146 related articles for article (PubMed ID: 35040457)
1. GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays.
Güniat L; Ghisalberti L; Wang L; Dais C; Morgan N; Dede D; Kim W; Balgarkashi A; Leran JB; Minamisawa R; Solak H; Carter C; Fontcuberta I Morral A
Nanoscale Horiz; 2022 Jan; 7(2):211-219. PubMed ID: 35040457
[TBL] [Abstract][Full Text] [Related]
2. High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.
Russo-Averchi E; Vukajlovic Plestina J; Tütüncüoglu G; Matteini F; Dalmau-Mallorquí A; de la Mata M; Rüffer D; Potts HA; Arbiol J; Conesa-Boj S; Fontcuberta i Morral A
Nano Lett; 2015 May; 15(5):2869-74. PubMed ID: 25894762
[TBL] [Abstract][Full Text] [Related]
3. Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires.
Schroth P; Al Humaidi M; Feigl L; Jakob J; Al Hassan A; Davtyan A; Küpers H; Tahraoui A; Geelhaar L; Pietsch U; Baumbach T
Nano Lett; 2019 Jul; 19(7):4263-4271. PubMed ID: 31150261
[TBL] [Abstract][Full Text] [Related]
4. Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays.
Shi T; Wang X; Wang B; Wang W; Yang X; Yang W; Chen Q; Xu H; Xu S; Yang T
Nanotechnology; 2015 Jul; 26(26):265302. PubMed ID: 26062784
[TBL] [Abstract][Full Text] [Related]
5. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning.
Plissard S; Larrieu G; Wallart X; Caroff P
Nanotechnology; 2011 Jul; 22(27):275602. PubMed ID: 21597162
[TBL] [Abstract][Full Text] [Related]
6. Using colloid lithography to fabricate silicon nanopillar arrays on silicon substrates.
Chen JK; Qui JQ; Fan SK; Kuo SW; Ko FH; Chu CW; Chang FC
J Colloid Interface Sci; 2012 Feb; 367(1):40-8. PubMed ID: 22104277
[TBL] [Abstract][Full Text] [Related]
7. Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth.
Madaria AR; Yao M; Chi C; Huang N; Lin C; Li R; Povinelli ML; Dapkus PD; Zhou C
Nano Lett; 2012 Jun; 12(6):2839-45. PubMed ID: 22594573
[TBL] [Abstract][Full Text] [Related]
8. Stable and high yield growth of GaP and In
Scaccabarozzi A; Cattoni A; Patriarche G; Travers L; Collin S; Harmand JC; Glas F; Oehler F
Nanoscale; 2020 Sep; 12(35):18240-18248. PubMed ID: 32856654
[TBL] [Abstract][Full Text] [Related]
9. Focused ion beam lithography for position-controlled nanowire growth.
Mosberg AB; Ren D; Ahtapodov L; Weman H; Fimland BO; van Helvoort ATJ
Nanotechnology; 2023 Jun; 34(33):. PubMed ID: 37146597
[TBL] [Abstract][Full Text] [Related]
10. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
Hijazi H; Monier G; Gil E; Trassoudaine A; Bougerol C; Leroux C; Castellucci D; Robert-Goumet C; Hoggan PE; André Y; Isik Goktas N; LaPierre RR; Dubrovskii VG
Nano Lett; 2019 Jul; 19(7):4498-4504. PubMed ID: 31203632
[TBL] [Abstract][Full Text] [Related]
11. Template-assisted vapour-liquid-solid growth of InP nanowires on (001) InP and Si substrates.
Jafari Jam R; Persson AR; Barrigón E; Heurlin M; Geijselaers I; Gómez VJ; Hultin O; Samuelson L; Borgström MT; Pettersson H
Nanoscale; 2020 Jan; 12(2):888-894. PubMed ID: 31833520
[TBL] [Abstract][Full Text] [Related]
12. Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires.
Dubrovskii VG; Hijazi H
Nanomaterials (Basel); 2020 Apr; 10(5):. PubMed ID: 32349326
[TBL] [Abstract][Full Text] [Related]
13. Location-Controlled Growth of Vertically Aligned Si Nanowires using Au Nanodisks Patterned by KrF Stepper Lithography.
Park YS; Lee JS
Chem Asian J; 2016 Jul; 11(13):1878-82. PubMed ID: 27283959
[TBL] [Abstract][Full Text] [Related]
14. Large-Scale Monolithic Fabrication of III-V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate.
Lecestre A; Martin M; Cristiano F; Baron T; Larrieu G
ACS Omega; 2022 Feb; 7(7):5836-5843. PubMed ID: 35224344
[TBL] [Abstract][Full Text] [Related]
15. Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.
Yu X; Wang H; Lu J; Zhao J; Misuraca J; Xiong P; von Molnár S
Nano Lett; 2012 Oct; 12(10):5436-42. PubMed ID: 22984828
[TBL] [Abstract][Full Text] [Related]
16. III-V Integration on Si(100): Vertical Nanospades.
Güniat L; Martí-Sánchez S; Garcia O; Boscardin M; Vindice D; Tappy N; Friedl M; Kim W; Zamani M; Francaviglia L; Balgarkashi A; Leran JB; Arbiol J; Fontcuberta I Morral A
ACS Nano; 2019 May; 13(5):5833-5840. PubMed ID: 31038924
[TBL] [Abstract][Full Text] [Related]
17. A technique for large-area position-controlled growth of GaAs nanowire arrays.
Kauppinen C; Haggren T; Kravchenko A; Jiang H; Huhtio T; Kauppinen E; Dhaka V; Suihkonen S; Kaivola M; Lipsanen H; Sopanen M
Nanotechnology; 2016 Apr; 27(13):135601. PubMed ID: 26895144
[TBL] [Abstract][Full Text] [Related]
18. Improving the yield of GaAs nanowires on silicon by Ga pre-deposition.
Wilson DP; Dubrovskii VG; LaPierre RR
Nanotechnology; 2021 Apr; 32(26):. PubMed ID: 33730697
[TBL] [Abstract][Full Text] [Related]
19. Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography.
Munshi AM; Dheeraj DL; Fauske VT; Kim DC; Huh J; Reinertsen JF; Ahtapodov L; Lee KD; Heidari B; van Helvoort AT; Fimland BO; Weman H
Nano Lett; 2014 Feb; 14(2):960-6. PubMed ID: 24467394
[TBL] [Abstract][Full Text] [Related]
20. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
Dubrovskii VG; Xu T; Álvarez AD; Plissard SR; Caroff P; Glas F; Grandidier B
Nano Lett; 2015 Aug; 15(8):5580-4. PubMed ID: 26189571
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
