These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
229 related articles for article (PubMed ID: 35173171)
1. Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance. Khan MA; Maeda N; Yun J; Jo M; Yamada Y; Hirayama H Sci Rep; 2022 Feb; 12(1):2591. PubMed ID: 35173171 [TBL] [Abstract][Full Text] [Related]
2. Suppressing the efficiency droop in AlGaN-based UVB LEDs. Usman M; Malik S; Khan MA; Hirayama H Nanotechnology; 2021 Mar; 32(21):215703. PubMed ID: 33657018 [TBL] [Abstract][Full Text] [Related]
3. Suppressing the efficiency droop in the AlGaN-based UVB LED. Muhammad U; Malik S; Khan MA; Hirayama H Nanotechnology; 2021 Feb; ():. PubMed ID: 33567413 [TBL] [Abstract][Full Text] [Related]
4. Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters. Khan MA; Bermundo JP; Ishikawa Y; Ikenoue H; Fujikawa S; Matsuura E; Kashima Y; Maeda N; Jo M; Hirayama H Nanotechnology; 2021 Jan; 32(5):055702. PubMed ID: 33007768 [TBL] [Abstract][Full Text] [Related]
5. Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer. Lang J; Xu FJ; Ge WK; Liu BY; Zhang N; Sun YH; Wang JM; Wang MX; Xie N; Fang XZ; Kang XN; Qin ZX; Yang XL; Wang XQ; Shen B Opt Express; 2019 Sep; 27(20):A1458-A1466. PubMed ID: 31684498 [TBL] [Abstract][Full Text] [Related]
6. Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer. Sharif MN; Usman M; Niass MI; Liou JJ; Wang F; Liu Y Nanotechnology; 2021 Nov; 33(7):. PubMed ID: 34438377 [TBL] [Abstract][Full Text] [Related]
7. Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering. Zhang ZH; Ju Z; Liu W; Tan ST; Ji Y; Kyaw Z; Zhang X; Hasanov N; Sun XW; Demir HV Opt Lett; 2014 Apr; 39(8):2483-6. PubMed ID: 24979024 [TBL] [Abstract][Full Text] [Related]
8. The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer. Jamil T; Usman M; Malik S; Jamal H Appl Phys A Mater Sci Process; 2021; 127(5):397. PubMed ID: 33967404 [TBL] [Abstract][Full Text] [Related]
9. Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers. Zhang A; Xing Z; Qu Y; Wang F; Liou JJ; Liu Y Opt Express; 2024 Mar; 32(6):10146-10157. PubMed ID: 38571233 [TBL] [Abstract][Full Text] [Related]
10. Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers. Jain B; Velpula RT; Patel M; Sadaf SM; Nguyen HPT Micromachines (Basel); 2021 Mar; 12(3):. PubMed ID: 33801072 [TBL] [Abstract][Full Text] [Related]
11. Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer. Hsieh DH; Tzou AJ; Kao TS; Lai FI; Lin DW; Lin BC; Lu TC; Lai WC; Chen CH; Kuo HC Opt Express; 2015 Oct; 23(21):27145-51. PubMed ID: 26480375 [TBL] [Abstract][Full Text] [Related]
12. On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer. Chu C; Tian K; Che J; Shao H; Kou J; Zhang Y; Li Y; Wang M; Zhu Y; Zhang ZH Opt Express; 2019 Jun; 27(12):A620-A628. PubMed ID: 31252842 [TBL] [Abstract][Full Text] [Related]
13. Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft. Liu X; Lv Z; Liao Z; Sun Y; Zhang Z; Sun K; Zhou Q; Tang B; Geng H; Qi S; Zhou S Microsyst Nanoeng; 2024; 10():110. PubMed ID: 39145147 [TBL] [Abstract][Full Text] [Related]
14. Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer. Pan S; Chen K; Guo Y; Liu Z; Zhou Y; Zhang R; Zheng Y Opt Express; 2022 Dec; 30(25):44933-44942. PubMed ID: 36522906 [TBL] [Abstract][Full Text] [Related]
15. Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer. Lai MJ; Chang YT; Wang SC; Huang SF; Liu RS; Zhang X; Chen LC; Lin RM Molecules; 2022 Nov; 27(21):. PubMed ID: 36364421 [TBL] [Abstract][Full Text] [Related]
16. Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure. Velpula RT; Jain B; Bui HQT; Shakiba FM; Jude J; Tumuna M; Nguyen HD; Lenka TR; Nguyen HPT Appl Opt; 2020 Jun; 59(17):5276-5281. PubMed ID: 32543550 [TBL] [Abstract][Full Text] [Related]
17. Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence. Das S; Lenka TR; Talukdar FA; Nguyen HPT; Crupi G Micromachines (Basel); 2023 Oct; 14(10):. PubMed ID: 37893363 [TBL] [Abstract][Full Text] [Related]
18. Highly reflective Ni/Pt/Al p-electrode for improving the efficiency of an AlGaN-based deep ultraviolet light-emitting diode. Liu K; Jiang K; Wang B; Wang X; Ben J; Zhang S; Chen Y; Jia Y; Liu M; Sun X; Li D Opt Lett; 2024 Jul; 49(14):4030-4033. PubMed ID: 39008769 [TBL] [Abstract][Full Text] [Related]
19. Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier. Yu H; Ren Z; Zhang H; Dai J; Chen C; Long S; Sun H Opt Express; 2019 Sep; 27(20):A1544-A1553. PubMed ID: 31684505 [TBL] [Abstract][Full Text] [Related]
20. Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes. Kolbe T; Knauer A; Rass J; Cho HK; Hagedorn S; Einfeldt S; Kneissl M; Weyers M Materials (Basel); 2017 Dec; 10(12):. PubMed ID: 29211028 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]