173 related articles for article (PubMed ID: 35160649)
1. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer.
Weng YC; Lin YC; Hsu HT; Kao ML; Huang HY; Ueda D; Ha MT; Yang CY; Maa JS; Chang EY; Dee CF
Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160649
[TBL] [Abstract][Full Text] [Related]
2. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
Lee YJ; Yao YC; Huang CY; Lin TY; Cheng LL; Liu CY; Wang MT; Hwang JM
Nanoscale Res Lett; 2014; 9(1):433. PubMed ID: 25206318
[TBL] [Abstract][Full Text] [Related]
3. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
Lee HP; Perozek J; Rosario LD; Bayram C
Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
[TBL] [Abstract][Full Text] [Related]
4. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.
Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y
Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635
[TBL] [Abstract][Full Text] [Related]
5. Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications.
Li C; Chen X; Wang Z
Micromachines (Basel); 2024 Feb; 15(3):. PubMed ID: 38542577
[TBL] [Abstract][Full Text] [Related]
6. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
[TBL] [Abstract][Full Text] [Related]
7. A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor.
Meng Q; Lin Q; Han F; Jing W; Wang Y; Jiang Z
Materials (Basel); 2021 Oct; 14(20):. PubMed ID: 34683785
[TBL] [Abstract][Full Text] [Related]
8. Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps.
Song YL; Reddy MK; Chang LM; Sheu G
Micromachines (Basel); 2021 Jun; 12(7):. PubMed ID: 34206818
[TBL] [Abstract][Full Text] [Related]
9. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
[TBL] [Abstract][Full Text] [Related]
10. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
Dong Y; Son DH; Dai Q; Lee JH; Won CH; Kim JG; Chen D; Lee JH; Lu H; Zhang R; Zheng Y
Sensors (Basel); 2018 Apr; 18(5):. PubMed ID: 29695112
[TBL] [Abstract][Full Text] [Related]
11. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A; Borga M; Meneghini M; De Santi C; Benazzi D; Besendörfer S; Püsche R; Derluyn J; Degroote S; Germain M; Kabouche R; Abid I; Meissner E; Zanoni E; Medjdoub F; Meneghesso G
Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31963553
[TBL] [Abstract][Full Text] [Related]
12. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
[TBL] [Abstract][Full Text] [Related]
13. Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates.
Huang CR; Chiu HC; Liu CH; Wang HC; Kao HL; Chen CT; Chang KJ
Membranes (Basel); 2021 Oct; 11(11):. PubMed ID: 34832077
[TBL] [Abstract][Full Text] [Related]
14. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.
Lee MW; Chuang CW; Gamiz F; Chang EY; Lin YC
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258200
[TBL] [Abstract][Full Text] [Related]
15. A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance.
Liu J; Guo Y; Zhang J; Yao J; Li M; Zhang M; Chen J; Huang X; Huang C
Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683299
[TBL] [Abstract][Full Text] [Related]
16. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
[TBL] [Abstract][Full Text] [Related]
17. Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.
Kaushik PK; Singh SK; Gupta A; Basu A; Chang EY
Nanoscale Res Lett; 2021 Oct; 16(1):159. PubMed ID: 34669088
[TBL] [Abstract][Full Text] [Related]
18. Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers.
Jung JH; Yoon YJ; Cho MS; Kim BG; Jang WD; Kang IM
J Nanosci Nanotechnol; 2019 Oct; 19(10):6008-6015. PubMed ID: 31026900
[TBL] [Abstract][Full Text] [Related]
19. Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure.
Lin CF; Huang KP; Wang HW; Chen KT; Wang CJ; Kao YC; Chen H; Lin YS
ACS Omega; 2024 Jun; 9(23):25277-25282. PubMed ID: 38882064
[TBL] [Abstract][Full Text] [Related]
20. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
