These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

214 related articles for article (PubMed ID: 35274929)

  • 1. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
    Zhang Y; He G; Wang L; Wang W; Xu X; Liu W
    ACS Nano; 2022 Mar; 16(3):4961-4971. PubMed ID: 35274929
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
    Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.
    Park JW; Tak YJ; Na JW; Lee H; Kim WG; Kim HJ
    ACS Appl Mater Interfaces; 2018 May; 10(19):16613-16622. PubMed ID: 29682960
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO
    Zhang W; Fan Z; Shen A; Dong C
    Micromachines (Basel); 2021 Dec; 12(12):. PubMed ID: 34945401
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O
    Liu WS; Hsu CH; Jiang Y; Lai YC; Kuo HC
    Membranes (Basel); 2021 Dec; 12(1):. PubMed ID: 35054574
    [TBL] [Abstract][Full Text] [Related]  

  • 6. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al
    Shao Y; Wu X; Zhang MN; Liu WJ; Ding SJ
    Nanoscale Res Lett; 2019 Apr; 14(1):122. PubMed ID: 30941527
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
    Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS
    Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.
    Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ
    ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters.
    He G; Li W; Sun Z; Zhang M; Chen X
    RSC Adv; 2018 Oct; 8(64):36584-36595. PubMed ID: 35558955
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y; Xie H; Dong C
    Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
    [TBL] [Abstract][Full Text] [Related]  

  • 11. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
    Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
    J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.
    Liu J; Guo J; Yang W; Wang C; Yuan B; Liu J; Wu Z; Zhang Q; Liu D; Chen H; Yu Y; Liu S; Shao G; Yao Z
    ACS Appl Mater Interfaces; 2020 Sep; 12(39):43950-43957. PubMed ID: 32886486
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
    Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
    ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.
    Benwadih M; Coppard R; Bonrad K; Klyszcz A; Vuillaume D
    ACS Appl Mater Interfaces; 2016 Dec; 8(50):34513-34519. PubMed ID: 27998139
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
    Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
    [TBL] [Abstract][Full Text] [Related]  

  • 16. As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability.
    Bae J; Ali A; Islam MM; Jeong M; Park C; Jang J
    ACS Appl Mater Interfaces; 2023 Aug; 15(33):39494-39504. PubMed ID: 37561400
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgO
    Kim MS; Kim HT; Jung S; Kim YW; Lee S; Kim HJ
    ACS Appl Mater Interfaces; 2024 Aug; 16(31):41127-41133. PubMed ID: 39058501
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.
    Kim YK; Ahn CH; Yun MG; Cho SW; Kang WJ; Cho HK
    Sci Rep; 2016 May; 6():26287. PubMed ID: 27198067
    [TBL] [Abstract][Full Text] [Related]  

  • 19. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
    Wu CH; Chang KM; Chen YM; Zhang YX; Cheng CY
    J Nanosci Nanotechnol; 2019 Apr; 19(4):2189-2192. PubMed ID: 30486965
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH; Cho WJ
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.