261 related articles for article (PubMed ID: 34521198)
1. Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS
Tsai PC; Huang CW; Chang SJ; Chang SW; Lin SY
ACS Appl Mater Interfaces; 2021 Sep; 13(38):45864-45869. PubMed ID: 34521198
[TBL] [Abstract][Full Text] [Related]
2. Persistent charge storage and memory operation of top-gate transistors solely based on two-dimensional molybdenum disulfide.
Tsai PC; Yan CR; Chang SJ; Chang SW; Lin SY
Nanotechnology; 2023 May; 34(30):. PubMed ID: 37100046
[TBL] [Abstract][Full Text] [Related]
3. In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers.
Tsai PC; Huang CW; Chang SJ; Chang SW; Lin SY
Sci Rep; 2023 Jun; 13(1):9197. PubMed ID: 37280332
[TBL] [Abstract][Full Text] [Related]
4. Comparative Study between Sulfurized MoS
Fatima S; Gu Y; Yang SJ; Kutagulla S; Rizwan S; Akinwande D
ACS Appl Mater Interfaces; 2023 Mar; 15(12):16308-16316. PubMed ID: 36939015
[TBL] [Abstract][Full Text] [Related]
5. Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum.
Miwa JA; Dendzik M; Grønborg SS; Bianchi M; Lauritsen JV; Hofmann P; Ulstrup S
ACS Nano; 2015 Jun; 9(6):6502-10. PubMed ID: 26039108
[TBL] [Abstract][Full Text] [Related]
6. Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures.
Pierucci D; Henck H; Naylor CH; Sediri H; Lhuillier E; Balan A; Rault JE; Dappe YJ; Bertran F; Fèvre PL; Johnson ATC; Ouerghi A
Sci Rep; 2016 Jun; 6():26656. PubMed ID: 27246929
[TBL] [Abstract][Full Text] [Related]
7. Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.
Rathi S; Lee I; Lim D; Wang J; Ochiai Y; Aoki N; Watanabe K; Taniguchi T; Lee GH; Yu YJ; Kim P; Kim GH
Nano Lett; 2015 Aug; 15(8):5017-24. PubMed ID: 26091357
[TBL] [Abstract][Full Text] [Related]
8. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.
Samad L; Bladow SM; Ding Q; Zhuo J; Jacobberger RM; Arnold MS; Jin S
ACS Nano; 2016 Jul; 10(7):7039-46. PubMed ID: 27373305
[TBL] [Abstract][Full Text] [Related]
9. Low-Voltage and High-Performance Multilayer MoS
Singh AK; Hwang C; Eom J
ACS Appl Mater Interfaces; 2016 Dec; 8(50):34699-34705. PubMed ID: 27998114
[TBL] [Abstract][Full Text] [Related]
10. Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS
Khan MA; Rathi S; Lee C; Lim D; Kim Y; Yun SJ; Youn DH; Kim GH
ACS Appl Mater Interfaces; 2018 Jul; 10(28):23961-23967. PubMed ID: 29938500
[TBL] [Abstract][Full Text] [Related]
11. Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures.
Zhang YW; Li JY; Wu CH; Chang CY; Chang SW; Shih MH; Lin SY
Sci Rep; 2020 Apr; 10(1):5967. PubMed ID: 32249852
[TBL] [Abstract][Full Text] [Related]
12. Charge-Ferroelectric Transition in Ultrathin Na
Liu X; Zhou X; Pan Y; Yang J; Xiang H; Yuan Y; Liu S; Luo H; Zhang D; Sun J
Adv Mater; 2020 Dec; 32(49):e2004813. PubMed ID: 33145852
[TBL] [Abstract][Full Text] [Related]
13. Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.
Shi ML; Chen L; Zhang TB; Xu J; Zhu H; Sun QQ; Zhang DW
Small; 2017 Sep; 13(35):. PubMed ID: 28639331
[TBL] [Abstract][Full Text] [Related]
14. Graphene-Molybdenum Disulfide-Graphene Tunneling Junctions with Large-Area Synthesized Materials.
Joiner CA; Campbell PM; Tarasov AA; Beatty BR; Perini CJ; Tsai MY; Ready WJ; Vogel EM
ACS Appl Mater Interfaces; 2016 Apr; 8(13):8702-9. PubMed ID: 26987383
[TBL] [Abstract][Full Text] [Related]
15. Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal-Organic Vapor-Phase Epitaxy and Their Application in Photodetectors.
Hoang AT; Katiyar AK; Shin H; Mishra N; Forti S; Coletti C; Ahn JH
ACS Appl Mater Interfaces; 2020 Sep; 12(39):44335-44344. PubMed ID: 32877158
[TBL] [Abstract][Full Text] [Related]
16. Nucleation and Growth of Monolayer MoS
Jung Y; Ryu H; Kim H; Moon D; Joo J; Hong SC; Kim J; Lee GH
ACS Nano; 2023 Apr; 17(8):7865-7871. PubMed ID: 37052379
[TBL] [Abstract][Full Text] [Related]
17. Nonvolatile memory cells based on MoS2/graphene heterostructures.
Bertolazzi S; Krasnozhon D; Kis A
ACS Nano; 2013 Apr; 7(4):3246-52. PubMed ID: 23510133
[TBL] [Abstract][Full Text] [Related]
18. van der Waals Epitaxial Formation of Atomic Layered α-MoO
Yoon A; Kim JH; Yoon J; Lee Y; Lee Z
ACS Appl Mater Interfaces; 2020 May; 12(19):22029-22036. PubMed ID: 32298075
[TBL] [Abstract][Full Text] [Related]
19. Atomic layer MoS
Ye F; Lee J; Feng PX
Nanoscale; 2017 Nov; 9(46):18208-18215. PubMed ID: 29160324
[TBL] [Abstract][Full Text] [Related]
20. Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures.
Liu K; Yan Q; Chen M; Fan W; Sun Y; Suh J; Fu D; Lee S; Zhou J; Tongay S; Ji J; Neaton JB; Wu J
Nano Lett; 2014 Sep; 14(9):5097-103. PubMed ID: 25120033
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
