These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

150 related articles for article (PubMed ID: 34835724)

  • 1. Effect of Point Defects on Electronic Structure of Monolayer GeS.
    Choi HK; Cha J; Choi CG; Kim J; Hong S
    Nanomaterials (Basel); 2021 Nov; 11(11):. PubMed ID: 34835724
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electronic and magnetic properties of GeS monolayer effected by point defects and doping.
    Bui PT; Van On V; Guerrero-Sanchez J; Hoat DM
    RSC Adv; 2024 Jan; 14(4):2481-2490. PubMed ID: 38223692
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Defect evolution behaviors from single sulfur point vacancies to line vacancies in monolayer molybdenum disulfide.
    Gao C; Yang X; Jiang M; Chen L; Chen Z; Singh CV
    Phys Chem Chem Phys; 2021 Sep; 23(35):19525-19536. PubMed ID: 34524293
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms.
    Hoat DM; Ponce-Pérez R; Ha CV; Guerrero-Sanchez J
    Nanoscale Adv; 2024 Jul; 6(14):3602-3611. PubMed ID: 38989525
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides.
    Barja S; Refaely-Abramson S; Schuler B; Qiu DY; Pulkin A; Wickenburg S; Ryu H; Ugeda MM; Kastl C; Chen C; Hwang C; Schwartzberg A; Aloni S; Mo SK; Frank Ogletree D; Crommie MF; Yazyev OV; Louie SG; Neaton JB; Weber-Bargioni A
    Nat Commun; 2019 Jul; 10(1):3382. PubMed ID: 31358753
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Investigation of vacancy defects and substitutional doping in AlSb monolayer with double layer honeycomb structure: a first-principles calculation.
    Bafekry A; Faraji M; Karbasizadeh S; Jappor HR; Sarsari IA; Ghergherehchi M; Gogova D
    J Phys Condens Matter; 2021 Nov; 34(6):. PubMed ID: 34731833
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy.
    Kim DH; Kim HS; Song MW; Lee S; Lee SY
    Nano Converg; 2017; 4(1):13. PubMed ID: 28616375
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of substitutional and vacancy defects on the electrical and mechanical properties of 2D-hexagonal boron nitride.
    Sagar TC; Chinthapenta V
    J Mol Model; 2020 Jul; 26(8):192. PubMed ID: 32620980
    [TBL] [Abstract][Full Text] [Related]  

  • 9. How Substitutional Point Defects in Two-Dimensional WS
    Schuler B; Lee JH; Kastl C; Cochrane KA; Chen CT; Refaely-Abramson S; Yuan S; van Veen E; Roldán R; Borys NJ; Koch RJ; Aloni S; Schwartzberg AM; Ogletree DF; Neaton JB; Weber-Bargioni A
    ACS Nano; 2019 Sep; 13(9):10520-10534. PubMed ID: 31393700
    [TBL] [Abstract][Full Text] [Related]  

  • 10. First-principles computational exploration of ferromagnetism in monolayer GaS via substitutional doping.
    Khan R; Rahman AU; Zhang Q; Kratzer P; Ramay SM
    J Phys Condens Matter; 2021 Jun; 33(31):. PubMed ID: 34034249
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Adsorption of small inorganic molecules on a defective MoS
    González C; Biel B; Dappe YJ
    Phys Chem Chem Phys; 2017 Apr; 19(14):9485-9499. PubMed ID: 28338139
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Theoretical studies of defect states in GaTe.
    Rak Z; Mahanti SD; Mandal KC; Fernelius NC
    J Phys Condens Matter; 2009 Jan; 21(1):015504. PubMed ID: 21817225
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Nitrogen/gold codoping of the TiO2(101) anatase surface. A theoretical study based on DFT calculations.
    Ortega Y; Hernández NC; Menéndez-Proupin E; Graciani J; Sanz JF
    Phys Chem Chem Phys; 2011 Jun; 13(23):11340-50. PubMed ID: 21566817
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Effect of vacancies on the structural and electronic properties of Ti
    Xiao-Hong L; Xiang-Ying S; Rui-Zhou Z
    RSC Adv; 2019 Aug; 9(47):27646-27651. PubMed ID: 35529181
    [TBL] [Abstract][Full Text] [Related]  

  • 15. The quantum confinement effects on the electronic properties of monolayer GeS nanoribbon with tube-edged reconstruction.
    Kong W; Zhang Y; Jiang X; Su Y; Liu H; Gao J
    Nanotechnology; 2022 May; ():. PubMed ID: 35584618
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Functionalization of electronic, spin and optical properties of GeSe monolayer by substitutional doping: a first-principles study.
    Chakraborty R; Ahmed S; Subrina S
    Nanotechnology; 2021 May; 32(30):. PubMed ID: 33845470
    [TBL] [Abstract][Full Text] [Related]  

  • 17. The effects of substitutional doping on Cu vacancy formation in Cu
    Beronio ERA; Colambo IR; Padama AAB
    Phys Chem Chem Phys; 2021 Apr; 23(14):8800-8808. PubMed ID: 33876039
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Defect-Mediated Alloying of Monolayer Transition-Metal Dichalcogenides.
    Taghinejad H; Rehn DA; Muccianti C; Eftekhar AA; Tian M; Fan T; Zhang X; Meng Y; Chen Y; Nguyen TV; Shi SF; Ajayan PM; Schaibley J; Reed EJ; Adibi A
    ACS Nano; 2018 Dec; 12(12):12795-12804. PubMed ID: 30433762
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Chemical and substitutional doping, and anti-site and vacancy formation in monolayer AlN and GaN.
    Kadioglu Y; Ersan F; Kecik D; Aktürk OÜ; Aktürk E; Ciraci S
    Phys Chem Chem Phys; 2018 Jun; 20(23):16077-16091. PubMed ID: 29855032
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Enhanced piezoelectricity of monolayer phosphorene oxides: a theoretical study.
    Yin H; Zheng GP; Gao J; Wang Y; Ma Y
    Phys Chem Chem Phys; 2017 Oct; 19(40):27508-27515. PubMed ID: 28975948
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.