These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

136 related articles for article (PubMed ID: 35288987)

  • 1. Ultrahigh-Speed In-Memory Electronics Enabled by Proximity-Oxidation-Evolved Metal Oxide Redox Transistors.
    Kumar M; Kim U; Lee W; Seo H
    Adv Mater; 2022 May; 34(20):e2200122. PubMed ID: 35288987
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Switchable Polar Nanotexture in Nanolaminates HfO
    Kumar M; Han SI; Ahn Y; Jeon Y; Park J; Seo H
    Small; 2023 Jun; 19(25):e2206736. PubMed ID: 36929621
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer.
    Li Y; Zhang ZC; Li J; Chen XD; Kong Y; Wang FD; Zhang GX; Lu TB; Zhang J
    Nat Commun; 2022 Aug; 13(1):4591. PubMed ID: 35933437
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Graphene oxide thin films for flexible nonvolatile memory applications.
    Jeong HY; Kim JY; Kim JW; Hwang JO; Kim JE; Lee JY; Yoon TH; Cho BJ; Kim SO; Ruoff RS; Choi SY
    Nano Lett; 2010 Nov; 10(11):4381-6. PubMed ID: 20919689
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights.
    Halter M; Bégon-Lours L; Bragaglia V; Sousa M; Offrein BJ; Abel S; Luisier M; Fompeyrine J
    ACS Appl Mater Interfaces; 2020 Apr; 12(15):17725-17732. PubMed ID: 32192333
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.
    Yang YC; Pan F; Liu Q; Liu M; Zeng F
    Nano Lett; 2009 Apr; 9(4):1636-43. PubMed ID: 19271714
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.
    Han ST; Zhou Y; Chen B; Wang C; Zhou L; Yan Y; Zhuang J; Sun Q; Zhang H; Roy VA
    Small; 2016 Jan; 12(3):390-6. PubMed ID: 26578160
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Logic-in-memory based on an atomically thin semiconductor.
    Migliato Marega G; Zhao Y; Avsar A; Wang Z; Tripathi M; Radenovic A; Kis A
    Nature; 2020 Nov; 587(7832):72-77. PubMed ID: 33149289
    [TBL] [Abstract][Full Text] [Related]  

  • 9. A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors.
    Zhang Z; Luo Y; Cui Y; Yang H; Zhang Q; Xu G; Wu Z; Xiang J; Liu Q; Yin H; Mao S; Wang X; Li J; Zhang Y; Luo Q; Gao J; Xiong W; Liu J; Li Y; Li J; Luo J; Wang W
    ACS Appl Mater Interfaces; 2022 Feb; 14(5):6967-6976. PubMed ID: 35076195
    [TBL] [Abstract][Full Text] [Related]  

  • 10. One-Transistor-One-Transistor (1T1T) Optoelectronic Nonvolatile MoS
    Lee D; Kim S; Kim Y; Cho JH
    ACS Appl Mater Interfaces; 2017 Aug; 9(31):26357-26362. PubMed ID: 28707472
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate.
    Jin R; Shi K; Qiu B; Huang S
    Nanotechnology; 2021 Oct; 33(2):. PubMed ID: 34619668
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Neuromorphic Photonic Memory Devices Using Ultrafast, Non-Volatile Phase-Change Materials.
    Chen X; Xue Y; Sun Y; Shen J; Song S; Zhu M; Song Z; Cheng Z; Zhou P
    Adv Mater; 2023 Sep; 35(37):e2203909. PubMed ID: 35713563
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices.
    Zahari F; Pérez E; Mahadevaiah MK; Kohlstedt H; Wenger C; Ziegler M
    Sci Rep; 2020 Sep; 10(1):14450. PubMed ID: 32879397
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli.
    Sun Q; Ho DH; Choi Y; Pan C; Kim DH; Wang ZL; Cho JH
    ACS Nano; 2016 Dec; 10(12):11037-11043. PubMed ID: 27935289
    [TBL] [Abstract][Full Text] [Related]  

  • 15. SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices.
    Kingra SK; Parmar V; Chang CC; Hudec B; Hou TH; Suri M
    Sci Rep; 2020 Feb; 10(1):2567. PubMed ID: 32054872
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Light-Gated Memristor with Integrated Logic and Memory Functions.
    Tan H; Liu G; Yang H; Yi X; Pan L; Shang J; Long S; Liu M; Wu Y; Li RW
    ACS Nano; 2017 Nov; 11(11):11298-11305. PubMed ID: 29028312
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Nonvolatile Logic and Ternary Content-Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors.
    Xiong X; Kang J; Liu S; Tong A; Fu T; Li X; Huang R; Wu Y
    Adv Mater; 2022 Dec; 34(48):e2106321. PubMed ID: 34779068
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Li-Ion Synaptic Transistor for Low Power Analog Computing.
    Fuller EJ; Gabaly FE; Léonard F; Agarwal S; Plimpton SJ; Jacobs-Gedrim RB; James CD; Marinella MJ; Talin AA
    Adv Mater; 2017 Jan; 29(4):. PubMed ID: 27874238
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence.
    Wang J; Zhuge X; Zhuge F
    Sci Technol Adv Mater; 2021 May; 22(1):326-344. PubMed ID: 34025215
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Nonvolatile ferroelectric field-effect transistors.
    Chai X; Jiang J; Zhang Q; Hou X; Meng F; Wang J; Gu L; Zhang DW; Jiang AQ
    Nat Commun; 2020 Jun; 11(1):2811. PubMed ID: 32499502
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.