These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
155 related articles for article (PubMed ID: 34779637)
1. Area-Selective Chemical Doping on Solution-Processed MoS Kim J; Jung M; Lim DU; Rhee D; Jung SH; Cho HK; Kim HK; Cho JH; Kang J Nano Lett; 2022 Jan; 22(2):570-577. PubMed ID: 34779637 [TBL] [Abstract][Full Text] [Related]
2. Selectively Metallized 2D Materials for Simple Logic Devices. Dathbun A; Kim Y; Choi Y; Sun J; Kim S; Kang B; Kang MS; Hwang DK; Lee S; Lee C; Cho JH ACS Appl Mater Interfaces; 2019 May; 11(20):18571-18579. PubMed ID: 31017757 [TBL] [Abstract][Full Text] [Related]
3. Modulating the Functions of MoS Duong NT; Lee J; Bang S; Park C; Lim SC; Jeong MS ACS Nano; 2019 Apr; 13(4):4478-4485. PubMed ID: 30938981 [TBL] [Abstract][Full Text] [Related]
4. Integrated Logic Circuits Based on Wafer-Scale 2D-MoS Lee JA; Yoon J; Hwang S; Hwang H; Kwon JD; Lee SK; Kim Y Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947714 [TBL] [Abstract][Full Text] [Related]
5. Multi-State Heterojunction Transistors Based on Field-Effect Tunneling-Transport Transitions. Lim DU; Jo SB; Kang J; Cho JH Adv Mater; 2021 Jul; 33(29):e2101243. PubMed ID: 34062014 [TBL] [Abstract][Full Text] [Related]
6. Distinctive Field-Effect Transistors and Ternary Inverters Using Cross-Type WSe Kim JY; Park HJ; Lee SH; Seo C; Kim J; Joo J ACS Appl Mater Interfaces; 2020 Aug; 12(32):36530-36539. PubMed ID: 32672032 [TBL] [Abstract][Full Text] [Related]
7. Defect-Engineered Atomically Thin MoS Gao L; Liao Q; Zhang X; Liu X; Gu L; Liu B; Du J; Ou Y; Xiao J; Kang Z; Zhang Z; Zhang Y Adv Mater; 2020 Jan; 32(2):e1906646. PubMed ID: 31743525 [TBL] [Abstract][Full Text] [Related]
8. Threshold Voltage Control of Multilayered MoS Roh J; Ryu JH; Baek GW; Jung H; Seo SG; An K; Jeong BG; Lee DC; Hong BH; Bae WK; Lee JH; Lee C; Jin SH Small; 2019 Feb; 15(7):e1803852. PubMed ID: 30637933 [TBL] [Abstract][Full Text] [Related]
9. Substitutional Fluorine Doping of Large-Area Molybdenum Disulfide Monolayer Films for Flexible Inverter Device Arrays. Chee SS; Jang H; Lee K; Ham MH ACS Appl Mater Interfaces; 2020 Jul; 12(28):31804-31809. PubMed ID: 32559366 [TBL] [Abstract][Full Text] [Related]
10. Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors. Lee SY; Lee SW; Kim SM; Yu WJ; Jo YW; Lee YH ACS Nano; 2011 Mar; 5(3):2369-75. PubMed ID: 21370895 [TBL] [Abstract][Full Text] [Related]
11. High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS Shin GH; Lee GB; An ES; Park C; Jin HJ; Lee KJ; Oh DS; Kim JS; Choi YK; Choi SY ACS Appl Mater Interfaces; 2020 Jan; 12(4):5106-5112. PubMed ID: 31898448 [TBL] [Abstract][Full Text] [Related]
12. Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide. Das T; Chen X; Jang H; Oh IK; Kim H; Ahn JH Small; 2016 Nov; 12(41):5720-5727. PubMed ID: 27608439 [TBL] [Abstract][Full Text] [Related]
13. Solution-processable 2D semiconductors for high-performance large-area electronics. Lin Z; Liu Y; Halim U; Ding M; Liu Y; Wang Y; Jia C; Chen P; Duan X; Wang C; Song F; Li M; Wan C; Huang Y; Duan X Nature; 2018 Oct; 562(7726):254-258. PubMed ID: 30283139 [TBL] [Abstract][Full Text] [Related]
14. Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment. Leong WS; Li Y; Luo X; Nai CT; Quek SY; Thong JT Nanoscale; 2015 Jun; 7(24):10823-31. PubMed ID: 26036230 [TBL] [Abstract][Full Text] [Related]
15. Scalable lateral heterojunction by chemical doping of 2D TMD thin films. Chamlagain B; Withanage SS; Johnston AC; Khondaker SI Sci Rep; 2020 Jul; 10(1):12970. PubMed ID: 32737425 [TBL] [Abstract][Full Text] [Related]
16. On MoS Im H; AlMutairi A; Kim S; Sritharan M; Kim S; Yoon Y ACS Sens; 2019 Nov; 4(11):2930-2936. PubMed ID: 31617702 [TBL] [Abstract][Full Text] [Related]
17. Multi-Valued Logic Circuits Based on Organic Anti-ambipolar Transistors. Kobashi K; Hayakawa R; Chikyow T; Wakayama Y Nano Lett; 2018 Jul; 18(7):4355-4359. PubMed ID: 29961329 [TBL] [Abstract][Full Text] [Related]
18. Wafer-Scale Integration of Highly Uniform and Scalable MoS Kim Y; Kim AR; Zhao G; Choi SY; Kang SC; Lim SK; Lee KE; Park J; Lee BH; Hahm MG; Kim DH; Yun J; Lee KH; Cho B ACS Appl Mater Interfaces; 2017 Oct; 9(42):37146-37153. PubMed ID: 28976735 [TBL] [Abstract][Full Text] [Related]
19. A MoS Hu SG; Liu Y; Li HK; Chen TP; Yu Q; Deng LJ Nanotechnology; 2017 May; 28(21):214001. PubMed ID: 28375138 [TBL] [Abstract][Full Text] [Related]
20. Large-Area MoS Nguyen DA; Park DY; Duong NT; Lee KN; Im H; Yang H; Jeong MS Small Methods; 2021 Nov; 5(11):e2100558. PubMed ID: 34927977 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]