153 related articles for article (PubMed ID: 34947133)
1. Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO
Dastgeer G; Afzal AM; Aziz J; Hussain S; Jaffery SHA; Kim DK; Imran M; Assiri MA
Materials (Basel); 2021 Dec; 14(24):. PubMed ID: 34947133
[TBL] [Abstract][Full Text] [Related]
2. Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS).
Hmar JJL
RSC Adv; 2018 May; 8(36):20423-20433. PubMed ID: 35541659
[TBL] [Abstract][Full Text] [Related]
3. Multi-Level Resistive Switching in SnSe/SrTiO
Ho TL; Ding K; Lyapunov N; Suen CH; Wong LW; Zhao J; Yang M; Zhou X; Dai JY
Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35807964
[TBL] [Abstract][Full Text] [Related]
4. Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films.
Jaafar AH; Meng L; Zhang T; Guo D; Newbrook D; Zhang W; Reid G; de Groot CH; Bartlett PN; Huang R
ACS Appl Nano Mater; 2022 Dec; 5(12):17711-17720. PubMed ID: 36583121
[TBL] [Abstract][Full Text] [Related]
5. A study on the resistance switching of Ag
Lee TS; Lee NJ; Abbas H; Hu Q; Yoon TS; Lee HH; Le Shim E; Kang CJ
Nanotechnology; 2018 Jan; 29(3):035202. PubMed ID: 29251266
[TBL] [Abstract][Full Text] [Related]
6. S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device.
Moudgil A; Kalyani N; Sinsinbar G; Das S; Mishra P
ACS Appl Mater Interfaces; 2018 Feb; 10(5):4866-4873. PubMed ID: 29308639
[TBL] [Abstract][Full Text] [Related]
7. A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments.
Liu Y; Ye C; Chang KC; Li L; Jiang B; Xia C; Liu L; Zhang X; Liu X; Xia T; Peng Z; Cao G; Cheng G; Ke S; Wang J
Small; 2020 Nov; 16(46):e2004619. PubMed ID: 33053256
[TBL] [Abstract][Full Text] [Related]
8. Compliance current controlled volatile and nonvolatile memory in Ag/CoFe
Munjal S; Khare N
Nanotechnology; 2021 Apr; 32(18):185204. PubMed ID: 33470980
[TBL] [Abstract][Full Text] [Related]
9. Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb
Paul T; Sarkar PK; Maiti S; Sahoo A; Chattopadhyay KK
Dalton Trans; 2022 Mar; 51(10):3864-3874. PubMed ID: 35171172
[TBL] [Abstract][Full Text] [Related]
10. Solution-Processed Flexible Biomemristor Based on Gold-Decorated Chitosan.
Raeis-Hosseini N; Rho J
ACS Appl Mater Interfaces; 2021 Feb; 13(4):5445-5450. PubMed ID: 33476514
[TBL] [Abstract][Full Text] [Related]
11. Bipolar resistive switching in HoCrO
Sahu DP; Jammalamadaka SN
Nanotechnology; 2020 Aug; 31(35):355202. PubMed ID: 32408284
[TBL] [Abstract][Full Text] [Related]
12. Vertical MoS
Xu R; Jang H; Lee MH; Amanov D; Cho Y; Kim H; Park S; Shin HJ; Ham D
Nano Lett; 2019 Apr; 19(4):2411-2417. PubMed ID: 30896171
[TBL] [Abstract][Full Text] [Related]
13. Sprayed FeWO
Patil AR; Dongale TD; Namade LD; Mohite SV; Kim Y; Sutar SS; Kamat RK; Rajpure KY
J Colloid Interface Sci; 2023 Jul; 642():540-553. PubMed ID: 37028161
[TBL] [Abstract][Full Text] [Related]
14. Graphene-Boron Nitride-Graphene Cross-Point Memristors with Three Stable Resistive States.
Zhu K; Liang X; Yuan B; Villena MA; Wen C; Wang T; Chen S; Hui F; Shi Y; Lanza M
ACS Appl Mater Interfaces; 2019 Oct; 11(41):37999-38005. PubMed ID: 31529969
[TBL] [Abstract][Full Text] [Related]
15. Flexible Polymer Device Based on Parylene-C with Memory and Temperature Sensing Functionalities.
Lin M; Chen Q; Wang Z; Fang Y; Liu J; Yang Y; Wang W; Cai Y; Huang R
Polymers (Basel); 2017 Jul; 9(8):. PubMed ID: 30970987
[TBL] [Abstract][Full Text] [Related]
16. Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
Li Y; Long S; Liu Q; Lv H; Liu M
Small; 2017 Sep; 13(35):. PubMed ID: 28417548
[TBL] [Abstract][Full Text] [Related]
17. Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices.
Liu T; Wu W; Liao KN; Sun Q; Gong X; Roy VAL; Yu ZZ; Li RKY
Carbohydr Polym; 2019 Jun; 214():213-220. PubMed ID: 30925991
[TBL] [Abstract][Full Text] [Related]
18. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode.
Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB
J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090
[TBL] [Abstract][Full Text] [Related]
19. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.
Simanjuntak FM; Panda D; Wei KH; Tseng TY
Nanoscale Res Lett; 2016 Dec; 11(1):368. PubMed ID: 27541816
[TBL] [Abstract][Full Text] [Related]
20. Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.
Qian K; Cai G; Nguyen VC; Chen T; Lee PS
ACS Appl Mater Interfaces; 2016 Oct; 8(41):27885-27891. PubMed ID: 27704752
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]