154 related articles for article (PubMed ID: 35054574)
1. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O
Liu WS; Hsu CH; Jiang Y; Lai YC; Kuo HC
Membranes (Basel); 2021 Dec; 12(1):. PubMed ID: 35054574
[TBL] [Abstract][Full Text] [Related]
2. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
[TBL] [Abstract][Full Text] [Related]
3. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
Han Y; Lee DH; Cho ES; Kwon SJ; Yoo H
Micromachines (Basel); 2023 Jul; 14(7):. PubMed ID: 37512704
[TBL] [Abstract][Full Text] [Related]
4. Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing.
Zhang X; Li Y; Li Y; Xie X; Yin L
Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398954
[TBL] [Abstract][Full Text] [Related]
5. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.
Chen FH; Her JL; Shao YH; Matsuda YH; Pan TM
Nanoscale Res Lett; 2013 Jan; 8(1):18. PubMed ID: 23294730
[TBL] [Abstract][Full Text] [Related]
6. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
Moon CJ; Kim HS
ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
[TBL] [Abstract][Full Text] [Related]
7. Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance.
Hu S; Lu K; Ning H; Yao R; Gong Y; Pan Z; Guo C; Wang J; Pang C; Gong Z; Peng J
Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33670767
[TBL] [Abstract][Full Text] [Related]
8. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.
Fan CL; Tseng FP; Tseng CY
Materials (Basel); 2018 May; 11(5):. PubMed ID: 29772767
[TBL] [Abstract][Full Text] [Related]
9. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
[TBL] [Abstract][Full Text] [Related]
10. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
[TBL] [Abstract][Full Text] [Related]
11. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO
Zhang W; Fan Z; Shen A; Dong C
Micromachines (Basel); 2021 Dec; 12(12):. PubMed ID: 34945401
[TBL] [Abstract][Full Text] [Related]
12. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
Kim SH; Cho WJ
J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
[TBL] [Abstract][Full Text] [Related]
13. Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing.
Shin JW; Cho WJ
J Nanosci Nanotechnol; 2020 Jul; 20(7):4276-4281. PubMed ID: 31968457
[TBL] [Abstract][Full Text] [Related]
14. Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with
Chen YM; Wu CH; Chang KM; Zhang YX; Xu N; Yu TY; Chin A
J Nanosci Nanotechnol; 2020 Jul; 20(7):4110-4113. PubMed ID: 31968427
[TBL] [Abstract][Full Text] [Related]
15. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS
Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447
[TBL] [Abstract][Full Text] [Related]
16. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
Zhang Y; He G; Wang L; Wang W; Xu X; Liu W
ACS Nano; 2022 Mar; 16(3):4961-4971. PubMed ID: 35274929
[TBL] [Abstract][Full Text] [Related]
17. A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of
Wu G; Sahoo AK; Chen DW; Chang JW
Materials (Basel); 2018 Dec; 11(12):. PubMed ID: 30544867
[TBL] [Abstract][Full Text] [Related]
18. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.
Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ
ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652
[TBL] [Abstract][Full Text] [Related]
19. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
Wu CH; Chang KM; Chen YM; Zhang YX; Cheng CY
J Nanosci Nanotechnol; 2019 Apr; 19(4):2189-2192. PubMed ID: 30486965
[TBL] [Abstract][Full Text] [Related]
20. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
