These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
127 related articles for article (PubMed ID: 34809198)
1. Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes. Hou Y; Zhao D; Chen P; Liang F; Liu Z; Yang J Opt Express; 2021 Oct; 29(21):33992-34001. PubMed ID: 34809198 [TBL] [Abstract][Full Text] [Related]
2. Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide structure. Zhang Z; Yang J; Liang F; Chen P; Liu Z; Zhao D Opt Express; 2023 Feb; 31(5):7839-7849. PubMed ID: 36859907 [TBL] [Abstract][Full Text] [Related]
3. Improved performance of GaN-based blue laser diodes using asymmetric multiple quantum wells without the first quantum barrier layer. Liang F; Zhao D; Liu Z; Chen P; Yang J Opt Express; 2022 Mar; 30(6):9913-9923. PubMed ID: 35299404 [TBL] [Abstract][Full Text] [Related]
4. Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region. Yang J; Zhao DG; Jiang DS; Li X; Liang F; Chen P; Zhu JJ; Liu ZS; Liu ST; Zhang LQ; Li M Opt Express; 2017 May; 25(9):9595-9602. PubMed ID: 28468342 [TBL] [Abstract][Full Text] [Related]
5. Lower threshold current density of GaN-based blue laser diodes by suppressing the nonradiative recombination in a multiple quantum well. Liang F; Zhao D; Liu Z; Chen P; Yang J Opt Express; 2022 Aug; 30(17):31044-31057. PubMed ID: 36242196 [TBL] [Abstract][Full Text] [Related]
6. Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers. Chen Z; Liang F; Zhao D; Yang J; Chen P; Jiang D Nanomaterials (Basel); 2022 Jul; 12(15):. PubMed ID: 35957010 [TBL] [Abstract][Full Text] [Related]
7. Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells. Yang J; Huang YJ; Liu ZS; Zhang YH; Liang F; Zhao DG Opt Lett; 2024 Mar; 49(5):1305-1308. PubMed ID: 38426999 [TBL] [Abstract][Full Text] [Related]
8. Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering. Zhang ZH; Ju Z; Liu W; Tan ST; Ji Y; Kyaw Z; Zhang X; Hasanov N; Sun XW; Demir HV Opt Lett; 2014 Apr; 39(8):2483-6. PubMed ID: 24979024 [TBL] [Abstract][Full Text] [Related]
9. Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier. Zhang Z; Yang J; Zhao D; Liang F; Chen P; Liu Z Nanomaterials (Basel); 2022 Nov; 12(22):. PubMed ID: 36432275 [TBL] [Abstract][Full Text] [Related]
10. Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes. Bharadwaj S; Miller J; Lee K; Lederman J; Siekacz M; Xing HG; Jena D; Skierbiszewski C; Turski H Opt Express; 2020 Feb; 28(4):4489-4500. PubMed ID: 32121684 [TBL] [Abstract][Full Text] [Related]
11. Advantages of InGaN-GaN-InGaN Delta Barriers for InGaN-Based Laser Diodes. Cheng L; Li Z; Zhang J; Lin X; Yang D; Chen H; Wu S; Yao S Nanomaterials (Basel); 2021 Aug; 11(8):. PubMed ID: 34443901 [TBL] [Abstract][Full Text] [Related]
12. Step-type quantum wells with slightly varied InN composition for GaN-based yellow micro light-emitting diodes. Shao H; Chu C; Chuang CM; Hang S; Che J; Kou J; Tian K; Zhang Y; Zheng Q; Zhang ZH; Li Q; Kuo HC Appl Opt; 2021 Apr; 60(11):3006-3012. PubMed ID: 33983194 [TBL] [Abstract][Full Text] [Related]
13. A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing. Feng MX; Sun Q; Liu JP; Li ZC; Zhou Y; Zhang SM; Yang H Materials (Basel); 2017 Apr; 10(5):. PubMed ID: 28772842 [TBL] [Abstract][Full Text] [Related]
14. Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes. Gao M; Yang J; Jia W; Zhao D; Zhai G; Dong H; Xu B Nanomaterials (Basel); 2024 Apr; 14(7):. PubMed ID: 38607183 [TBL] [Abstract][Full Text] [Related]
15. [Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes]. Chen WH; Liao H; Hu XD; Li R; Jia QJ; Jin YH; Du WM; Yang ZJ; Zhang GY Guang Pu Xue Yu Guang Pu Fen Xi; 2009 Jun; 29(6):1441-4. PubMed ID: 19810504 [TBL] [Abstract][Full Text] [Related]
16. Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer. Xing Z; Wang F; Wang Y; Liou JJ; Liu Y Opt Express; 2022 Sep; 30(20):36446-36455. PubMed ID: 36258572 [TBL] [Abstract][Full Text] [Related]
18. Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates. Khoury M; Li H; Zhang H; Bonef B; Wong MS; Wu F; Cohen D; De Mierry P; Vennéguès P; Speck JS; Nakamura S; DenBaars SP ACS Appl Mater Interfaces; 2019 Dec; 11(50):47106-47111. PubMed ID: 31769651 [TBL] [Abstract][Full Text] [Related]
19. Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes. Yang J; Zhao DG; Liu ZS; Wang B; Zhang YH; Zhang ZZ; Chen P; Liang F Opt Lett; 2022 Apr; 47(7):1666-1668. PubMed ID: 35363704 [TBL] [Abstract][Full Text] [Related]
20. Differential resistance of GaN-based laser diodes with and without polarization effect. Li X; Liu ZS; Zhao DG; Jiang DS; Chen P; Zhu JJ; Yang J; Le LC; Liu W; He XG; Li XJ; Liang F; Zhang LQ; Liu JQ; Yang H Appl Opt; 2015 Oct; 54(29):8706-11. PubMed ID: 26479807 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]