168 related articles for article (PubMed ID: 35107454)
1. Electronic properties and interfacial contact of graphene/CrSiTe
Chen L; Jiang C; Yang M; Wang D; Shi C; Liu H; Cui G; Li X; Shi J
Phys Chem Chem Phys; 2022 Feb; 24(7):4280-4286. PubMed ID: 35107454
[TBL] [Abstract][Full Text] [Related]
2. Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures.
Qin X; Hu W; Yang J
Phys Chem Chem Phys; 2019 Nov; 21(42):23611-23619. PubMed ID: 31624813
[TBL] [Abstract][Full Text] [Related]
3. Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure.
Wang S; Chou JP; Ren C; Tian H; Yu J; Sun C; Xu Y; Sun M
Sci Rep; 2019 Mar; 9(1):5208. PubMed ID: 30914666
[TBL] [Abstract][Full Text] [Related]
4. Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe
Lan Y; Xia LX; Huang T; Xu W; Huang GF; Hu W; Huang WQ
Nanoscale Res Lett; 2020 Sep; 15(1):180. PubMed ID: 32955632
[TBL] [Abstract][Full Text] [Related]
5. Interfacial Electronic Properties and Tunable Contact Types in Graphene/Janus MoGeSiN
Binh NTT; Nguyen CQ; Vu TV; Nguyen CV
J Phys Chem Lett; 2021 Apr; 12(16):3934-3940. PubMed ID: 33872012
[TBL] [Abstract][Full Text] [Related]
6. Tunable Schottky barrier in InTe/graphene van der Waals heterostructure.
Li H; Zhou Z; Wang H
Nanotechnology; 2020 Aug; 31(33):335201. PubMed ID: 32348976
[TBL] [Abstract][Full Text] [Related]
7. Van der Waals heterostructure of graphene and germanane: tuning the ohmic contact by electrostatic gating and mechanical strain.
Bafekry A; Karbasizadeh S; Faraji M; Bagheri Khatibani A; Sarsari IA; Gogova D; Ghergherehchi M
Phys Chem Chem Phys; 2021 Sep; 23(37):21196-21206. PubMed ID: 34532725
[TBL] [Abstract][Full Text] [Related]
8. Tuning the Schottky barrier height in graphene/monolayer-GeI
de Andrade Deus DP; de Oliveira ISS
J Phys Condens Matter; 2020 May; 32(35):. PubMed ID: 32320968
[TBL] [Abstract][Full Text] [Related]
9. Dipole controlled Schottky barrier in the blue-phosphorene-phase of GeSe based van der Waals heterostructures.
Peng L; Cui Y; Sun L; Du J; Wang S; Zhang S; Huang Y
Nanoscale Horiz; 2019 Mar; 4(2):480-489. PubMed ID: 32254101
[TBL] [Abstract][Full Text] [Related]
10. Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure.
Phuc HV; Hieu NN; Hoi BD; Nguyen CV
Phys Chem Chem Phys; 2018 Jul; 20(26):17899-17908. PubMed ID: 29926024
[TBL] [Abstract][Full Text] [Related]
11. Interface dependence of electrical contact and graphene doping in graphene/XPtY (X, Y = S, Se, and Te) heterostructures.
Ju W; Wang D; Zhou Q; Kang D; Li T; Hu G; Li H
Phys Chem Chem Phys; 2021 Sep; 23(35):19297-19307. PubMed ID: 34524280
[TBL] [Abstract][Full Text] [Related]
12. Controllable Schottky barriers and contact types of BN intercalation layers in graphene/MoSi
Guo Y; Dong Y; Cai X; Liu L; Jia Y
Phys Chem Chem Phys; 2022 Aug; 24(30):18331-18339. PubMed ID: 35880664
[TBL] [Abstract][Full Text] [Related]
13. Adjusting the electronic properties and contact types of graphene/F-diamane-like C
Do TN; Nguyen ST; Nguyen CQ
RSC Adv; 2021 Nov; 11(60):37981-37987. PubMed ID: 35498061
[TBL] [Abstract][Full Text] [Related]
14. Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain.
Zhang WX; Yin Y; He C
Phys Chem Chem Phys; 2020 Nov; 22(45):26231-26240. PubMed ID: 33174552
[TBL] [Abstract][Full Text] [Related]
15. Tunable interlayer coupling and Schottky barrier in graphene and Janus MoSSe heterostructures by applying an external field.
Li Y; Wang J; Zhou B; Wang F; Miao Y; Wei J; Zhang B; Zhang K
Phys Chem Chem Phys; 2018 Oct; 20(37):24109-24116. PubMed ID: 30204181
[TBL] [Abstract][Full Text] [Related]
16. Tunability of the electronic properties and electrical contact in graphene/SiH heterostructures.
Nguyen ST; Cuong PV; Nguyen CQ; Nguyen CV
Phys Chem Chem Phys; 2022 Oct; 24(41):25144-25150. PubMed ID: 36239182
[TBL] [Abstract][Full Text] [Related]
17. First-principles calculations of the electronic properties of SiC-based bilayer and trilayer heterostructures.
Li S; Sun M; Chou JP; Wei J; Xing H; Hu A
Phys Chem Chem Phys; 2018 Oct; 20(38):24726-24734. PubMed ID: 30225488
[TBL] [Abstract][Full Text] [Related]
18. Interface contact and modulated electronic properties by in-plain strains in a graphene-MoS
Wang Q; Song Z; Tao J; Jin H; Li S; Wang Y; Liu X; Zhang L
RSC Adv; 2023 Jan; 13(5):2903-2911. PubMed ID: 36756432
[TBL] [Abstract][Full Text] [Related]
19. Tunable Schottky barrier in Janus-
Guo H; Lang X; Tian X; Jiang W; Wang G
Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35817003
[TBL] [Abstract][Full Text] [Related]
20. A graphene/Janus B
Xie T; Ma X; Guo Y; Yuan G; Liao J; Ma N; Huang C
Phys Chem Chem Phys; 2023 Nov; 25(45):31238-31248. PubMed ID: 37955158
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]