These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

114 related articles for article (PubMed ID: 34857865)

  • 1. Author Correction: A quantitative approach for trap analysis between Al
    Amir W; Shin JW; Shin KY; Kim JM; Cho CY; Park KH; Hoshi T; Tsutsumi T; Sugiyama H; Matsuzaki H; Kim TW
    Sci Rep; 2021 Dec; 11(1):23667. PubMed ID: 34857865
    [No Abstract]   [Full Text] [Related]  

  • 2. A quantitative approach for trap analysis between Al
    Amir W; Shin JW; Shin KY; Kim JM; Cho CY; Park KH; Hoshi T; Tsutsumi T; Sugiyama H; Matsuzaki H; Kim TW
    Sci Rep; 2021 Nov; 11(1):22401. PubMed ID: 34789786
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.
    Sharma N; Periasamy C; Chaturvedi N
    J Nanosci Nanotechnol; 2018 Jul; 18(7):4580-4587. PubMed ID: 29442634
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Impact of Charge-Trapping Effects on Reliability Instability in Al
    Amir W; Chakraborty S; Kwon HM; Kim TW
    Materials (Basel); 2023 Jun; 16(12):. PubMed ID: 37374651
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Low-Power pH Sensor Based on Narrow Channel Open-Gated Al
    Yang X; Ao J; Wu S; Ma S; Li X; Hu L; Liu W; Han C
    Materials (Basel); 2020 Nov; 13(22):. PubMed ID: 33266399
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al
    Lu F; Tang N; Shang L; Guan H; Xu F; Ge W; Shen B
    Sci Rep; 2017 Feb; 7():42974. PubMed ID: 28225042
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.
    Zhang K; Liang H; Liu Y; Shen R; Guo W; Wang D; Xia X; Tao P; Yang C; Luo Y; Du G
    Sci Rep; 2014 Sep; 4():6322. PubMed ID: 25205042
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Enhanced anisotropic effective g factors of an Al0.25Ga0.75N/GaN heterostructure based quantum point contact.
    Lu F; Tang N; Huang S; Larsson M; Maximov I; Graczyk M; Duan J; Liu S; Ge W; Xu F; Shen B
    Nano Lett; 2013 Oct; 13(10):4654-8. PubMed ID: 24041238
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.
    Yang WQ; Dai L; You LP; Zhang BR; Shen B; Qin GG
    J Nanosci Nanotechnol; 2006 Dec; 6(12):3780-3. PubMed ID: 17256330
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers.
    Jung JH; Yoon YJ; Cho MS; Kim BG; Jang WD; Kang IM
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6008-6015. PubMed ID: 31026900
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Quantitative analysis of backscattered electron (BSE) contrast using low voltage scanning electron microscopy (LVSEM) and its application to Al
    Garitagoitia Cid A; Rosenkranz R; Löffler M; Clausner A; Standke Y; Zschech E
    Ultramicroscopy; 2018 Dec; 195():47-52. PubMed ID: 30179774
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array.
    Lee HY; Liu DS; Chyi JI; Chang EY; Lee CT
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34639872
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Dissociation of GaN
    Zanuttini D; Blum I; di Russo E; Rigutti L; Vurpillot F; Douady J; Jacquet E; Anglade PM; Gervais B
    J Chem Phys; 2018 Oct; 149(13):134311. PubMed ID: 30292204
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.
    Tanaka A; Sugiura R; Kawaguchi D; Wani Y; Watanabe H; Sena H; Ando Y; Honda Y; Igasaki Y; Wakejima A; Ando Y; Amano H
    Sci Rep; 2022 May; 12(1):8175. PubMed ID: 35581329
    [No Abstract]   [Full Text] [Related]  

  • 15. Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array.
    Lee HY; Ju YH; Chyi JI; Lee CT
    Materials (Basel); 2021 Dec; 15(1):. PubMed ID: 35009193
    [TBL] [Abstract][Full Text] [Related]  

  • 16. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.
    Wojtasiak W; Góralczyk M; Gryglewski D; Zając M; Kucharski R; Prystawko P; Piotrowska A; Ekielski M; Kamińska E; Taube A; Wzorek M
    Micromachines (Basel); 2018 Oct; 9(11):. PubMed ID: 30715045
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics.
    Dub M; Sai P; Sakowicz M; Janicki L; But DB; Prystawko P; Cywiński G; Knap W; Rumyantsev S
    Micromachines (Basel); 2021 Jun; 12(6):. PubMed ID: 34205287
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Current characteristics of the double-barrier Al0.25Ga0.75As/Al0.45Ga0.55As/GaAs single-quantum-well structures.
    Osotchan T; Chin VW; Tansley TL
    Phys Rev B Condens Matter; 1995 Aug; 52(7):5202-5209. PubMed ID: 9981705
    [No Abstract]   [Full Text] [Related]  

  • 19. Correction: An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors.
    Wang J; Gu Z; Liu X; Zhao L; Peng H; Li J
    Analyst; 2021 Jun; 146(13):4400. PubMed ID: 34085671
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells.
    Tu SJ; Sheu JK; Lee ML; Yang CC; Chang KH; Yeh YH; Huang FW; Lai WC
    Opt Express; 2011 Jun; 19(13):12719-26. PubMed ID: 21716514
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.