These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

142 related articles for article (PubMed ID: 34985416)

  • 1. Defect control and Si/Ge core-shell heterojunction formation on silicon nanowire surfaces formed using the top-down method.
    Fukata N; Jevasuwan W; Sun YL; Sugimoto Y
    Nanotechnology; 2022 Jan; 33(13):. PubMed ID: 34985416
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Controlling Catalyst-Free Formation and Hole Gas Accumulation by Fabricating Si/Ge Core-Shell and Si/Ge/Si Core-Double Shell Nanowires.
    Zhang X; Jevasuwan W; Sugimoto Y; Fukata N
    ACS Nano; 2019 Nov; 13(11):13403-13412. PubMed ID: 31626528
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Hole gas accumulation in Si/Ge core-shell and Si/Ge/Si core-double shell nanowires.
    Zhang X; Jevasuwan W; Pradel KC; Subramani T; Takei T; Fukata N
    Nanoscale; 2018 Dec; 10(45):21062-21068. PubMed ID: 30187068
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core-Shell Nanowires.
    Fukata N; Yu M; Jevasuwan W; Takei T; Bando Y; Wu W; Wang ZL
    ACS Nano; 2015 Dec; 9(12):12182-8. PubMed ID: 26554299
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Characterization of impurity doping and stress in Si/Ge and Ge/Si core-shell nanowires.
    Fukata N; Mitome M; Sekiguchi T; Bando Y; Kirkham M; Hong JI; Wang ZL; Snyder RL
    ACS Nano; 2012 Oct; 6(10):8887-95. PubMed ID: 22947081
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Formation and characterization of Group IV semiconductor nanowires.
    Fukata N; Jevasuwan W
    Nanotechnology; 2024 Jan; 35(12):. PubMed ID: 38096568
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Single-impurity scattering and carrier mobility in doped Ge/Si core-shell nanowires.
    Lee H; Choi HJ
    Nano Lett; 2010 Jun; 10(6):2207-10. PubMed ID: 20499894
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Diameter-dependent dopant location in silicon and germanium nanowires.
    Xie P; Hu Y; Fang Y; Huang J; Lieber CM
    Proc Natl Acad Sci U S A; 2009 Sep; 106(36):15254-8. PubMed ID: 19706402
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires.
    Nah J; Dillen DC; Varahramyan KM; Banerjee SK; Tutuc E
    Nano Lett; 2012 Jan; 12(1):108-12. PubMed ID: 22111925
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Physical mechanism of surface roughening of the radial Ge-core/Si-shell nanowire heterostructure and thermodynamic prediction of surface stability of the InAs-core/GaAs-shell nanowire structure.
    Cao YY; Ouyang G; Wang CX; Yang GW
    Nano Lett; 2013 Feb; 13(2):436-43. PubMed ID: 23297740
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures.
    Lin YC; Kim D; Li Z; Nguyen BM; Li N; Zhang S; Yoo J
    Nanoscale; 2017 Jan; 9(3):1213-1220. PubMed ID: 28050613
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Boron distributions in individual core-shell Ge/Si and Si/Ge heterostructured nanowires.
    Han B; Shimizu Y; Wipakorn J; Nishibe K; Tu Y; Inoue K; Fukata N; Nagai Y
    Nanoscale; 2016 Dec; 8(47):19811-19815. PubMed ID: 27874128
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Structural properties of silicon-germanium and germanium-silicon core-shell nanowires.
    O'Rourke C; Mujahed SY; Kumarasinghe C; Miyazaki T; Bowler DR
    J Phys Condens Matter; 2018 Nov; 30(46):465303. PubMed ID: 30284970
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Thermal conductivity of ge and ge-si core-shell nanowires in the phonon confinement regime.
    Wingert MC; Chen ZC; Dechaumphai E; Moon J; Kim JH; Xiang J; Chen R
    Nano Lett; 2011 Dec; 11(12):5507-13. PubMed ID: 22112167
    [TBL] [Abstract][Full Text] [Related]  

  • 15. The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.
    Wu J; Wieligor M; Zerda TW; Coffer JL
    Nanoscale; 2010 Dec; 2(12):2657-67. PubMed ID: 20931125
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Efficient electron and hole doping in compositionally abrupt Si/Ge nanowires.
    Li P; Zhou R; Pan B; Zeng XC
    Nanoscale; 2013 May; 5(9):3880-8. PubMed ID: 23525137
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Observation of hole accumulation in Ge/Si core/shell nanowires using off-axis electron holography.
    Li L; Smith DJ; Dailey E; Madras P; Drucker J; McCartney MR
    Nano Lett; 2011 Feb; 11(2):493-7. PubMed ID: 21244011
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Producing Atomically Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires by Thermal Oxidation.
    Lee HY; Shen TH; Hu CY; Tsai YY; Wen CY
    Nano Lett; 2017 Dec; 17(12):7494-7499. PubMed ID: 29185770
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors.
    Simanullang MDK; Wisna GBM; Usami K; Oda S
    Nanoscale Adv; 2020 Apr; 2(4):1465-1472. PubMed ID: 36132315
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Gate-modulated thermoelectric power factor of hole gas in Ge-Si core-shell nanowires.
    Moon J; Kim JH; Chen ZC; Xiang J; Chen R
    Nano Lett; 2013 Mar; 13(3):1196-202. PubMed ID: 23394480
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.