189 related articles for article (PubMed ID: 34787101)
1. High polarization and wake-up free ferroelectric characteristics in ultrathin Hf
Yadav M; Kashir A; Oh S; Nikam RD; Kim H; Jang H; Hwang H
Nanotechnology; 2021 Dec; 33(8):. PubMed ID: 34787101
[TBL] [Abstract][Full Text] [Related]
2. Reduced fatigue and leakage of ferroelectric TiN/Hf
Hsain HA; Lee Y; Lancaster S; Lomenzo PD; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
Nanotechnology; 2023 Jan; 34(12):. PubMed ID: 36538824
[TBL] [Abstract][Full Text] [Related]
3. A new approach to achieving strong ferroelectric properties in TiN/Hf
Kim H; Kashir A; Oh S; Hwang H
Nanotechnology; 2021 Jan; 32(5):055703. PubMed ID: 33053526
[TBL] [Abstract][Full Text] [Related]
4. Effect of a ZrO
Song JN; Oh MJ; Yoon CB
Materials (Basel); 2023 Feb; 16(5):. PubMed ID: 36903074
[TBL] [Abstract][Full Text] [Related]
5. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf
Kim SJ; Mohan J; Kim HS; Hwang SM; Kim N; Jung YC; Sahota A; Kim K; Yu HY; Cha PR; Young CD; Choi R; Ahn J; Kim J
Materials (Basel); 2020 Jul; 13(13):. PubMed ID: 32630791
[TBL] [Abstract][Full Text] [Related]
6. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films.
Chen HY; Jiang YS; Chuang CH; Mo CL; Wang TY; Lin HC; Chen MJ
Nanotechnology; 2023 Dec; 35(10):. PubMed ID: 37995361
[TBL] [Abstract][Full Text] [Related]
7. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films.
Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477
[TBL] [Abstract][Full Text] [Related]
8. Improving the ferroelectric properties of Lu doped Hf
Xiao Y; Yang L; Jiang Y; Liu S; Li G; Ouyang J; Tang M
Nanotechnology; 2024 Jul; 35(38):. PubMed ID: 38925105
[TBL] [Abstract][Full Text] [Related]
9. Characteristics of Hf
Hong DH; Yoo JH; Park WJ; Kim SW; Kim JH; Uhm SH; Lee HC
Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903776
[TBL] [Abstract][Full Text] [Related]
10. Effects of high pressure oxygen annealing on Hf
Kim H; Kashir A; Oh S; Jang H; Hwang H
Nanotechnology; 2021 May; 32(31):. PubMed ID: 33903285
[TBL] [Abstract][Full Text] [Related]
11. Direct comparison of ferroelectric properties in Hf
Hur J; Tasneem N; Choe G; Wang P; Wang Z; Khan AI; Yu S
Nanotechnology; 2020 Dec; 31(50):505707. PubMed ID: 32663805
[TBL] [Abstract][Full Text] [Related]
12. Improved Ferroelectric Properties in Hf
Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M
Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036
[TBL] [Abstract][Full Text] [Related]
13. Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects.
Huang F; Saini B; Wan L; Lu H; He X; Qin S; Tsai W; Gruverman A; Meng AC; Wong HP; McIntyre PC; Wong S
ACS Nano; 2024 Jun; ():. PubMed ID: 38916257
[TBL] [Abstract][Full Text] [Related]
14. Effect of Process Temperature on Density and Electrical Characteristics of Hf
Kim HG; Hong DH; Yoo JH; Lee HC
Nanomaterials (Basel); 2022 Feb; 12(3):. PubMed ID: 35159892
[TBL] [Abstract][Full Text] [Related]
15. Enhanced Switching Reliability of Hf
Huang F; Saini B; Yu Z; Yoo C; Thampy V; He X; Baniecki JD; Tsai W; Meng AC; McIntyre PC; Wong S
ACS Appl Mater Interfaces; 2023 Nov; 15(43):50246-50253. PubMed ID: 37856882
[TBL] [Abstract][Full Text] [Related]
16. Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited
Kim HB; Jung M; Oh Y; Lee SW; Suh D; Ahn JH
Nanoscale; 2021 May; 13(18):8524-8530. PubMed ID: 33908540
[TBL] [Abstract][Full Text] [Related]
17. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf
Zhang F; Luo ZD; Yang Q; Zhou J; Wang J; Zhang Z; Fan Q; Peng Y; Wu Z; Liu F; Chen S; He D; Yin H; Han G; Liu Y; Hao Y
ACS Appl Mater Interfaces; 2022 Mar; 14(8):11028-11037. PubMed ID: 35133784
[TBL] [Abstract][Full Text] [Related]
18. Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing.
Joh H; Jung M; Hwang J; Goh Y; Jung T; Jeon S
ACS Appl Mater Interfaces; 2022 Jan; 14(1):1326-1333. PubMed ID: 34928573
[TBL] [Abstract][Full Text] [Related]
19. Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO
Zhang Y; Fan Z; Wang D; Wang J; Zou Z; Li Y; Li Q; Tao R; Chen D; Zeng M; Gao X; Dai J; Zhou G; Lu X; Liu JM
ACS Appl Mater Interfaces; 2020 Sep; 12(36):40510-40517. PubMed ID: 32805812
[TBL] [Abstract][Full Text] [Related]
20. A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf
Kim BS; Hyun SD; Moon T; Do Kim K; Lee YH; Park HW; Lee YB; Roh J; Kim BY; Kim HH; Park MH; Hwang CS
Nanoscale Res Lett; 2020 Apr; 15(1):72. PubMed ID: 32266598
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
