These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
42. Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment. Park SH; Mishra D; Eugene Pak Y; Kang K; Park CY; Yoo SH; Cho YH; Shim MB; Kim S Opt Express; 2014 Jun; 22(12):14850-8. PubMed ID: 24977580 [TBL] [Abstract][Full Text] [Related]
43. Strain engineering of nanowire multi-quantum well demonstrated by Raman spectroscopy. Wölz M; Ramsteiner M; Kaganer VM; Brandt O; Geelhaar L; Riechert H Nano Lett; 2013 Sep; 13(9):4053-9. PubMed ID: 24001176 [TBL] [Abstract][Full Text] [Related]
44. UV Emission from GaN Wires with Grenier V; Finot S; Jacopin G; Bougerol C; Robin E; Mollard N; Gayral B; Monroy E; Eymery J; Durand C ACS Appl Mater Interfaces; 2020 Sep; 12(39):44007-44016. PubMed ID: 32894670 [TBL] [Abstract][Full Text] [Related]
46. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells. Chouchen B; Gazzah MH; Bajahzar A; Belmabrouk H Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31014013 [TBL] [Abstract][Full Text] [Related]
47. Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array. Guo W; Yang Z; Li J; Yang X; Zhang Y; Wang J; Chee KWA; Gao P; Ye J Nanoscale; 2017 Oct; 9(40):15477-15483. PubMed ID: 28976517 [TBL] [Abstract][Full Text] [Related]
48. Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth. Park MJ; Kwon KW; Kim YH; Park SH; Kwak JS J Nanosci Nanotechnol; 2011 May; 11(5):4484-7. PubMed ID: 21780482 [TBL] [Abstract][Full Text] [Related]
49. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In Zscherp MF; Jentsch SA; Müller MJ; Lider V; Becker C; Chen L; Littmann M; Meier F; Beyer A; Hofmann DM; As DJ; Klar PJ; Volz K; Chatterjee S; Schörmann J ACS Appl Mater Interfaces; 2023 Aug; 15(33):39513-39522. PubMed ID: 37530411 [TBL] [Abstract][Full Text] [Related]
50. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer. Hu H; Zhou S; Wan H; Liu X; Li N; Xu H Sci Rep; 2019 Mar; 9(1):3447. PubMed ID: 30837579 [TBL] [Abstract][Full Text] [Related]
51. Strain effect on the optical polarization properties of c-plane Al₀.₂₆Ga₀.₇₄N/GaN superlattices. Fan S; Qin Z; He C; Wang X; Shen B; Zhang G Opt Express; 2014 Mar; 22(6):6322-8. PubMed ID: 24663980 [TBL] [Abstract][Full Text] [Related]
52. Threshold gain analysis in GaN-based photonic crystal surface emitting lasers. Weng PH; Wu TT; Lu TC; Wang SC Opt Lett; 2011 May; 36(10):1908-10. PubMed ID: 21593931 [TBL] [Abstract][Full Text] [Related]
53. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays. Huang YY; Chen LY; Chang CH; Sun YH; Cheng YW; Ke MY; Lu YH; Kuo HC; Huang J Nanotechnology; 2011 Jan; 22(4):045202. PubMed ID: 21157011 [TBL] [Abstract][Full Text] [Related]
54. Suspended GaN-based band-edge type photonic crystal nanobeam cavities. Wu TT; Chen HW; Lan YP; Lu TC; Wang SC Opt Express; 2014 Feb; 22(3):2317-23. PubMed ID: 24663524 [TBL] [Abstract][Full Text] [Related]
55. Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography. Byeon KJ; Cho JY; Kim J; Park H; Lee H Opt Express; 2012 May; 20(10):11423-32. PubMed ID: 22565762 [TBL] [Abstract][Full Text] [Related]
56. Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes. Cho HK; Jang J; Choi JH; Choi J; Kim J; Lee JS; Lee B; Choe YH; Lee KD; Kim SH; Lee K; Kim SK; Lee YH Opt Express; 2006 Sep; 14(19):8654-60. PubMed ID: 19529246 [TBL] [Abstract][Full Text] [Related]
57. Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes. Park AH; Chandramohan S; Seo TH; Lee GH; Min KH; Hong CH; Kim MJ; Suh EK Nanotechnology; 2016 Jul; 27(27):275602. PubMed ID: 27232210 [TBL] [Abstract][Full Text] [Related]
58. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires. You G; Liu J; Jiang Z; Wang L; El-Masry NA; Hosalli AM; Bedair SM; Xu J Opt Lett; 2014 Mar; 39(6):1501-4. PubMed ID: 24690823 [TBL] [Abstract][Full Text] [Related]
59. High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). Liu R; Schaller R; Chen CQ; Bayram C ACS Photonics; 2018; 5(3):955-963. PubMed ID: 30775407 [TBL] [Abstract][Full Text] [Related]
60. Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes. Tsai CL; Wu WC Materials (Basel); 2014 May; 7(5):3758-3771. PubMed ID: 28788647 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]