Fairclough SM; Massabuau FC; Pomeroy JW; Williams O; Oliver RA; Thayne I; Kuball M
    ACS Appl Mater Interfaces; 2020 Dec; 12(48):54138-54145. PubMed ID: 33196180
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Probing Growth-Induced Anisotropic Thermal Transport in High-Quality CVD Diamond Membranes by Multifrequency and Multiple-Spot-Size Time-Domain Thermoreflectance.
    Cheng Z; Bougher T; Bai T; Wang SY; Li C; Yates L; Foley BM; Goorsky M; Cola BA; Faili F; Graham S
    ACS Appl Mater Interfaces; 2018 Feb; 10(5):4808-4815. PubMed ID: 29328632
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Diamond/GaN HEMTs: Where from and Where to?
    Mendes JC; Liehr M; Li C
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057131
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices.
    Yates L; Anderson J; Gu X; Lee C; Bai T; Mecklenburg M; Aoki T; Goorsky MS; Kuball M; Piner EL; Graham S
    ACS Appl Mater Interfaces; 2018 Jul; 10(28):24302-24309. PubMed ID: 29939717
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.
    Zhou Y; Anaya J; Pomeroy J; Sun H; Gu X; Xie A; Beam E; Becker M; Grotjohn TA; Lee C; Kuball M
    ACS Appl Mater Interfaces; 2017 Oct; 9(39):34416-34422. PubMed ID: 28901127
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers.
    Guo H; Li Y; Yu X; Zhou J; Kong Y
    Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144109
    [TBL] [Abstract][Full Text] [Related]  

  • 17. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.
    Wang W; Wang H; Yang W; Zhu Y; Li G
    Sci Rep; 2016 Apr; 6():24448. PubMed ID: 27101930
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates.
    Lee SM; Yum JH; Yoon S; Larsen ES; Lee WC; Kim SK; Shervin S; Wang W; Ryou JH; Bielawski CW; Oh J
    ACS Appl Mater Interfaces; 2017 Dec; 9(48):41973-41979. PubMed ID: 29148718
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Boron-Doped Diamond/GaN Heterojunction-The Influence of the Low-Temperature Deposition.
    Sobaszek M; Gnyba M; Kulesza S; Bramowicz M; Klimczuk T; Bogdanowicz R
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771852
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.
    Pantle F; Becker F; Kraut M; Wörle S; Hoffmann T; Artmeier S; Stutzmann M
    Nanoscale Adv; 2021 Jun; 3(13):3835-3845. PubMed ID: 36133019
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.