These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

133 related articles for article (PubMed ID: 35208372)

  • 1. SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss.
    Ran S; Huang Z; Hu S; Yang H
    Micromachines (Basel); 2022 Feb; 13(2):. PubMed ID: 35208372
    [TBL] [Abstract][Full Text] [Related]  

  • 2. SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode.
    Deng X; Liu R; Li S; Li L; Wu H; Li X
    Materials (Basel); 2021 Nov; 14(22):. PubMed ID: 34832495
    [TBL] [Abstract][Full Text] [Related]  

  • 3. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics.
    Na J; Cheon J; Kim K
    Materials (Basel); 2021 Jun; 14(13):. PubMed ID: 34202093
    [TBL] [Abstract][Full Text] [Related]  

  • 4. TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode.
    Wang R; Guo J; Liu C; Wu H; Huang Z; Hu S
    Micromachines (Basel); 2022 Oct; 13(10):. PubMed ID: 36296094
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.
    Wei Z; Fu H; Yan X; Li S; Zhang L; Wei J; Liu S; Sun W; Wu W; Bai S
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057175
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Normally-off β-Ga
    Jang CH; Atmaca G; Cha HY
    Micromachines (Basel); 2022 Jul; 13(8):. PubMed ID: 36014107
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET.
    Li H; Yu R; Zhong Y; Yao R; Liao X; Chen X
    Micromachines (Basel); 2019 May; 10(5):. PubMed ID: 31083371
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress.
    Qin H; Ba Z; Xie S; Zhang Z; Chen W; Xun Q
    Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984912
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein.
    Park KY; Kim MS; Choi SY
    Biosens Bioelectron; 2005 Apr; 20(10):2111-5. PubMed ID: 15741082
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss.
    Mao HK; Wang Y; Wu X; Su FW
    Micromachines (Basel); 2019 Nov; 10(12):. PubMed ID: 31779077
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction.
    Zhang L; Liu Y; Fang J; Liu Y
    Micromachines (Basel); 2022 Oct; 13(10):. PubMed ID: 36296123
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer.
    Wang Z; Yuan Z; Zhou X; Qiao M; Li Z; Zhang B
    Nanoscale Res Lett; 2019 Jan; 14(1):38. PubMed ID: 30689063
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures.
    Chen CY; Lai YK; Lee KY; Huang CF; Huang SY
    Micromachines (Basel); 2021 Jun; 12(7):. PubMed ID: 34198997
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions.
    Zou Y; Wang J; Xu H; Wang H
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057316
    [TBL] [Abstract][Full Text] [Related]  

  • 15. New Power MOSFET with Beyond-1D-Limit
    Zhang M; Li B; Wei J
    Materials (Basel); 2020 Jun; 13(11):. PubMed ID: 32516987
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.
    Zhu S; Liu T; Fan J; Maddi HLR; White MH; Agarwal AK
    Materials (Basel); 2022 Aug; 15(17):. PubMed ID: 36079378
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction.
    Sun T; Luo X; Wei J; Yang K; Deng S; Zhao Z; Jia Y; Zhang B
    Nanoscale Res Lett; 2022 Aug; 17(1):78. PubMed ID: 36001155
    [TBL] [Abstract][Full Text] [Related]  

  • 18. On-Chip Gate Electrostatic Discharge Protection Design for 900 V Power Metal Oxide Semiconductor Field Effect Transistor Using Punch-Through Diode Without Degrading Switching Loss.
    Kim S; Kyoung S
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6781-6784. PubMed ID: 31027029
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Development of compact inductive energy storage pulsed-power generator driven by 13 kV SiC-MOSFET.
    Takahashi K; Saito R; Onodera T; Takaki K; Kitai H; Sakamoto K
    Rev Sci Instrum; 2021 Jun; 92(6):064706. PubMed ID: 34243522
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La
    Gowthaman N; Srivastava VM
    Nanomaterials (Basel); 2022 Sep; 12(19):. PubMed ID: 36234508
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.