141 related articles for article (PubMed ID: 34825645)
21. Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein.
Park KY; Kim MS; Choi SY
Biosens Bioelectron; 2005 Apr; 20(10):2111-5. PubMed ID: 15741082
[TBL] [Abstract][Full Text] [Related]
22. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.
Chen SH; Liao WS; Yang HC; Wang SJ; Liaw YG; Wang H; Gu H; Wang MC
Nanoscale Res Lett; 2012 Aug; 7(1):431. PubMed ID: 22853458
[TBL] [Abstract][Full Text] [Related]
23. Performance trade-offs in single-photon avalanche diode miniaturization.
Finkelstein H; Hsu MJ; Zlatanovic S; Esener S
Rev Sci Instrum; 2007 Oct; 78(10):103103. PubMed ID: 17979402
[TBL] [Abstract][Full Text] [Related]
24. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.
Lee YJ; Yang ZP; Chen PG; Hsieh YA; Yao YC; Liao MH; Lee MH; Wang MT; Hwang JM
Opt Express; 2014 Oct; 22 Suppl 6():A1589-95. PubMed ID: 25607316
[TBL] [Abstract][Full Text] [Related]
25. Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass.
Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R
Sci Rep; 2016 Aug; 6():31501. PubMed ID: 27538849
[TBL] [Abstract][Full Text] [Related]
26. A Review of Reliability in Gate-All-Around Nanosheet Devices.
Wang M
Micromachines (Basel); 2024 Feb; 15(2):. PubMed ID: 38398997
[TBL] [Abstract][Full Text] [Related]
27. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics.
Na J; Cheon J; Kim K
Materials (Basel); 2021 Jun; 14(13):. PubMed ID: 34202093
[TBL] [Abstract][Full Text] [Related]
28. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around.
Guerfi Y; Larrieu G
Nanoscale Res Lett; 2016 Dec; 11(1):210. PubMed ID: 27094824
[TBL] [Abstract][Full Text] [Related]
29. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials.
Zhou L; Mao J; Ren Y; Han ST; Roy VAL; Zhou Y
Small; 2018 Mar; 14(10):. PubMed ID: 29377568
[TBL] [Abstract][Full Text] [Related]
30. In vivo verification of superficial dose for head and neck treatments using intensity-modulated techniques.
Qi ZY; Deng XW; Huang SM; Zhang L; He ZC; Li XA; Kwan I; Lerch M; Cutajar D; Metcalfe P; Rosenfeld A
Med Phys; 2009 Jan; 36(1):59-70. PubMed ID: 19235374
[TBL] [Abstract][Full Text] [Related]
31. Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin".
Alshaikh S; Carolan M; Petasecca M; Lerch M; Metcalfe P; Rosenfeld A
Australas Phys Eng Sci Med; 2014 Jun; 37(2):311-9. PubMed ID: 24648245
[TBL] [Abstract][Full Text] [Related]
32. Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout.
Lee MS; Lee HC
Int Sch Res Notices; 2014; 2014():145759. PubMed ID: 27350975
[TBL] [Abstract][Full Text] [Related]
33. The Moore's Law of microbiology - towards bacterial culture miniaturization with the micro-Petri chip.
Gefen O; Balaban NQ
Trends Biotechnol; 2008 Jul; 26(7):345-7. PubMed ID: 18453020
[TBL] [Abstract][Full Text] [Related]
34. Proton dose distribution measurements using a MOSFET detector with a simple dose-weighted correction method for LET effects.
Kohno R; Hotta K; Matsuura T; Matsubara K; Nishioka S; Nishio T; Kawashima M; Ogino T
J Appl Clin Med Phys; 2011 Apr; 12(2):3431. PubMed ID: 21587191
[TBL] [Abstract][Full Text] [Related]
35. In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity.
Kohno R; Hotta K; Matsubara K; Nishioka S; Matsuura T; Kawashima M
J Appl Clin Med Phys; 2012 Mar; 13(2):3699. PubMed ID: 22402385
[TBL] [Abstract][Full Text] [Related]
36. 3D modeling of dual-gate FinFET.
Mil'shtein S; Devarakonda L; Zanchi B; Palma J
Nanoscale Res Lett; 2012 Nov; 7(1):625. PubMed ID: 23148493
[TBL] [Abstract][Full Text] [Related]
37. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor.
Yoon C; Moon S; Shin C
Nano Converg; 2020 Jun; 7(1):19. PubMed ID: 32483648
[TBL] [Abstract][Full Text] [Related]
38. Direct protein detection with a nano-interdigitated array gate MOSFET.
Tang X; Jonas AM; Nysten B; Demoustier-Champagne S; Blondeau F; Prévot PP; Pampin R; Godfroid E; Iñiguez B; Colinge JP; Raskin JP; Flandre D; Bayot V
Biosens Bioelectron; 2009 Aug; 24(12):3531-7. PubMed ID: 19501500
[TBL] [Abstract][Full Text] [Related]
39. Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.
Wei Z; Fu H; Yan X; Li S; Zhang L; Wei J; Liu S; Sun W; Wu W; Bai S
Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057175
[TBL] [Abstract][Full Text] [Related]
40. Gate Quantum Capacitance Effects in Nanoscale Transistors.
Desai SB; Fahad HM; Lundberg T; Pitner G; Kim H; Chrzan D; Wong HP; Javey A
Nano Lett; 2019 Oct; 19(10):7130-7137. PubMed ID: 31532995
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
