These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

156 related articles for article (PubMed ID: 34710322)

  • 1. Resistance Switching Behavior of a Perhydropolysilazane-Derived SiO
    Li P; Zhang Y; Guo Y; Jiang L; Zhang Z; Xu C
    J Phys Chem Lett; 2021 Nov; 12(44):10728-10734. PubMed ID: 34710322
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Analog Switching and Artificial Synaptic Behavior of Ag/SiO
    Ilyas N; Li D; Li C; Jiang X; Jiang Y; Li W
    Nanoscale Res Lett; 2020 Jan; 15(1):30. PubMed ID: 32006131
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Room-Temperature, Solution-Processed SiO
    Li P; Wang D; Zhang Z; Guo Y; Jiang L; Xu C
    ACS Appl Mater Interfaces; 2020 Dec; 12(50):56186-56194. PubMed ID: 33231429
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
    Kang YH; Min BK; Kim SK; Bae G; Song W; Lee C; Cho SY; An KS
    ACS Appl Mater Interfaces; 2020 Apr; 12(13):15396-15405. PubMed ID: 32148019
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Conversion of perhydropolysilazane into a SiOx network triggered by vacuum ultraviolet irradiation: access to flexible, transparent barrier coatings.
    Prager L; Dierdorf A; Liebe H; Naumov S; Stojanović S; Heller R; Wennrich L; Buchmeiser MR
    Chemistry; 2007; 13(30):8522-9. PubMed ID: 17639521
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Attojoule Hexagonal Boron Nitride-Based Memristor for High-Performance Neuromorphic Computing.
    Kim J; Song J; Kwak H; Choi CW; Noh K; Moon S; Hwang H; Hwang I; Jeong H; Choi SY; Kim S; Kim JK
    Small; 2024 Jul; ():e2403737. PubMed ID: 38949018
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Electrical Characteristics of CMOS-Compatible SiO
    Koryazhkina MN; Filatov DO; Tikhov SV; Belov AI; Serov DA; Kryukov RN; Zubkov SY; Vorontsov VA; Pavlov DA; Gryaznov EG; Orlova ES; Shchanikov SA; Mikhaylov AN; Kim S
    Nanomaterials (Basel); 2023 Jul; 13(14):. PubMed ID: 37513093
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Silicon Oxide (SiO
    Mehonic A; Shluger AL; Gao D; Valov I; Miranda E; Ielmini D; Bricalli A; Ambrosi E; Li C; Yang JJ; Xia Q; Kenyon AJ
    Adv Mater; 2018 Oct; 30(43):e1801187. PubMed ID: 29957849
    [TBL] [Abstract][Full Text] [Related]  

  • 9. The Atomic Oxygen Erosion Resistance Effect and Mechanism of the Perhydropolysilazane-Derived SiOx Coating Used on Polymeric Materials in Space Environment.
    Qi H; Shi Q; Qian Y; Li Y; Xu J; Xu C; Zhang Z; Xie X
    Polymers (Basel); 2022 Jan; 14(2):. PubMed ID: 35054728
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Controllable Switching Filaments Prepared via Tunable and Well-Defined Single Truncated Conical Nanopore Structures for Fast and Scalable SiO
    Kwon S; Jang S; Choi JW; Choi S; Jang S; Kim TW; Wang G
    Nano Lett; 2017 Dec; 17(12):7462-7470. PubMed ID: 29182342
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks.
    Kim H; Lee J; Kim HW; Woo J; Kim MH; Lee SH
    ACS Appl Mater Interfaces; 2023 Oct; ():. PubMed ID: 37874750
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Quantum conductors formation and resistive switching memory effects in zirconia nanotubes.
    Vokhmintsev A; Petrenyov I; Kamalov R; Weinstein I
    Nanotechnology; 2021 Nov; 33(7):. PubMed ID: 34624881
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Reliable Memristor Based on Ultrathin Native Silicon Oxide.
    Ma Z; Ge J; Chen W; Cao X; Diao S; Liu Z; Pan S
    ACS Appl Mater Interfaces; 2022 May; 14(18):21207-21216. PubMed ID: 35476399
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Three-Dimensional Reconstruction of Conductive Filaments in HfO
    Wei T; Lu Y; Zhang F; Tang J; Gao B; Yu P; Qian H; Wu H
    Adv Mater; 2023 Mar; 35(10):e2209925. PubMed ID: 36517930
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Vertical MoS
    Xu R; Jang H; Lee MH; Amanov D; Cho Y; Kim H; Park S; Shin HJ; Ham D
    Nano Lett; 2019 Apr; 19(4):2411-2417. PubMed ID: 30896171
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.
    Huang Y; Yu J; Kong Y; Wang X
    RSC Adv; 2022 Nov; 12(52):33634-33640. PubMed ID: 36505707
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene-SiO
    Pósa L; El Abbassi M; Makk P; Sánta B; Nef C; Csontos M; Calame M; Halbritter A
    Nano Lett; 2017 Nov; 17(11):6783-6789. PubMed ID: 28984461
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Three-dimensional crossbar arrays of self-rectifying Si/SiO
    Li C; Han L; Jiang H; Jang MH; Lin P; Wu Q; Barnell M; Yang JJ; Xin HL; Xia Q
    Nat Commun; 2017 Jun; 8():15666. PubMed ID: 28580928
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Dual Functions of V/SiO
    Kim S; Lin CY; Kim MH; Kim TH; Kim H; Chen YC; Chang YF; Park BG
    Nanoscale Res Lett; 2018 Aug; 13(1):252. PubMed ID: 30141145
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Switching mechanism in Au nanodot-embedded Nb2O5 memristors.
    Hota MK; Bera MK; Bera MK
    J Nanosci Nanotechnol; 2014 May; 14(5):3538-44. PubMed ID: 24734584
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.