These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
202 related articles for article (PubMed ID: 35022590)
1. A crossbar array of magnetoresistive memory devices for in-memory computing. Jung S; Lee H; Myung S; Kim H; Yoon SK; Kwon SW; Ju Y; Kim M; Yi W; Han S; Kwon B; Seo B; Lee K; Koh GH; Lee K; Song Y; Choi C; Ham D; Kim SJ Nature; 2022 Jan; 601(7892):211-216. PubMed ID: 35022590 [TBL] [Abstract][Full Text] [Related]
2. An ultrafast bipolar flash memory for self-activated in-memory computing. Huang X; Liu C; Tang Z; Zeng S; Wang S; Zhou P Nat Nanotechnol; 2023 May; 18(5):486-492. PubMed ID: 36941359 [TBL] [Abstract][Full Text] [Related]
3. Precision-extension technique for accurate vector-matrix multiplication with a CNT transistor crossbar array. Kim S; Lee Y; Kim HD; Choi SJ Nanoscale; 2019 Nov; 11(44):21449-21457. PubMed ID: 31682243 [TBL] [Abstract][Full Text] [Related]
4. Spin device-based image edge detection architecture for neuromorphic computing. Verma G; Soni S; Kaushik BK Nanotechnology; 2023 Nov; 35(5):. PubMed ID: 37797609 [TBL] [Abstract][Full Text] [Related]
5. Self-selective van der Waals heterostructures for large scale memory array. Sun L; Zhang Y; Han G; Hwang G; Jiang J; Joo B; Watanabe K; Taniguchi T; Kim YM; Yu WJ; Kong BS; Zhao R; Yang H Nat Commun; 2019 Jul; 10(1):3161. PubMed ID: 31320651 [TBL] [Abstract][Full Text] [Related]
6. Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing. Xiao Z; Naik VB; Lim JH; Hou Y; Wang Z; Shao Q Sci Adv; 2024 Sep; 10(38):eadp3710. PubMed ID: 39292793 [TBL] [Abstract][Full Text] [Related]
7. All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing. Lin H; Luo X; Liu L; Wang D; Zhao X; Wang Z; Xue X; Zhang F; Xing G Micromachines (Basel); 2022 Feb; 13(2):. PubMed ID: 35208443 [TBL] [Abstract][Full Text] [Related]
8. Memcapacitor Crossbar Array with Charge Trap NAND Flash Structure for Neuromorphic Computing. Hwang S; Yu J; Song MS; Hwang H; Kim H Adv Sci (Weinh); 2023 Nov; 10(32):e2303817. PubMed ID: 37752771 [TBL] [Abstract][Full Text] [Related]
9. Artificial Neural Network for Response Inference of a Nonvolatile Resistance-Switch Array. Kim G; Kornijcuk V; Kim D; Kim I; Hwang CS; Jeong DS Micromachines (Basel); 2019 Mar; 10(4):. PubMed ID: 30934793 [TBL] [Abstract][Full Text] [Related]
10. Li Y; Xiao TP; Bennett CH; Isele E; Melianas A; Tao H; Marinella MJ; Salleo A; Fuller EJ; Talin AA Front Neurosci; 2021; 15():636127. PubMed ID: 33897351 [TBL] [Abstract][Full Text] [Related]
11. Memristive Architectures Exploiting Self-Compliance Multilevel Implementation on 1 kb Crossbar Arrays for Online and Offline Learning Neuromorphic Applications. Kim S; Ji H; Park K; So H; Kim H; Kim S; Choi WY ACS Nano; 2024 Sep; 18(36):25128-25143. PubMed ID: 39167108 [TBL] [Abstract][Full Text] [Related]
12. Mixed-Precision Deep Learning Based on Computational Memory. Nandakumar SR; Le Gallo M; Piveteau C; Joshi V; Mariani G; Boybat I; Karunaratne G; Khaddam-Aljameh R; Egger U; Petropoulos A; Antonakopoulos T; Rajendran B; Sebastian A; Eleftheriou E Front Neurosci; 2020; 14():406. PubMed ID: 32477047 [TBL] [Abstract][Full Text] [Related]
13. A fully hardware-based memristive multilayer neural network. Kiani F; Yin J; Wang Z; Yang JJ; Xia Q Sci Adv; 2021 Nov; 7(48):eabj4801. PubMed ID: 34818038 [TBL] [Abstract][Full Text] [Related]
14. All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics. Bae YC; Lee AR; Baek GH; Chung JB; Kim TY; Park JG; Hong JP Sci Rep; 2015 Aug; 5():13362. PubMed ID: 26289565 [TBL] [Abstract][Full Text] [Related]
16. Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware. Li S; Pam ME; Li Y; Chen L; Chien YC; Fong X; Chi D; Ang KW Adv Mater; 2022 Jun; 34(25):e2103376. PubMed ID: 34510567 [TBL] [Abstract][Full Text] [Related]
17. Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing. Feng X; Li S; Wong SL; Tong S; Chen L; Zhang P; Wang L; Fong X; Chi D; Ang KW ACS Nano; 2021 Jan; 15(1):1764-1774. PubMed ID: 33443417 [TBL] [Abstract][Full Text] [Related]
18. Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions. Chen YC; Lin CC; Chang YF Micromachines (Basel); 2021 Jan; 12(1):. PubMed ID: 33401642 [TBL] [Abstract][Full Text] [Related]
19. In-Memory Mathematical Operations with Spin-Orbit Torque Devices. Li R; Song M; Guo Z; Li S; Duan W; Zhang S; Tian Y; Chen Z; Bao Y; Cui J; Xu Y; Wang Y; Tong W; Yuan Z; Cui Y; Xi L; Feng D; Yang X; Zou X; Hong J; You L Adv Sci (Weinh); 2022 Sep; 9(25):e2202478. PubMed ID: 35811307 [TBL] [Abstract][Full Text] [Related]