These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

137 related articles for article (PubMed ID: 34577688)

  • 1. Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method.
    Tang H; Lu K; Xu Z; Ning H; Yao D; Fu X; Yang H; Luo D; Yao R; Peng J
    Micromachines (Basel); 2021 Aug; 12(9):. PubMed ID: 34577688
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping.
    Xu H; Xu M; Li M; Chen Z; Zou J; Wu W; Qiao X; Tao H; Wang L; Ning H; Ma D; Peng J
    ACS Appl Mater Interfaces; 2019 Feb; 11(5):5232-5239. PubMed ID: 30640426
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance.
    Hu S; Lu K; Ning H; Yao R; Gong Y; Pan Z; Guo C; Wang J; Pang C; Gong Z; Peng J
    Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33670767
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Improving Thermal Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors by Praseodymium Oxide Doping.
    Li M; Zhang W; Chen W; Li M; Wu W; Xu H; Zou J; Tao H; Wang L; Xu M; Peng J
    ACS Appl Mater Interfaces; 2018 Aug; 10(34):28764-28771. PubMed ID: 30074382
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Improved Electrical Performance of SiO₂-Doped Indium Zinc Oxide Thin-Film Transistor.
    Lim Y; Hwang N; Lee J; Lee S; Yi M
    J Nanosci Nanotechnol; 2019 Mar; 19(3):1470-1473. PubMed ID: 30469207
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes.
    Zhang X; Lu K; Xu Z; Ning H; Lin Z; Qiu T; Yang Z; Zeng X; Yao R; Peng J
    Membranes (Basel); 2021 Apr; 11(5):. PubMed ID: 33946591
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Improvement in the Electrical Performance of Ge-Doped InZnO Thin-Film Transistor.
    Im YJ; Kim SJ; Shin JH; Ha SS; Park CH; Yi M
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7537-41. PubMed ID: 26726366
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.
    Hsu MH; Chang SP; Chang SJ; Wu WT; Li JY
    Nanomaterials (Basel); 2017 Jun; 7(7):. PubMed ID: 28672868
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al₂O₃ Nanolaminate Structure Processed at Room Temperature.
    Yao R; Li X; Zheng Z; Zhang X; Xiong M; Xiao S; Ning H; Wang X; Wu Y; Peng J
    Materials (Basel); 2018 Oct; 11(10):. PubMed ID: 30275382
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.
    Lestari AD; Putri M; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2020 Jan; 20(1):252-256. PubMed ID: 31383163
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Electrical performance of La-doped In
    Du H; Tuokedaerhan K; Zhang R
    RSC Adv; 2024 May; 14(22):15483-15490. PubMed ID: 38807708
    [TBL] [Abstract][Full Text] [Related]  

  • 13. One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature.
    Wang C; Li Y; Jin Y; Guo G; Song Y; Huang H; He H; Wang A
    Nanomaterials (Basel); 2022 Oct; 12(19):. PubMed ID: 36234608
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics.
    Tiwari N; Rajput M; John RA; Kulkarni MR; Nguyen AC; Mathews N
    ACS Appl Mater Interfaces; 2018 Sep; 10(36):30506-30513. PubMed ID: 30129368
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors.
    Wang C; Guo L; Lei M; Wang C; Chu X; Yang F; Gao X; Wamg H; Chi Y; Yang X
    Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889620
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability.
    Son DH; Kim DH; Park SN; Sung SJ; Kang JK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8163-6. PubMed ID: 25958492
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate.
    Han D; Zhang Y; Cong Y; Yu W; Zhang X; Wang Y
    Sci Rep; 2016 Dec; 6():38984. PubMed ID: 27941915
    [TBL] [Abstract][Full Text] [Related]  

  • 18. High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition.
    Baek IH; Pyeon JJ; Han SH; Lee GY; Choi BJ; Han JH; Chung TM; Hwang CS; Kim SK
    ACS Appl Mater Interfaces; 2019 Apr; 11(16):14892-14901. PubMed ID: 30945837
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor.
    Lee D; Choi P; Park A; Jeon W; Choi D; Lee S; Choi B
    J Nanosci Nanotechnol; 2020 Nov; 20(11):6675-6678. PubMed ID: 32604495
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature.
    Yan X; Song K; Li B; Zhang Y; Yang F; Wang Y; Wang C; Chi Y; Yang X
    Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422452
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.