These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
183 related articles for article (PubMed ID: 34524280)
1. Interface dependence of electrical contact and graphene doping in graphene/XPtY (X, Y = S, Se, and Te) heterostructures. Ju W; Wang D; Zhou Q; Kang D; Li T; Hu G; Li H Phys Chem Chem Phys; 2021 Sep; 23(35):19297-19307. PubMed ID: 34524280 [TBL] [Abstract][Full Text] [Related]
2. Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures. Qin X; Hu W; Yang J Phys Chem Chem Phys; 2019 Nov; 21(42):23611-23619. PubMed ID: 31624813 [TBL] [Abstract][Full Text] [Related]
3. Tunable Schottky barrier in Janus- Guo H; Lang X; Tian X; Jiang W; Wang G Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35817003 [TBL] [Abstract][Full Text] [Related]
4. First-principles study on the electronic structures and contact properties of graphene/XC (X = P, As, Sb, and Bi) van der Waals heterostructures. Hu X; Liu W; Yang J; Zhang S; Ye Y Phys Chem Chem Phys; 2021 Nov; 23(44):25136-25142. PubMed ID: 34729574 [TBL] [Abstract][Full Text] [Related]
5. Dipole controlled Schottky barrier in the blue-phosphorene-phase of GeSe based van der Waals heterostructures. Peng L; Cui Y; Sun L; Du J; Wang S; Zhang S; Huang Y Nanoscale Horiz; 2019 Mar; 4(2):480-489. PubMed ID: 32254101 [TBL] [Abstract][Full Text] [Related]
6. The role of permanent and induced electrostatic dipole moments for Schottky barriers in Janus MXY/graphene heterostructures: a first-principles study. Chen YQ; Zhang HH; Wen B; Li XB; Wei XL; Yin WJ; Liu LM; Teobaldi G Dalton Trans; 2022 Jun; 51(25):9905-9914. PubMed ID: 35722990 [TBL] [Abstract][Full Text] [Related]
7. Electronic properties and interfacial contact of graphene/CrSiTe Chen L; Jiang C; Yang M; Wang D; Shi C; Liu H; Cui G; Li X; Shi J Phys Chem Chem Phys; 2022 Feb; 24(7):4280-4286. PubMed ID: 35107454 [TBL] [Abstract][Full Text] [Related]
8. Tunable interlayer coupling and Schottky barrier in graphene and Janus MoSSe heterostructures by applying an external field. Li Y; Wang J; Zhou B; Wang F; Miao Y; Wei J; Zhang B; Zhang K Phys Chem Chem Phys; 2018 Oct; 20(37):24109-24116. PubMed ID: 30204181 [TBL] [Abstract][Full Text] [Related]
9. Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain. Zhang WX; Yin Y; He C Phys Chem Chem Phys; 2020 Nov; 22(45):26231-26240. PubMed ID: 33174552 [TBL] [Abstract][Full Text] [Related]
10. Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures. Vu TV; Dao TP; Idrees M; Phuc HV; Hieu NN; Binh NTT; Dinh HB; Amin B; Nguyen CV Phys Chem Chem Phys; 2020 Apr; 22(15):7952-7961. PubMed ID: 32232260 [TBL] [Abstract][Full Text] [Related]
11. Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe Lan Y; Xia LX; Huang T; Xu W; Huang GF; Hu W; Huang WQ Nanoscale Res Lett; 2020 Sep; 15(1):180. PubMed ID: 32955632 [TBL] [Abstract][Full Text] [Related]
12. Electronic properties of a two-dimensional van der Waals MoGe Pham DK RSC Adv; 2021 Aug; 11(46):28659-28666. PubMed ID: 35478545 [TBL] [Abstract][Full Text] [Related]
14. Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure. Wang S; Chou JP; Ren C; Tian H; Yu J; Sun C; Xu Y; Sun M Sci Rep; 2019 Mar; 9(1):5208. PubMed ID: 30914666 [TBL] [Abstract][Full Text] [Related]
15. Interface contact and modulated electronic properties by in-plain strains in a graphene-MoS Wang Q; Song Z; Tao J; Jin H; Li S; Wang Y; Liu X; Zhang L RSC Adv; 2023 Jan; 13(5):2903-2911. PubMed ID: 36756432 [TBL] [Abstract][Full Text] [Related]