These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
197 related articles for article (PubMed ID: 34787101)
21. Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf Wang X; Wen Y; Wu M; Cui B; Wu YS; Li Y; Li X; Ye S; Ren P; Ji ZG; Lu HL; Wang R; Zhang DW; Huang R ACS Appl Mater Interfaces; 2023 Mar; 15(12):15657-15667. PubMed ID: 36926843 [TBL] [Abstract][Full Text] [Related]
22. Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf Toprasertpong K; Tahara K; Hikosaka Y; Nakamura K; Saito H; Takenaka M; Takagi S ACS Appl Mater Interfaces; 2022 Nov; 14(45):51137-51148. PubMed ID: 36319949 [TBL] [Abstract][Full Text] [Related]
23. Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO Koroleva AA; Chernikova AG; Zarubin SS; Korostylev E; Khakimov RR; Zhuk MY; Markeev AM ACS Omega; 2022 Dec; 7(50):47084-47095. PubMed ID: 36570284 [TBL] [Abstract][Full Text] [Related]
24. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si. Chernikova A; Kozodaev M; Markeev A; Negrov D; Spiridonov M; Zarubin S; Bak O; Buragohain P; Lu H; Suvorova E; Gruverman A; Zenkevich A ACS Appl Mater Interfaces; 2016 Mar; 8(11):7232-7. PubMed ID: 26931409 [TBL] [Abstract][Full Text] [Related]
25. Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf Chouprik A; Savelyeva E; Korostylev E; Kondratyuk E; Zarubin S; Sizykh N; Zhuk M; Zenkevich A; Markeev AM; Kondratev O; Yakunin S Nanomaterials (Basel); 2023 Dec; 13(23):. PubMed ID: 38063759 [TBL] [Abstract][Full Text] [Related]
26. Effect of ferroelectric and interface films on the tunneling electroresistance of the Al Shekhawat A; Hsain HA; Lee Y; Jones JL; Moghaddam S Nanotechnology; 2021 Sep; 32(48):. PubMed ID: 34407525 [TBL] [Abstract][Full Text] [Related]
27. Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures. Tasneem N; Kashyap H; Chae K; Park C; Lee PC; Lombardo SF; Afroze N; Tian M; Kumarasubramanian H; Hur J; Chen H; Chern W; Yu S; Bandaru P; Ravichandran J; Cho K; Kacher J; Kummel AC; Khan AI ACS Appl Mater Interfaces; 2022 Sep; 14(38):43897-43906. PubMed ID: 36121320 [TBL] [Abstract][Full Text] [Related]
29. Magnetoelectric Coupling at the Ni/Hf Dmitriyeva A; Mikheev V; Zarubin S; Chouprik A; Vinai G; Polewczyk V; Torelli P; Matveyev Y; Schlueter C; Karateev I; Yang Q; Chen Z; Tao L; Tsymbal EY; Zenkevich A ACS Nano; 2021 Sep; 15(9):14891-14902. PubMed ID: 34468129 [TBL] [Abstract][Full Text] [Related]
30. Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO Choi Y; Han C; Shin J; Moon S; Min J; Park H; Eom D; Lee J; Shin C Sensors (Basel); 2022 May; 22(11):. PubMed ID: 35684705 [TBL] [Abstract][Full Text] [Related]
31. Improved Ferroelectric Switching Endurance of La-Doped Hf Chernikova AG; Kozodaev MG; Negrov DV; Korostylev EV; Park MH; Schroeder U; Hwang CS; Markeev AM ACS Appl Mater Interfaces; 2018 Jan; 10(3):2701-2708. PubMed ID: 29282976 [TBL] [Abstract][Full Text] [Related]
32. Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode. Wu CH; Wang KC; Wang YY; Hu C; Su CJ; Wu TL Nanomaterials (Basel); 2022 Jan; 12(3):. PubMed ID: 35159813 [TBL] [Abstract][Full Text] [Related]
33. Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf Zou Z; Tian G; Wang D; Zhang Y; Wang J; Li Y; Tao R; Fan Z; Chen D; Zeng M; Gao X; Dai JY; Lu X; Liu JM Nanotechnology; 2021 May; 32(33):. PubMed ID: 33910189 [TBL] [Abstract][Full Text] [Related]
34. Quantification of Crystalline Phases in Hf Cervasio R; Amzallag E; Verseils M; Hemme P; Brubach JB; Infante IC; Segantini G; Rojo Romeo P; Coati A; Vlad A; Garreau Y; Resta A; Vilquin B; Creuze J; Roy P ACS Appl Mater Interfaces; 2024 Jan; 16(3):3829-3840. PubMed ID: 38214484 [TBL] [Abstract][Full Text] [Related]
35. On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes. Khakimov RR; Chernikova AG; Koroleva AA; Markeev AM Nanomaterials (Basel); 2022 Sep; 12(17):. PubMed ID: 36080096 [TBL] [Abstract][Full Text] [Related]
36. Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application. Zhang X; Chen L; Sun QQ; Wang LH; Zhou P; Lu HL; Wang PF; Ding SJ; Zhang DW Nanoscale Res Lett; 2015; 10():25. PubMed ID: 25852322 [TBL] [Abstract][Full Text] [Related]