These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
148 related articles for article (PubMed ID: 34578711)
21. The structural properties of GaN/AlN core-shell nanocolumn heterostructures. Hestroffer K; Mata R; Camacho D; Leclere C; Tourbot G; Niquet YM; Cros A; Bougerol C; Renevier H; Daudin B Nanotechnology; 2010 Oct; 21(41):415702. PubMed ID: 20844326 [TBL] [Abstract][Full Text] [Related]
22. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers. Li R; Hussain K; Liao ME; Huynh K; Hoque MSB; Wyant S; Koh YR; Xu Z; Wang Y; Luccioni DP; Cheng Z; Shi J; Lee E; Graham S; Henry A; Hopkins PE; Goorsky MS; Khan MA; Luo T ACS Appl Mater Interfaces; 2024 Feb; 16(6):8109-8118. PubMed ID: 38315970 [TBL] [Abstract][Full Text] [Related]
23. Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy. Griffiths IJ; Cherns D; Albert S; Bengoechea-Encabo A; Angel Sanchez M; Calleja E; Schimpke T; Strassburg M J Microsc; 2016 May; 262(2):167-70. PubMed ID: 26366483 [TBL] [Abstract][Full Text] [Related]
24. Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control. Niu L; Hao Z; Hu J; Hu Y; Wang L; Luo Y Nanoscale Res Lett; 2011 Dec; 6(1):611. PubMed ID: 22136595 [TBL] [Abstract][Full Text] [Related]
25. The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene. Liudi Mulyo A; Rajpalke MK; Vullum PE; Weman H; Kishino K; Fimland BO Sci Rep; 2020 Jan; 10(1):853. PubMed ID: 31964934 [TBL] [Abstract][Full Text] [Related]
26. Strain effect on the optical polarization properties of c-plane Al₀.₂₆Ga₀.₇₄N/GaN superlattices. Fan S; Qin Z; He C; Wang X; Shen B; Zhang G Opt Express; 2014 Mar; 22(6):6322-8. PubMed ID: 24663980 [TBL] [Abstract][Full Text] [Related]
29. Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers. Liu CY; Zhang YC; Xu SR; Jiang L; Zhang JC; Hao Y Materials (Basel); 2019 Dec; 12(24):. PubMed ID: 31817364 [TBL] [Abstract][Full Text] [Related]
30. Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC) Talwar DN; Semone S; Becla P Materials (Basel); 2024 Jun; 17(13):. PubMed ID: 38998165 [TBL] [Abstract][Full Text] [Related]
31. Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies. Bah M; Valente D; Lesecq M; Defrance N; Garcia Barros M; De Jaeger JC; Frayssinet E; Comyn R; Ngo TH; Alquier D; Cordier Y Sci Rep; 2020 Aug; 10(1):14166. PubMed ID: 32843709 [TBL] [Abstract][Full Text] [Related]
32. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN. Kamarundzaman A; Abu Bakar AS; Azman A; Omar AZ; Talik NA; Supangat A; Abd Majid WH Sci Rep; 2021 May; 11(1):9724. PubMed ID: 33958689 [TBL] [Abstract][Full Text] [Related]
33. Thermal transport and phonon localization in periodic Chen J; Chen G; Wang Z J Phys Condens Matter; 2023 Oct; 36(4):. PubMed ID: 37852190 [TBL] [Abstract][Full Text] [Related]
34. Hybrid density functional theory studies of AlN and GaN under uniaxial strain. Qin L; Duan Y; Shi H; Shi L; Tang G J Phys Condens Matter; 2013 Jan; 25(4):045801. PubMed ID: 23248170 [TBL] [Abstract][Full Text] [Related]
35. Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer. Arteev DS; Sakharov AV; Lundin WV; Zavarin EE; Nikolaev AE; Tsatsulnikov AF; Ustinov VM Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556750 [TBL] [Abstract][Full Text] [Related]
36. Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources. Dimkou I; Harikumar A; Donatini F; Lähnemann J; den Hertog MI; Bougerol C; Bellet-Amalric E; Mollard N; Ajay A; Ledoux G; Purcell ST; Monroy E Nanotechnology; 2020 May; 31(20):204001. PubMed ID: 31986502 [TBL] [Abstract][Full Text] [Related]
37. Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111). Wang P; Wang D; Mondal S; Wu Y; Ma T; Mi Z ACS Appl Mater Interfaces; 2022 Apr; 14(13):15747-15755. PubMed ID: 35333528 [TBL] [Abstract][Full Text] [Related]
38. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates. Wu Y; Liu B; Li Z; Tao T; Xie Z; Wang K; Xiu X; Chen D; Lu H; Zhang R; Zheng Y Nanotechnology; 2020 Jan; 31(4):045604. PubMed ID: 31578003 [TBL] [Abstract][Full Text] [Related]
39. Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells. Ahmad A; Strak P; Koronski K; Kempisty P; Sakowski K; Piechota J; Grzegory I; Wierzbicka A; Kryvyi S; Monroy E; Kaminska A; Krukowski S Materials (Basel); 2021 Aug; 14(17):. PubMed ID: 34501025 [TBL] [Abstract][Full Text] [Related]
40. Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces. Kioseoglou J; Pontikis V; Komninou P; Pavloudis T; Chen J; Karakostas T J Phys Condens Matter; 2015 Apr; 27(12):125006. PubMed ID: 25693505 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]