These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

138 related articles for article (PubMed ID: 35056300)

  • 1. A Novel Bidirectional AlGaN/GaN ESD Protection Diode.
    Yao B; Shi Y; Wang H; Xu X; Chen Y; He Z; Xiao Q; Wang L; Lu G; Li H; Huang Y; Zhang B
    Micromachines (Basel); 2022 Jan; 13(1):. PubMed ID: 35056300
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability.
    He Z; Shi Y; Huang Y; Chen Y; Wang H; Wang L; Lu G; Xin Y
    Micromachines (Basel); 2022 Feb; 13(2):. PubMed ID: 35208423
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range.
    Wang S; Zhou Q; Chen K; Bai P; Wang J; Zhu L; Zhou C; Gao W; Zhang B
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057371
    [TBL] [Abstract][Full Text] [Related]  

  • 4. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
    Hong S; Rana Au; Heo JW; Kim HS
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers.
    Guo H; Li Y; Yu X; Zhou J; Kong Y
    Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144109
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs.
    Guo H; Chen T; Shi S
    Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31936651
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
    Vuong TA; Cha HY; Kim H
    Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34068454
    [TBL] [Abstract][Full Text] [Related]  

  • 9. A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance.
    Liu J; Guo Y; Zhang J; Yao J; Li M; Zhang M; Chen J; Huang X; Huang C
    Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683299
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
    Lee YJ; Yao YC; Huang CY; Lin TY; Cheng LL; Liu CY; Wang MT; Hwang JM
    Nanoscale Res Lett; 2014; 9(1):433. PubMed ID: 25206318
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor.
    Baek SH; Lee GW; Cho CY; Lee SN
    Sci Rep; 2021 Mar; 11(1):7172. PubMed ID: 33785795
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate.
    Huang YC; Chiu HC; Kao HL; Wang HC; Liu CH; Huang CR; Chen SW
    Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34062908
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage.
    Xia X; Guo Z; Sun H
    Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832730
    [TBL] [Abstract][Full Text] [Related]  

  • 14. A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode.
    Zhang A; Zhou Q; Yang C; Shi Y; Chen W; Li Z; Zhang B
    Nanoscale Res Lett; 2019 Jan; 14(1):23. PubMed ID: 30645720
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
    Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
    Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT.
    Liu C; Wang J; Chen Z; Liu J; Su J
    Micromachines (Basel); 2023 Jan; 14(2):. PubMed ID: 36838005
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
    Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
    Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic.
    Wu TL; Tang SW; Jiang HJ
    Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32028702
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates.
    Kim ZS; Lee HS; Bae SB; Ahn H; Lee SH; Lim JW; Kang DM
    J Nanosci Nanotechnol; 2021 Aug; 21(8):4429-4433. PubMed ID: 33714339
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction.
    Sun T; Luo X; Wei J; Yang C; Zhang B
    Nanoscale Res Lett; 2020 Jul; 15(1):149. PubMed ID: 32676687
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.