These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
156 related articles for article (PubMed ID: 35269230)
1. Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon. Du Y; Xu B; Wang G; Miao Y; Li B; Kong Z; Dong Y; Wang W; Radamson HH Nanomaterials (Basel); 2022 Feb; 12(5):. PubMed ID: 35269230 [TBL] [Abstract][Full Text] [Related]
2. Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates. Yang J; Li K; Jia H; Deng H; Yu X; Jurczak P; Park JS; Pan S; Li W; Chen S; Seeds A; Tang M; Liu H Nanoscale; 2022 Dec; 14(46):17247-17253. PubMed ID: 36374132 [TBL] [Abstract][Full Text] [Related]
3. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. Niu G; Capellini G; Hatami F; Di Bartolomeo A; Niermann T; Hussein EH; Schubert MA; Krause HM; Zaumseil P; Skibitzki O; Lupina G; Masselink WT; Lehmann M; Xie YH; Schroeder T ACS Appl Mater Interfaces; 2016 Oct; 8(40):26948-26955. PubMed ID: 27642767 [TBL] [Abstract][Full Text] [Related]
5. Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration. Holland M; van Dal M; Duriez B; Oxland R; Vellianitis G; Doornbos G; Afzalian A; Chen TK; Hsieh CH; Ramvall P; Vasen T; Yeo YC; Passlack M Sci Rep; 2017 Nov; 7(1):14632. PubMed ID: 29116157 [TBL] [Abstract][Full Text] [Related]
6. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed. Renard C; Molière T; Cherkashin N; Alvarez J; Vincent L; Jaffré A; Hallais G; Connolly JP; Mencaraglia D; Bouchier D Sci Rep; 2016 May; 6():25328. PubMed ID: 27142097 [TBL] [Abstract][Full Text] [Related]
7. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si. Tanaka A; Choi W; Chen R; Dayeh SA Adv Mater; 2017 Oct; 29(38):. PubMed ID: 28833605 [TBL] [Abstract][Full Text] [Related]
8. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition. Megalini L; Šuran Brunelli ST; Charles WO; Taylor A; Isaac B; Bowers JE; Klamkin J Materials (Basel); 2018 Feb; 11(3):. PubMed ID: 29495381 [TBL] [Abstract][Full Text] [Related]
9. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration. Cariou R; Chen W; Maurice JL; Yu J; Patriarche G; Mauguin O; Largeau L; Decobert J; Roca I Cabarrocas P Sci Rep; 2016 May; 6():25674. PubMed ID: 27166163 [TBL] [Abstract][Full Text] [Related]
10. Unconventional growth mechanism for monolithic integration of III-V on silicon. Ng KW; Ko WS; Tran TT; Chen R; Nazarenko MV; Lu F; Dubrovskii VG; Kamp M; Forchel A; Chang-Hasnain CJ ACS Nano; 2013 Jan; 7(1):100-7. PubMed ID: 23240995 [TBL] [Abstract][Full Text] [Related]
11. Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon. Wirths S; Mayer BF; Schmid H; Sousa M; Gooth J; Riel H; Moselund KE ACS Nano; 2018 Mar; 12(3):2169-2175. PubMed ID: 29365252 [TBL] [Abstract][Full Text] [Related]
12. Uprooting defects to enable high-performance III-V optoelectronic devices on silicon. Bioud YA; Boucherif A; Myronov M; Soltani A; Patriarche G; Braidy N; Jellite M; Drouin D; Arès R Nat Commun; 2019 Sep; 10(1):4322. PubMed ID: 31541107 [TBL] [Abstract][Full Text] [Related]
13. Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism. Yao M; Sheng C; Ge M; Chi CY; Cong S; Nakano A; Dapkus PD; Zhou C ACS Nano; 2016 Feb; 10(2):2424-35. PubMed ID: 26831573 [TBL] [Abstract][Full Text] [Related]
14. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications. Geum DM; Park MS; Lim JY; Yang HD; Song JD; Kim CZ; Yoon E; Kim S; Choi WJ Sci Rep; 2016 Feb; 6():20610. PubMed ID: 26864968 [TBL] [Abstract][Full Text] [Related]
15. Graphene-Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy. Boucherif AR; Boucherif A; Kolhatkar G; Ruediger A; Arès R Small; 2017 May; 13(18):. PubMed ID: 28296038 [TBL] [Abstract][Full Text] [Related]
16. Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth. Steidl M; Koppka C; Winterfeld L; Peh K; Galiana B; Supplie O; Kleinschmidt P; Runge E; Hannappel T ACS Nano; 2017 Sep; 11(9):8679-8689. PubMed ID: 28881138 [TBL] [Abstract][Full Text] [Related]
17. III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template. Hu Y; Liang D; Mukherjee K; Li Y; Zhang C; Kurczveil G; Huang X; Beausoleil RG Light Sci Appl; 2019; 8():93. PubMed ID: 31645936 [TBL] [Abstract][Full Text] [Related]
18. Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO Besancon C; Fournel F; Sanchez L; Vaissiere N; Dupré C; Le Goec JP; Muffato V; Jany C; Bassani F; David S; Baron T; Decobert J Nanotechnology; 2020 Mar; 31(13):135205. PubMed ID: 31778988 [TBL] [Abstract][Full Text] [Related]
19. Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate. Tran BT; Hirayama H Sci Rep; 2017 Sep; 7(1):12176. PubMed ID: 28939802 [TBL] [Abstract][Full Text] [Related]