These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
140 related articles for article (PubMed ID: 35289446)
1. A Robust Memristor Based on Epitaxial Vertically Aligned Nanostructured BaTiO Yan X; He H; Liu G; Zhao Z; Pei Y; Liu P; Zhao J; Zhou Z; Wang K; Yan H Adv Mater; 2022 Jun; 34(23):e2110343. PubMed ID: 35289446 [TBL] [Abstract][Full Text] [Related]
2. Ferroelectric properties of vertically aligned nanostructured BaTiO3-CeO2 thin films and their integration on silicon. Khatkhatay F; Chen A; Lee JH; Zhang W; Abdel-Raziq H; Wang H ACS Appl Mater Interfaces; 2013 Dec; 5(23):12541-7. PubMed ID: 24266680 [TBL] [Abstract][Full Text] [Related]
3. Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO Gómez A; Vila-Fungueiriño JM; Moalla R; Saint-Girons G; Gázquez J; Varela M; Bachelet R; Gich M; Rivadulla F; Carretero-Genevrier A Small; 2017 Oct; 13(39):. PubMed ID: 28809085 [TBL] [Abstract][Full Text] [Related]
4. Silicon based Bi Liu G; Wang W; Guo Z; Jia X; Zhao Z; Zhou Z; Niu J; Duan G; Yan X Nanoscale; 2023 Aug; 15(31):13009-13017. PubMed ID: 37485606 [TBL] [Abstract][Full Text] [Related]
5. Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses. Wang G; Sun F; Zhou S; Zhang Y; Zhang F; Wang H; Huang J; Zheng Y ACS Appl Mater Interfaces; 2024 Mar; 16(9):12073-12084. PubMed ID: 38381527 [TBL] [Abstract][Full Text] [Related]
6. A review of molecular beam epitaxy of ferroelectric BaTiO Mazet L; Yang SM; Kalinin SV; Schamm-Chardon S; Dubourdieu C Sci Technol Adv Mater; 2015 Jun; 16(3):036005. PubMed ID: 27877816 [TBL] [Abstract][Full Text] [Related]
8. Ferroelectricity-Defects Synergistic Artificial Synapses for High Recognition Accuracy Neuromorphic Computing. Dong S; Liu H; Wang Y; Bian J; Su J ACS Appl Mater Interfaces; 2024 Apr; 16(15):19235-19246. PubMed ID: 38584351 [TBL] [Abstract][Full Text] [Related]
9. Synaptic and Gradual Conductance Switching Behaviors in CeO Li H; Geng S; Liu T; Cao M; Su J ACS Appl Mater Interfaces; 2023 Feb; 15(4):5456-5465. PubMed ID: 36662834 [TBL] [Abstract][Full Text] [Related]
10. High-Performance Neuromorphic Computing and Logic Operation Based on a Self-Assembled Vertically Aligned Nanocomposite SrTiO Guo Z; Liu G; Sun Y; Zhang Y; Zhao J; Liu P; Wang H; Zhou Z; Zhao Z; Jia X; Sun J; Shao Y; Han X; Zhang Z; Yan X ACS Nano; 2023 Nov; 17(21):21518-21530. PubMed ID: 37897737 [TBL] [Abstract][Full Text] [Related]
11. Superlow Power Consumption Artificial Synapses Based on WSe Wang Z; Wang W; Liu P; Liu G; Li J; Zhao J; Zhou Z; Wang J; Pei Y; Zhao Z; Li J; Wang L; Jian Z; Wang Y; Guo J; Yan X Research (Wash D C); 2022; 2022():9754876. PubMed ID: 36204247 [TBL] [Abstract][Full Text] [Related]
12. Epitaxial Integration on Si(001) of Ferroelectric Hf Lyu J; Fina I; Fontcuberta J; Sánchez F ACS Appl Mater Interfaces; 2019 Feb; 11(6):6224-6229. PubMed ID: 30657323 [TBL] [Abstract][Full Text] [Related]
13. Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors. Wang P; Wang D; Mondal S; Hu M; Wu Y; Ma T; Mi Z ACS Appl Mater Interfaces; 2023 Apr; 15(14):18022-18031. PubMed ID: 36975150 [TBL] [Abstract][Full Text] [Related]
14. High-Speed Switching and Giant Electroresistance in an Epitaxial Hf Du X; Sun H; Wang H; Li J; Yin Y; Li X ACS Appl Mater Interfaces; 2022 Jan; 14(1):1355-1361. PubMed ID: 34958206 [TBL] [Abstract][Full Text] [Related]
16. Effect of growth temperature on self-rectifying BaTiO Patil H; Rehman S; Kim H; Kadam KD; Khan MA; Khan K; Aziz J; Ismail M; Khan MF; Kim DK J Colloid Interface Sci; 2023 Dec; 652(Pt A):836-844. PubMed ID: 37625358 [TBL] [Abstract][Full Text] [Related]
17. Flexible Memristors Based on Single-Crystalline Ferroelectric Tunnel Junctions. Luo ZD; Peters JJP; Sanchez AM; Alexe M ACS Appl Mater Interfaces; 2019 Jul; 11(26):23313-23319. PubMed ID: 31181153 [TBL] [Abstract][Full Text] [Related]
18. Sub-nanosecond memristor based on ferroelectric tunnel junction. Ma C; Luo Z; Huang W; Zhao L; Chen Q; Lin Y; Liu X; Chen Z; Liu C; Sun H; Jin X; Yin Y; Li X Nat Commun; 2020 Mar; 11(1):1439. PubMed ID: 32188861 [TBL] [Abstract][Full Text] [Related]
19. Self-Organized Epitaxial Vertically Aligned Nanocomposites with Long-Range Ordering Enabled by Substrate Nanotemplating. Fan M; Zhang B; Wang H; Jian J; Sun X; Huang J; Li L; Zhang X; Wang H Adv Mater; 2017 Jun; 29(23):. PubMed ID: 28401590 [TBL] [Abstract][Full Text] [Related]
20. The Role of Ferroelectric Polarization in Resistive Memory Properties of Metal/Insulator/Semiconductor Tunnel Junctions: A Comparative Study. Yang Y; Wu M; Li X; Hu H; Jiang Z; Li Z; Hao X; Zheng C; Lou X; Pennycook SJ; Wen Z ACS Appl Mater Interfaces; 2020 Jul; 12(29):32935-32942. PubMed ID: 32588626 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]