169 related articles for article (PubMed ID: 35133784)
1. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf
Zhang F; Luo ZD; Yang Q; Zhou J; Wang J; Zhang Z; Fan Q; Peng Y; Wu Z; Liu F; Chen S; He D; Yin H; Han G; Liu Y; Hao Y
ACS Appl Mater Interfaces; 2022 Mar; 14(8):11028-11037. PubMed ID: 35133784
[TBL] [Abstract][Full Text] [Related]
2. Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf
Oh Y; Lee SW; Choi JH; Ahn SE; Kim HB; Ahn JH
Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570505
[TBL] [Abstract][Full Text] [Related]
3. High polarization and wake-up free ferroelectric characteristics in ultrathin Hf
Yadav M; Kashir A; Oh S; Nikam RD; Kim H; Jang H; Hwang H
Nanotechnology; 2021 Dec; 33(8):. PubMed ID: 34787101
[TBL] [Abstract][Full Text] [Related]
4. Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited
Kim HB; Jung M; Oh Y; Lee SW; Suh D; Ahn JH
Nanoscale; 2021 May; 13(18):8524-8530. PubMed ID: 33908540
[TBL] [Abstract][Full Text] [Related]
5. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films.
Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477
[TBL] [Abstract][Full Text] [Related]
6. Direct comparison of ferroelectric properties in Hf
Hur J; Tasneem N; Choe G; Wang P; Wang Z; Khan AI; Yu S
Nanotechnology; 2020 Dec; 31(50):505707. PubMed ID: 32663805
[TBL] [Abstract][Full Text] [Related]
7. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films.
Chen HY; Jiang YS; Chuang CH; Mo CL; Wang TY; Lin HC; Chen MJ
Nanotechnology; 2023 Dec; 35(10):. PubMed ID: 37995361
[TBL] [Abstract][Full Text] [Related]
8. Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf
Toprasertpong K; Tahara K; Hikosaka Y; Nakamura K; Saito H; Takenaka M; Takagi S
ACS Appl Mater Interfaces; 2022 Nov; 14(45):51137-51148. PubMed ID: 36319949
[TBL] [Abstract][Full Text] [Related]
9. Reduced fatigue and leakage of ferroelectric TiN/Hf
Hsain HA; Lee Y; Lancaster S; Lomenzo PD; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
Nanotechnology; 2023 Jan; 34(12):. PubMed ID: 36538824
[TBL] [Abstract][Full Text] [Related]
10. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf
Kim SJ; Mohan J; Kim HS; Hwang SM; Kim N; Jung YC; Sahota A; Kim K; Yu HY; Cha PR; Young CD; Choi R; Ahn J; Kim J
Materials (Basel); 2020 Jul; 13(13):. PubMed ID: 32630791
[TBL] [Abstract][Full Text] [Related]
11. Ferroelectric-Antiferroelectric Transition of Hf
Dahlberg H; Persson AEO; Athle R; Wernersson LE
ACS Appl Electron Mater; 2022 Dec; 4(12):6357-6363. PubMed ID: 36588621
[TBL] [Abstract][Full Text] [Related]
12. Improving the ferroelectric properties of Lu doped Hf
Xiao Y; Yang L; Jiang Y; Liu S; Li G; Ouyang J; Tang M
Nanotechnology; 2024 Jul; 35(38):. PubMed ID: 38925105
[TBL] [Abstract][Full Text] [Related]
13. Characteristics of Hf
Hong DH; Yoo JH; Park WJ; Kim SW; Kim JH; Uhm SH; Lee HC
Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903776
[TBL] [Abstract][Full Text] [Related]
14. Visualizing Ferroelectric Uniformity of Hf
Chang SJ; Teng CY; Lin YJ; Wu TM; Lee MH; Lin BH; Tang MT; Wu TS; Hu C; Tang EY; Tseng YC
ACS Appl Mater Interfaces; 2021 Jun; 13(24):29212-29221. PubMed ID: 34121385
[TBL] [Abstract][Full Text] [Related]
15. Enhanced Switching Reliability of Hf
Huang F; Saini B; Yu Z; Yoo C; Thampy V; He X; Baniecki JD; Tsai W; Meng AC; McIntyre PC; Wong S
ACS Appl Mater Interfaces; 2023 Nov; 15(43):50246-50253. PubMed ID: 37856882
[TBL] [Abstract][Full Text] [Related]
16. Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films.
Park MH; Kim HJ; Kim YJ; Lee YH; Moon T; Kim KD; Hyun SD; Fengler F; Schroeder U; Hwang CS
ACS Appl Mater Interfaces; 2016 Jun; 8(24):15466-75. PubMed ID: 27237137
[TBL] [Abstract][Full Text] [Related]
17. Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects.
Huang F; Saini B; Wan L; Lu H; He X; Qin S; Tsai W; Gruverman A; Meng AC; Wong HP; McIntyre PC; Wong S
ACS Nano; 2024 Jun; ():. PubMed ID: 38916257
[TBL] [Abstract][Full Text] [Related]
18. Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures.
Tasneem N; Kashyap H; Chae K; Park C; Lee PC; Lombardo SF; Afroze N; Tian M; Kumarasubramanian H; Hur J; Chen H; Chern W; Yu S; Bandaru P; Ravichandran J; Cho K; Kacher J; Kummel AC; Khan AI
ACS Appl Mater Interfaces; 2022 Sep; 14(38):43897-43906. PubMed ID: 36121320
[TBL] [Abstract][Full Text] [Related]
19. HfO
Kang M; Peng Y; Xiao W; Zhang Y; Wang Z; Du P; Jiang H; Liu F; Liu Y; Hao Y; Han G
ACS Appl Mater Interfaces; 2024 Jan; 16(2):2954-2963. PubMed ID: 38166401
[TBL] [Abstract][Full Text] [Related]
20. Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf
Wang X; Wen Y; Wu M; Cui B; Wu YS; Li Y; Li X; Ye S; Ren P; Ji ZG; Lu HL; Wang R; Zhang DW; Huang R
ACS Appl Mater Interfaces; 2023 Mar; 15(12):15657-15667. PubMed ID: 36926843
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
