These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

198 related articles for article (PubMed ID: 35180714)

  • 1. A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction.
    Chen S; Wang S; Liu H; Han T; Zhang H
    Nanotechnology; 2022 Mar; 33(22):. PubMed ID: 35180714
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.
    Ma B; Chen S; Wang S; Han T; Zhang H; Yin C; Chen Y; Liu H
    Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144097
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Design Optimization of InGaAs/GaAsSb-Based
    Kim BG; Seo JH; Yoon YJ; Cho MS; Kang IM
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6762-6766. PubMed ID: 31027025
    [TBL] [Abstract][Full Text] [Related]  

  • 4. A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance.
    Chen S; Wang S; Liu H; Han T; Xie H; Chong C
    Nanoscale Res Lett; 2020 Oct; 15(1):202. PubMed ID: 33068207
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.
    Li W; Liu H; Wang S; Chen S; Yang Z
    Nanoscale Res Lett; 2017 Dec; 12(1):198. PubMed ID: 28314362
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.
    Chen S; Liu H; Wang S; Li W; Wang X; Zhao L
    Nanoscale Res Lett; 2018 Oct; 13(1):321. PubMed ID: 30315380
    [TBL] [Abstract][Full Text] [Related]  

  • 7. A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications.
    Han K; Long S; Deng Z; Zhang Y; Li J
    Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32028719
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Study of a Gate-Engineered Vertical TFET with GaSb/GaAs
    Xie H; Chen Y; Liu H; Guo D
    Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33804142
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance.
    Chen Q; Sun R; Miao R; Liu H; Yang L; Qi Z; He W; Li J
    Micromachines (Basel); 2023 Mar; 14(4):. PubMed ID: 37421017
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor.
    Duan X; Zhang J; Chen J; Zhang T; Zhu J; Lin Z; Hao Y
    Micromachines (Basel); 2019 Jan; 10(1):. PubMed ID: 30669609
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Electrical Characteristics of Ge/Si-Based Source Pocket Tunnel Field-Effect Transistors.
    Ahn TJ; Yu YS
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5887-5892. PubMed ID: 29677711
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling.
    Kim G; Lee J; Kim JH; Kim S
    Micromachines (Basel); 2019 Jan; 10(2):. PubMed ID: 30678322
    [TBL] [Abstract][Full Text] [Related]  

  • 13. FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design.
    Lin JT; Tai WH
    Discov Nano; 2024 Sep; 19(1):140. PubMed ID: 39227488
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs.
    Seo JH; Yoon YJ; Cho S; Kang IM; Lee JH
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6070-6076. PubMed ID: 31026910
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations.
    Yoon YJ; Eun HR; Seo JH; Kang HS; Lee SM; Lee J; Cho S; Tae HS; Lee JH; Kang IM
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7430-5. PubMed ID: 26726346
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A T-shaped gate tunneling field effect transistor with negative capacitance, super-steep subthreshold swing.
    Li W; Jia Q; Pan Y; Chen X; Yin Y; Wu Y; Wang Y; Wen Y; Wang C; Wang S
    Nanotechnology; 2021 Jul; 32(39):. PubMed ID: 34153962
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET).
    Seo JH; Yoon YJ; Kang IM
    J Nanosci Nanotechnol; 2018 Sep; 18(9):6602-6605. PubMed ID: 29677842
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions.
    Woo SY; Yoon YJ; Cho S; Lee JH; Kang IM
    J Nanosci Nanotechnol; 2013 Dec; 13(12):8133-6. PubMed ID: 24266205
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor.
    Singh S; Agnihotri SK; Bagga N; Samajdar DP
    ACS Appl Bio Mater; 2024 Feb; 7(2):812-826. PubMed ID: 38230896
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET.
    Chong C; Liu H; Du S; Wang S; Zhang H
    Nanomaterials (Basel); 2023 Jan; 13(3):. PubMed ID: 36770492
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.