209 related articles for article (PubMed ID: 34832130)
1. Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric.
Liu Y; Liu C; Qin H; Peng C; Lu M; Chen Z; Zhao Y
Membranes (Basel); 2021 Nov; 11(11):. PubMed ID: 34832130
[TBL] [Abstract][Full Text] [Related]
2. One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature.
Wang C; Li Y; Jin Y; Guo G; Song Y; Huang H; He H; Wang A
Nanomaterials (Basel); 2022 Oct; 12(19):. PubMed ID: 36234608
[TBL] [Abstract][Full Text] [Related]
3. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
[TBL] [Abstract][Full Text] [Related]
4. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
[TBL] [Abstract][Full Text] [Related]
5. Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.
Chang SP; Shan D
J Nanosci Nanotechnol; 2018 Apr; 18(4):2493-2497. PubMed ID: 29442918
[TBL] [Abstract][Full Text] [Related]
6. Suppression of degradation induced by negative gate bias and illumination stress in amorphous InGaZnO thin-film transistors by applying negative drain bias.
Wang D; Hung MP; Jiang J; Toda T; Furuta M
ACS Appl Mater Interfaces; 2014 Apr; 6(8):5713-8. PubMed ID: 24689829
[TBL] [Abstract][Full Text] [Related]
7. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.
Kim YJ; Yang BS; Oh S; Han SJ; Lee HW; Heo J; Jeong JK; Kim HJ
ACS Appl Mater Interfaces; 2013 Apr; 5(8):3255-61. PubMed ID: 23540523
[TBL] [Abstract][Full Text] [Related]
8. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
Zhang Y; Xie H; Dong C
Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
[TBL] [Abstract][Full Text] [Related]
9. Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability.
Han KL; Han JH; Kim BS; Jeong HJ; Choi JM; Hwang JE; Oh S; Park JS
ACS Appl Mater Interfaces; 2020 Jan; 12(3):3784-3791. PubMed ID: 31878779
[TBL] [Abstract][Full Text] [Related]
10. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
[TBL] [Abstract][Full Text] [Related]
11. High-Performance Indium Gallium Tin Oxide Transistors with an Al
Choi CH; Kim T; Ueda S; Shiah YS; Hosono H; Kim J; Jeong JK
ACS Appl Mater Interfaces; 2021 Jun; 13(24):28451-28461. PubMed ID: 34111928
[TBL] [Abstract][Full Text] [Related]
12. Influence of metallization process on solution-processed InGaZnO thin film transistors.
Kim B; Lee H; Hong S; Kim HJ; Kim K; Kang H
Nanotechnology; 2021 Jul; 32(40):. PubMed ID: 34171856
[TBL] [Abstract][Full Text] [Related]
13. Remarkable Stability Improvement of ZnO TFT with Al
Saha JK; Bukke RN; Mude NN; Jang J
Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32438551
[TBL] [Abstract][Full Text] [Related]
14. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.
Lee IK; Lee KH; Lee S; Cho WJ
ACS Appl Mater Interfaces; 2014 Dec; 6(24):22680-6. PubMed ID: 25456792
[TBL] [Abstract][Full Text] [Related]
15. Role of
Prasad OK; Mohanty SK; Wu CH; Yu TY; Chang KM
Nanotechnology; 2021 Jul; 32(39):. PubMed ID: 34144544
[TBL] [Abstract][Full Text] [Related]
16. Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing.
Cheng CH; Chou KI; Hsu HH
J Nanosci Nanotechnol; 2015 Feb; 15(2):1486-9. PubMed ID: 26353677
[TBL] [Abstract][Full Text] [Related]
17. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al
Shao Y; Wu X; Zhang MN; Liu WJ; Ding SJ
Nanoscale Res Lett; 2019 Apr; 14(1):122. PubMed ID: 30941527
[TBL] [Abstract][Full Text] [Related]
18. As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability.
Bae J; Ali A; Islam MM; Jeong M; Park C; Jang J
ACS Appl Mater Interfaces; 2023 Aug; 15(33):39494-39504. PubMed ID: 37561400
[TBL] [Abstract][Full Text] [Related]
19. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.
Chen FH; Her JL; Shao YH; Matsuda YH; Pan TM
Nanoscale Res Lett; 2013 Jan; 8(1):18. PubMed ID: 23294730
[TBL] [Abstract][Full Text] [Related]
20. Effect of Fluorine Diffusion on Amorphous-InGaZnO-Based Thin-Film Transistors.
Jiang J; Furuta M
J Nanosci Nanotechnol; 2018 Aug; 18(8):5668-5673. PubMed ID: 29458623
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
