134 related articles for article (PubMed ID: 34704446)
1. Carbon Nanotubes for Radiation-Tolerant Electronics.
Kanhaiya PS; Yu A; Netzer R; Kemp W; Doyle D; Shulaker MM
ACS Nano; 2021 Nov; 15(11):17310-17318. PubMed ID: 34704446
[TBL] [Abstract][Full Text] [Related]
2. Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length.
Pitner G; Hills G; Llinas JP; Persson KM; Park R; Bokor J; Mitra S; Wong HP
Nano Lett; 2019 Feb; 19(2):1083-1089. PubMed ID: 30677297
[TBL] [Abstract][Full Text] [Related]
3. Tunable n-Type Doping of Carbon Nanotubes through Engineered Atomic Layer Deposition HfO
Lau C; Srimani T; Bishop MD; Hills G; Shulaker MM
ACS Nano; 2018 Nov; 12(11):10924-10931. PubMed ID: 30285415
[TBL] [Abstract][Full Text] [Related]
4. Ultralow-Power and Radiation-Tolerant Complementary Metal-Oxide-Semiconductor Electronics Utilizing Enhancement-Mode Carbon Nanotube Transistors on Paper Substrates.
Wang X; Zhu M; Li X; Qin Z; Lu G; Zhao J; Zhang Z
Adv Mater; 2022 Oct; 34(40):e2204066. PubMed ID: 36030367
[TBL] [Abstract][Full Text] [Related]
5. Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics.
Zhu M; Lu P; Wang X; Chen Q; Zhu H; Zhang Y; Zhou J; Xu H; Han Z; Han J; Chen R; Li B; Peng LM; Zhang Z
Small; 2023 Jan; 19(1):e2204537. PubMed ID: 36366937
[TBL] [Abstract][Full Text] [Related]
6. Hysteresis-Free Carbon Nanotube Field-Effect Transistors.
Park RS; Hills G; Sohn J; Mitra S; Shulaker MM; Wong HP
ACS Nano; 2017 May; 11(5):4785-4791. PubMed ID: 28463503
[TBL] [Abstract][Full Text] [Related]
7. Modern microprocessor built from complementary carbon nanotube transistors.
Hills G; Lau C; Wright A; Fuller S; Bishop MD; Srimani T; Kanhaiya P; Ho R; Amer A; Stein Y; Murphy D; Arvind ; Chandrakasan A; Shulaker MM
Nature; 2019 Aug; 572(7771):595-602. PubMed ID: 31462796
[TBL] [Abstract][Full Text] [Related]
8. Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors.
Luo M; Zhu M; Wei M; Shao S; Robin M; Wei C; Cui Z; Zhao J; Zhang Z
ACS Appl Mater Interfaces; 2020 Nov; 12(44):49963-49970. PubMed ID: 33095560
[TBL] [Abstract][Full Text] [Related]
9. Carbon nanotube circuit integration up to sub-20 nm channel lengths.
Shulaker MM; Van Rethy J; Wu TF; Liyanage LS; Wei H; Li Z; Pop E; Gielen G; Wong HS; Mitra S
ACS Nano; 2014 Apr; 8(4):3434-43. PubMed ID: 24654597
[TBL] [Abstract][Full Text] [Related]
10. Power optimized variation aware dual-threshold SRAM cell design technique.
Islam A; Hasan M
Nanotechnol Sci Appl; 2011; 4():25-33. PubMed ID: 24198484
[TBL] [Abstract][Full Text] [Related]
11. Long term investigations of carbon nanotube transistors encapsulated by atomic-layer-deposited Al(2)O(3) for sensor applications.
Helbling T; Hierold C; Roman C; Durrer L; Mattmann M; Bright VM
Nanotechnology; 2009 Oct; 20(43):434010. PubMed ID: 19801765
[TBL] [Abstract][Full Text] [Related]
12. Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.
McMorrow JJ; Cress CD; Gaviria Rojas WA; Geier ML; Marks TJ; Hersam MC
ACS Nano; 2017 Mar; 11(3):2992-3000. PubMed ID: 28212000
[TBL] [Abstract][Full Text] [Related]
13. A statistical-based material and process guidelines for design of carbon nanotube field-effect transistors in gigascale integrated circuits.
Ghavami B; Raji M; Pedram H
Nanotechnology; 2011 Aug; 22(34):345706. PubMed ID: 21811011
[TBL] [Abstract][Full Text] [Related]
14. Self-assembly of carbon-nanotube-based single-electron memories.
Marty L; Bonnot AM; Bonhomme A; Iaia A; Naud C; André E; Bouchiat V
Small; 2006 Jan; 2(1):110-5. PubMed ID: 17193565
[TBL] [Abstract][Full Text] [Related]
15. High speed capacitor-inverter based carbon nanotube full adder.
Navi K; Rashtian M; Khatir A; Keshavarzian P; Hashemipour O
Nanoscale Res Lett; 2010 Mar; 5(5):859-62. PubMed ID: 20671796
[TBL] [Abstract][Full Text] [Related]
16. Linear increases in carbon nanotube density through multiple transfer technique.
Shulaker MM; Wei H; Patil N; Provine J; Chen HY; Wong HS; Mitra S
Nano Lett; 2011 May; 11(5):1881-6. PubMed ID: 21469727
[TBL] [Abstract][Full Text] [Related]
17. VLSI-compatible carbon nanotube doping technique with low work-function metal oxides.
Suriyasena Liyanage L; Xu X; Pitner G; Bao Z; Wong HS
Nano Lett; 2014; 14(4):1884-90. PubMed ID: 24628497
[TBL] [Abstract][Full Text] [Related]
18. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges.
Moriyama N; Ohno Y; Kitamura T; Kishimoto S; Mizutani T
Nanotechnology; 2010 Apr; 21(16):165201. PubMed ID: 20348598
[TBL] [Abstract][Full Text] [Related]
19. A review of carbon nanotube- and graphene-based flexible thin-film transistors.
Sun DM; Liu C; Ren WC; Cheng HM
Small; 2013 Apr; 9(8):1188-205. PubMed ID: 23519953
[TBL] [Abstract][Full Text] [Related]
20. The impact of Cr adhesion layer on CNFET electrical characteristics.
Liu W; Chikkadi K; Muoth M; Hierold C; Haluska M
Nanotechnology; 2016 Jan; 27(1):015201. PubMed ID: 26596783
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]