These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
232 related articles for article (PubMed ID: 34958206)
21. Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf Chouprik A; Kirtaev R; Korostylev E; Mikheev V; Spiridonov M; Negrov D Nanomaterials (Basel); 2022 Apr; 12(9):. PubMed ID: 35564195 [TBL] [Abstract][Full Text] [Related]
22. A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf Kim BS; Hyun SD; Moon T; Do Kim K; Lee YH; Park HW; Lee YB; Roh J; Kim BY; Kim HH; Park MH; Hwang CS Nanoscale Res Lett; 2020 Apr; 15(1):72. PubMed ID: 32266598 [TBL] [Abstract][Full Text] [Related]
23. High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing. Wang Z; Guan Z; Sun H; Luo Z; Zhao H; Wang H; Yin Y; Li X ACS Appl Mater Interfaces; 2022 Jun; 14(21):24602-24609. PubMed ID: 35604049 [TBL] [Abstract][Full Text] [Related]
28. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement. Kim HJ; Park MH; Kim YJ; Lee YH; Moon T; Kim KD; Hyun SD; Hwang CS Nanoscale; 2016 Jan; 8(3):1383-9. PubMed ID: 26511062 [TBL] [Abstract][Full Text] [Related]
29. Sub-nanosecond memristor based on ferroelectric tunnel junction. Ma C; Luo Z; Huang W; Zhao L; Chen Q; Lin Y; Liu X; Chen Z; Liu C; Sun H; Jin X; Yin Y; Li X Nat Commun; 2020 Mar; 11(1):1439. PubMed ID: 32188861 [TBL] [Abstract][Full Text] [Related]
30. Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf Hyun SD; Park HW; Kim YJ; Park MH; Lee YH; Kim HJ; Kwon YJ; Moon T; Kim KD; Lee YB; Kim BS; Hwang CS ACS Appl Mater Interfaces; 2018 Oct; 10(41):35374-35384. PubMed ID: 30247016 [TBL] [Abstract][Full Text] [Related]
31. Superhigh energy storage density on-chip capacitors with ferroelectric Hf He Y; Zheng G; Wu X; Liu WJ; Zhang DW; Ding SJ Nanoscale Adv; 2022 Oct; 4(21):4648-4657. PubMed ID: 36341289 [TBL] [Abstract][Full Text] [Related]
32. Atomic Layer Deposited Hf Wang TY; Meng JL; He ZY; Chen L; Zhu H; Sun QQ; Ding SJ; Zhang DW Nanoscale Res Lett; 2019 Mar; 14(1):102. PubMed ID: 30877593 [TBL] [Abstract][Full Text] [Related]
34. Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf Wang Y; Liu S; Luo Z; Gan H; Wang H; Li J; Du X; Zhao H; Shen S; Yin Y; Li X ACS Appl Mater Interfaces; 2023 Sep; 15(36):42764-42773. PubMed ID: 37655492 [TBL] [Abstract][Full Text] [Related]
35. Improved polarization and endurance in ferroelectric Hf Song T; Tan H; Estandía S; Gàzquez J; Gich M; Dix N; Fina I; Sánchez F Nanoscale; 2022 Feb; 14(6):2337-2343. PubMed ID: 35088065 [TBL] [Abstract][Full Text] [Related]
36. Enhanced Switching Reliability of Hf Huang F; Saini B; Yu Z; Yoo C; Thampy V; He X; Baniecki JD; Tsai W; Meng AC; McIntyre PC; Wong S ACS Appl Mater Interfaces; 2023 Nov; 15(43):50246-50253. PubMed ID: 37856882 [TBL] [Abstract][Full Text] [Related]
37. Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf Lu H; Kim DJ; Aramberri H; Holzer M; Buragohain P; Dutta S; Schroeder U; Deshpande V; Íñiguez J; Gruverman A; Dubourdieu C Nat Commun; 2024 Jan; 15(1):860. PubMed ID: 38287021 [TBL] [Abstract][Full Text] [Related]
38. Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf Chouprik A; Savelyeva E; Korostylev E; Kondratyuk E; Zarubin S; Sizykh N; Zhuk M; Zenkevich A; Markeev AM; Kondratev O; Yakunin S Nanomaterials (Basel); 2023 Dec; 13(23):. PubMed ID: 38063759 [TBL] [Abstract][Full Text] [Related]
39. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf Kim SJ; Mohan J; Kim HS; Hwang SM; Kim N; Jung YC; Sahota A; Kim K; Yu HY; Cha PR; Young CD; Choi R; Ahn J; Kim J Materials (Basel); 2020 Jul; 13(13):. PubMed ID: 32630791 [TBL] [Abstract][Full Text] [Related]