149 related articles for article (PubMed ID: 35230527)
1. Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED.
Park J; Baek W; Geum DM; Kim S
Nanoscale Res Lett; 2022 Mar; 17(1):29. PubMed ID: 35230527
[TBL] [Abstract][Full Text] [Related]
2. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments.
Wong MS; Kearns JA; Lee C; Smith JM; Lynsky C; Lheureux G; Choi H; Kim J; Kim C; Nakamura S; Speck JS; DenBaars SP
Opt Express; 2020 Feb; 28(4):5787-5793. PubMed ID: 32121793
[TBL] [Abstract][Full Text] [Related]
3. Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs.
Huang W; Miao X; Liu Z
Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984972
[TBL] [Abstract][Full Text] [Related]
4. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition.
Wong MS; Hwang D; Alhassan AI; Lee C; Ley R; Nakamura S; DenBaars SP
Opt Express; 2018 Aug; 26(16):21324-21331. PubMed ID: 30119435
[TBL] [Abstract][Full Text] [Related]
5. Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.
Chen D; Wang Z; Hu FC; Shen C; Chi N; Liu W; Zhang DW; Lu HL
Opt Express; 2021 Oct; 29(22):36559-36566. PubMed ID: 34809064
[TBL] [Abstract][Full Text] [Related]
6. Increase in the efficiency of III-nitride micro LEDs by atomic layer deposition.
Lee TY; Huang YM; Chiang H; Chao CL; Hung CY; Kuo WH; Fang YH; Chu MT; Wu CI; Lin CC; Kuo HC
Opt Express; 2022 May; 30(11):18552-18561. PubMed ID: 36221654
[TBL] [Abstract][Full Text] [Related]
7. Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation.
Zhu Z; Tao T; Liu B; Zhi T; Chen Y; Yu J; Jiang D; Xu F; Sang Y; Yan Y; Xie Z; Zhang R
Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677072
[TBL] [Abstract][Full Text] [Related]
8. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures.
Oh JT; Lee SY; Moon YT; Moon JH; Park S; Hong KY; Song KY; Oh C; Shim JI; Jeong HH; Song JO; Amano H; Seong TY
Opt Express; 2018 Apr; 26(9):11194-11200. PubMed ID: 29716043
[TBL] [Abstract][Full Text] [Related]
9. Enhanced light extraction efficiency of GaN-based green micro-LED modulating by a thickness-tunable SiO
Yan X; Hu X; Zhou R; Gao N; Yao Y; Gao Y; Kang J
Opt Express; 2023 Nov; 31(24):39717-39726. PubMed ID: 38041287
[TBL] [Abstract][Full Text] [Related]
10. Study on the effect of size on InGaN red micro-LEDs.
Horng RH; Ye CX; Chen PW; Iida D; Ohkawa K; Wu YR; Wuu DS
Sci Rep; 2022 Jan; 12(1):1324. PubMed ID: 35079062
[TBL] [Abstract][Full Text] [Related]
11. Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing.
Cui S; Shi L; Jin L; Zhou Q; Sun Y; Jin C; Hu J; Wen K; Xu Z; Zhou S
Opt Lett; 2024 Mar; 49(6):1449-1452. PubMed ID: 38489422
[TBL] [Abstract][Full Text] [Related]
12. Highly efficient blue InGaN nanoscale light-emitting diodes.
Sheen M; Ko Y; Kim DU; Kim J; Byun JH; Choi Y; Ha J; Yeon KY; Kim D; Jung J; Choi J; Kim R; Yoo J; Kim I; Joo C; Hong N; Lee J; Jeon SH; Oh SH; Lee J; Ahn N; Lee C
Nature; 2022 Aug; 608(7921):56-61. PubMed ID: 35922503
[TBL] [Abstract][Full Text] [Related]
13. Efficiency improvement by using metal-insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes.
Yin J; Hwang D; Siboni HZ; Fathi E; Chaji R; Ban D
Front Optoelectron; 2024 Mar; 17(1):8. PubMed ID: 38546801
[TBL] [Abstract][Full Text] [Related]
14. Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall.
Tian M; Yu H; Memon MH; Xing Z; Huang C; Jia H; Zhang H; Wang D; Fang S; Sun H
Opt Lett; 2021 Oct; 46(19):4809-4812. PubMed ID: 34598205
[TBL] [Abstract][Full Text] [Related]
15. Etching-free pixel definition in InGaN green micro-LEDs.
Liu Z; Lu Y; Cao H; Maciel Garcia GI; Liu T; Tang X; Xiao N; Aguileta Vazquez R; Nong M; Li X
Light Sci Appl; 2024 May; 13(1):117. PubMed ID: 38782914
[TBL] [Abstract][Full Text] [Related]
16. Analysis of size-dependent optoelectronic properties of red AlGaInP micro-LEDs.
Fan K; Zheng K; Lv J; Zhao B; Zhao Y; Chen Y; Qin Y; Wang Q; Wang W; Liang J
Opt Express; 2023 Oct; 31(22):36293-36303. PubMed ID: 38017784
[TBL] [Abstract][Full Text] [Related]
17. Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes.
Hussain L; Karimi M; Berg A; Jain V; Borgström MT; Gustafsson A; Samuelson L; Pettersson H
Nanotechnology; 2017 Dec; 28(48):485205. PubMed ID: 28980532
[TBL] [Abstract][Full Text] [Related]
18. Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodes.
Hang S; Zhang M; Zhang Y; Chu C; Zhang Y; Zheng Q; Li Q; Zhang ZH
Opt Express; 2021 Sep; 29(20):31201-31211. PubMed ID: 34615218
[TBL] [Abstract][Full Text] [Related]
19. Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process.
Jung BO; Lee W; Kim J; Choi M; Shin HY; Joo M; Jung S; Choi YH; Kim MJ
Sci Rep; 2021 Feb; 11(1):4535. PubMed ID: 33633206
[TBL] [Abstract][Full Text] [Related]
20. AC-driven multicolor electroluminescence from a hybrid WSe
Chang YH; Lin YS; James Singh K; Lin HT; Chang CY; Chen ZZ; Zhang YW; Lin SY; Kuo HC; Shih MH
Nanoscale; 2023 Jan; 15(3):1347-1356. PubMed ID: 36562246
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
