These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

189 related articles for article (PubMed ID: 35273177)

  • 1. An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devices.
    Alhasani R; Yabe T; Iyama Y; Oi N; Imanishi S; Nguyen QN; Kawarada H
    Sci Rep; 2022 Mar; 12(1):4203. PubMed ID: 35273177
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications.
    Kawarada H; Yamada T; Xu D; Tsuboi H; Kitabayashi Y; Matsumura D; Shibata M; Kudo T; Inaba M; Hiraiwa A
    Sci Rep; 2017 Feb; 7():42368. PubMed ID: 28218234
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate.
    Chen G; Wang W; Lin F; Zhang M; Wei Q; Yu C; Wang H
    Materials (Basel); 2022 Mar; 15(7):. PubMed ID: 35407888
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.
    Matsumoto T; Kato H; Oyama K; Makino T; Ogura M; Takeuchi D; Inokuma T; Tokuda N; Yamasaki S
    Sci Rep; 2016 Aug; 6():31585. PubMed ID: 27545201
    [TBL] [Abstract][Full Text] [Related]  

  • 5. HfAlO
    Zhang M; Lin F; Wang W; Wen F; Chen G; He S; Wang Y; Fan S; Bu R; Wang H
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057163
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnO
    He S; Wang Y; Chen G; Wang J; Li Q; Zhang Q; Wang R; Zhang M; Wang W; Wang H
    Materials (Basel); 2022 Jul; 15(14):. PubMed ID: 35888549
    [TBL] [Abstract][Full Text] [Related]  

  • 7. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.
    Zhang K; Sumiya M; Liao M; Koide Y; Sang L
    Sci Rep; 2016 Mar; 6():23683. PubMed ID: 27021054
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors.
    Oi N; Inaba M; Okubo S; Tsuyuzaki I; Kageura T; Onoda S; Hiraiwa A; Kawarada H
    Sci Rep; 2018 Jul; 8(1):10660. PubMed ID: 30006560
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Theoretical Insight into the Band Alignment at High-κ Oxide XO
    Cheng C; Sun X; Gui Q; Wu G; Shen W; Dong F; Liu Y; Robertson J; Zhang Z; Guo Y; Liu S
    ACS Appl Mater Interfaces; 2024 May; 16(19):25581-25588. PubMed ID: 38708910
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications.
    Paramasivam P; Gowthaman N; Srivastava VM
    Recent Pat Nanotechnol; 2024; 18(3):335-349. PubMed ID: 37723950
    [TBL] [Abstract][Full Text] [Related]  

  • 11. An Overview of High-
    Liu J; Koide Y
    Sensors (Basel); 2018 Jun; 18(6):. PubMed ID: 29867032
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Accurate Threshold Voltage Reliability Evaluation of Thin Al
    Goyal N; Parihar N; Jawa H; Mahapatra S; Lodha S
    ACS Appl Mater Interfaces; 2019 Jul; 11(26):23673-23680. PubMed ID: 31252490
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Capacitance-voltage analysis of electrical properties for WSe
    Ko SP; Shin JM; Jang HK; You MY; Jin JE; Choi M; Cho J; Kim GT
    Nanotechnology; 2018 Feb; 29(6):065703. PubMed ID: 29239861
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Surface channel MESFETs on hydrogenated diamond.
    Conte G; Giovine E; Bolshakov A; Ralchenko V; Konov V
    Nanotechnology; 2012 Jan; 23(2):025201. PubMed ID: 22166514
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Normally-off β-Ga
    Jang CH; Atmaca G; Cha HY
    Micromachines (Basel); 2022 Jul; 13(8):. PubMed ID: 36014107
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS
    Cho Y; Park JH; Kim M; Jeong Y; Yu S; Lim JY; Yi Y; Im S
    Nano Lett; 2019 Apr; 19(4):2456-2463. PubMed ID: 30855970
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Design and fabrication of high-performance diamond triple-gate field-effect transistors.
    Liu J; Ohsato H; Wang X; Liao M; Koide Y
    Sci Rep; 2016 Oct; 6():34757. PubMed ID: 27708372
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors.
    Im KS; Reddy MSP; Choi J; Hwang Y; Roh JS; An SJ; Lee JH
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4282-4286. PubMed ID: 31968458
    [TBL] [Abstract][Full Text] [Related]  

  • 19. High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.
    Liao M; Sun H; Koizumi S
    Adv Sci (Weinh); 2024 Apr; 11(13):e2306013. PubMed ID: 38243629
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors.
    Arnold AJ; Schulman DS; Das S
    ACS Nano; 2020 Oct; 14(10):13557-13568. PubMed ID: 33026795
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.