These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

216 related articles for article (PubMed ID: 35160775)

  • 1. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.
    Lo Nigro R; Fiorenza P; Greco G; Schilirò E; Roccaforte F
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160775
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices.
    Calzolaro A; Mikolajick T; Wachowiak A
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160737
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.
    Ma CT; Gu ZH
    Micromachines (Basel); 2021 Jan; 12(1):. PubMed ID: 33430093
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Al
    Schilirò E; Fiorenza P; Lo Nigro R; Galizia B; Greco G; Di Franco S; Bongiorno C; La Via F; Giannazzo F; Roccaforte F
    Materials (Basel); 2023 Aug; 16(16):. PubMed ID: 37629929
    [TBL] [Abstract][Full Text] [Related]  

  • 5. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
    Roccaforte F; Greco G; Fiorenza P; Iucolano F
    Materials (Basel); 2019 May; 12(10):. PubMed ID: 31096689
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.
    Tsai SJ; Wang CL; Lee HC; Lin CY; Chen JW; Shiu HW; Chang LY; Hsueh HT; Chen HY; Tsai JY; Lu YH; Chang TC; Tu LW; Teng H; Chen YC; Chen CH; Wu CL
    Sci Rep; 2016 Jun; 6():28326. PubMed ID: 27325155
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review.
    Zhan T; Xu M; Cao Z; Zheng C; Kurita H; Narita F; Wu YJ; Xu Y; Wang H; Song M; Wang W; Zhou Y; Liu X; Shi Y; Jia Y; Guan S; Hanajiri T; Maekawa T; Okino A; Watanabe T
    Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004933
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.
    Li F; Roccaforte F; Greco G; Fiorenza P; La Via F; Pérez-Tomas A; Evans JE; Fisher CA; Monaghan FA; Mawby PA; Jennings M
    Materials (Basel); 2021 Oct; 14(19):. PubMed ID: 34640228
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.
    Zhuang J; Sun QJ; Zhou Y; Han ST; Zhou L; Yan Y; Peng H; Venkatesh S; Wu W; Li RK; Roy VA
    ACS Appl Mater Interfaces; 2016 Nov; 8(45):31128-31135. PubMed ID: 27762140
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon.
    Pain SL; Khorani E; Niewelt T; Wratten A; Walker M; Grant NE; Murphy JD
    Nanoscale; 2023 Jun; 15(25):10593-10605. PubMed ID: 37284742
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits.
    Liu A; Zhu H; Sun H; Xu Y; Noh YY
    Adv Mater; 2018 Jun; ():e1706364. PubMed ID: 29904984
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices.
    Rafin SMSH; Ahmed R; Haque MA; Hossain MK; Haque MA; Mohammed OA
    Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004900
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.
    Shih HY; Lin MC; Chen LY; Chen MJ
    Nanotechnology; 2015 Jan; 26(1):014002. PubMed ID: 25494474
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering.
    Galvão N; Guerino M; Campos T; Grigorov K; Fraga M; Rodrigues B; Pessoa R; Camus J; Djouadi M; Maciel H
    Micromachines (Basel); 2019 Mar; 10(3):. PubMed ID: 30909406
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Hybrid gate dielectric materials for unconventional electronic circuitry.
    Ha YG; Everaerts K; Hersam MC; Marks TJ
    Acc Chem Res; 2014 Apr; 47(4):1019-28. PubMed ID: 24428627
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga
    Wellmann PJ
    Z Anorg Allg Chem; 2017 Nov; 643(21):1312-1322. PubMed ID: 29200530
    [TBL] [Abstract][Full Text] [Related]  

  • 17. HfSe
    Mleczko MJ; Zhang C; Lee HR; Kuo HH; Magyari-Köpe B; Moore RG; Shen ZX; Fisher IR; Nishi Y; Pop E
    Sci Adv; 2017 Aug; 3(8):e1700481. PubMed ID: 28819644
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.
    Ülkü A; Uçar E; Serin RB; Kaçar R; Artuç M; Menşur E; Oral AY
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930696
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Interface Electrical Properties of Al
    Fisichella G; Schilirò E; Di Franco S; Fiorenza P; Lo Nigro R; Roccaforte F; Ravesi S; Giannazzo F
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7761-7771. PubMed ID: 28135063
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-κ perovskite membranes as insulators for two-dimensional transistors.
    Huang JK; Wan Y; Shi J; Zhang J; Wang Z; Wang W; Yang N; Liu Y; Lin CH; Guan X; Hu L; Yang ZL; Huang BC; Chiu YP; Yang J; Tung V; Wang D; Kalantar-Zadeh K; Wu T; Zu X; Qiao L; Li LJ; Li S
    Nature; 2022 May; 605(7909):262-267. PubMed ID: 35546188
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.