312 related articles for article (PubMed ID: 34739218)
21. Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe
Wu E; Xie Y; Liu Q; Hu X; Liu J; Zhang D; Zhou C
ACS Nano; 2019 May; 13(5):5430-5438. PubMed ID: 30974935
[TBL] [Abstract][Full Text] [Related]
22. Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors.
Zheng W; Zheng B; Yan C; Liu Y; Sun X; Qi Z; Yang T; Jiang Y; Huang W; Fan P; Jiang F; Ji W; Wang X; Pan A
Adv Sci (Weinh); 2019 Apr; 6(7):1802204. PubMed ID: 30989032
[TBL] [Abstract][Full Text] [Related]
23. High-Performance Photovoltaic Detector Based on MoTe
Chen Y; Wang X; Wu G; Wang Z; Fang H; Lin T; Sun S; Shen H; Hu W; Wang J; Sun J; Meng X; Chu J
Small; 2018 Mar; 14(9):. PubMed ID: 29356363
[TBL] [Abstract][Full Text] [Related]
24. The First-Principles Study of External Strain Tuning the Electronic and Optical Properties of the 2D MoTe
Zhang L; Ren K; Cheng H; Cui Z; Li J
Front Chem; 2022; 10():934048. PubMed ID: 35958236
[TBL] [Abstract][Full Text] [Related]
25. High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface.
Shin HG; Kang D; Jeong Y; Kim K; Cho Y; Park J; Hong S; Yi Y; Im S
ACS Nano; 2020 Nov; 14(11):15646-15653. PubMed ID: 33136370
[TBL] [Abstract][Full Text] [Related]
26. Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS
Yang S; Wu M; Wang B; Zhao LD; Huang L; Jiang C; Wei SH
ACS Appl Mater Interfaces; 2017 Dec; 9(48):42149-42155. PubMed ID: 29134796
[TBL] [Abstract][Full Text] [Related]
27. Electrically and Optically Tunable Responses in Graphene/Transition-Metal-Dichalcogenide Heterostructures.
Zhao M; Song P; Teng J
ACS Appl Mater Interfaces; 2018 Dec; 10(50):44102-44108. PubMed ID: 30479118
[TBL] [Abstract][Full Text] [Related]
28. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.
Lee JY; Shin JH; Lee GH; Lee CH
Nanomaterials (Basel); 2016 Oct; 6(11):. PubMed ID: 28335321
[TBL] [Abstract][Full Text] [Related]
29. Defect Engineering of MoTe
Jeong Y; Han B; Tamayo A; Claes N; Bals S; Samorì P
ACS Nano; 2024 Jul; ():. PubMed ID: 38960378
[TBL] [Abstract][Full Text] [Related]
30. Modulating the Functions of MoS
Duong NT; Lee J; Bang S; Park C; Lim SC; Jeong MS
ACS Nano; 2019 Apr; 13(4):4478-4485. PubMed ID: 30938981
[TBL] [Abstract][Full Text] [Related]
31. Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS
Dastgeer G; Khan MF; Nazir G; Afzal AM; Aftab S; Naqvi BA; Cha J; Min KA; Jamil Y; Jung J; Hong S; Eom J
ACS Appl Mater Interfaces; 2018 Apr; 10(15):13150-13157. PubMed ID: 29578329
[TBL] [Abstract][Full Text] [Related]
32. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.
Samad L; Bladow SM; Ding Q; Zhuo J; Jacobberger RM; Arnold MS; Jin S
ACS Nano; 2016 Jul; 10(7):7039-46. PubMed ID: 27373305
[TBL] [Abstract][Full Text] [Related]
33. P-type laser-doped WSe
Chen J; Shan Y; Wang Q; Zhu J; Liu R
Nanotechnology; 2020 May; 31(29):295201. PubMed ID: 32268302
[TBL] [Abstract][Full Text] [Related]
34. Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe
Ahn J; Kang JH; Kyhm J; Choi HT; Kim M; Ahn DH; Kim DY; Ahn IH; Park JB; Park S; Yi Y; Song JD; Park MC; Im S; Hwang DK
ACS Appl Mater Interfaces; 2020 Mar; 12(9):10858-10866. PubMed ID: 32037787
[TBL] [Abstract][Full Text] [Related]
35. Tunable Ultrafast Nonlinear Optical Properties of Graphene/MoS
Sun X; Zhang B; Li Y; Luo X; Li G; Chen Y; Zhang C; He J
ACS Nano; 2018 Nov; 12(11):11376-11385. PubMed ID: 30335957
[TBL] [Abstract][Full Text] [Related]
36. Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors.
Iordanidou K; Mitra R; Shetty N; Lara-Avila S; Dash S; Kubatkin S; Wiktor J
ACS Appl Mater Interfaces; 2023 Jan; 15(1):1762-1771. PubMed ID: 36537996
[TBL] [Abstract][Full Text] [Related]
37. Observation of carrier transfer in a vertical 0D-CsPbBr
Qin C; Geng Y; Zhou Z; Song J; Ma S; Jia G; Jiao Z; Zhu Z; Jiang Y
Opt Express; 2023 Jan; 31(2):2593-2601. PubMed ID: 36785269
[TBL] [Abstract][Full Text] [Related]
38. Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.
Jariwala D; Sangwan VK; Wu CC; Prabhumirashi PL; Geier ML; Marks TJ; Lauhon LJ; Hersam MC
Proc Natl Acad Sci U S A; 2013 Nov; 110(45):18076-80. PubMed ID: 24145425
[TBL] [Abstract][Full Text] [Related]
39. Van der Waals MoS
Oliva N; Casu EA; Yan C; Krammer A; Rosca T; Magrez A; Stolichnov I; Schueler A; Martin OJF; Ionescu AM
Sci Rep; 2017 Oct; 7(1):14250. PubMed ID: 29079744
[TBL] [Abstract][Full Text] [Related]
40. Moiré-Assisted Strain Transfer in Vertical van der Waals Heterostructures.
Hu J; Yu L; Chen X; Lee W; Mate CM; Heinz TF
Nano Lett; 2023 Nov; 23(21):10051-10057. PubMed ID: 37903015
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
