These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

198 related articles for article (PubMed ID: 35329549)

  • 1. Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO
    Jang CH; Kim HS; Kim H; Cha HY
    Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329549
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO
    Choi Y; Han C; Shin J; Moon S; Min J; Park H; Eom D; Lee J; Shin C
    Sensors (Basel); 2022 May; 22(11):. PubMed ID: 35684705
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO
    Choi SN; Moon SE; Yoon SM
    Nanotechnology; 2021 Feb; 32(8):085709. PubMed ID: 33176285
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO
    Ku B; Ma Y; Han H; Xuan W; Choi C
    Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35767964
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Low-Frequency Noise Characteristics in HfO
    Im KS; Shin S; Jang CH; Cha HY
    Materials (Basel); 2022 Oct; 15(21):. PubMed ID: 36363066
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Engineering of Ferroelectric HfO
    Weeks SL; Pal A; Narasimhan VK; Littau KA; Chiang T
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13440-13447. PubMed ID: 28337909
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Improved Ferroelectric Properties in Hf
    Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M
    Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited
    Kim HB; Jung M; Oh Y; Lee SW; Suh D; Ahn JH
    Nanoscale; 2021 May; 13(18):8524-8530. PubMed ID: 33908540
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO
    Xi Y; Liu L; Zhao J; Qin X; Zhang J; Zhang C; Liu W
    Materials (Basel); 2023 Aug; 16(16):. PubMed ID: 37629850
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Enhanced polarization and endurance properties of ZrO
    Zhang W; Shi Y; Zhang B; Liu Z; Cao Y; Pan T; Li Y
    Nanotechnology; 2024 Aug; 35(43):. PubMed ID: 39074487
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Structural, Optical and Electrical Properties of HfO
    Kim KM; Jang JS; Yoon SG; Yun JY; Chung NK
    Materials (Basel); 2020 Apr; 13(9):. PubMed ID: 32344793
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO
    Yeom MJ; Yang JY; Lee CH; Heo J; Chung RBK; Yoo G
    Micromachines (Basel); 2021 Nov; 12(12):. PubMed ID: 34945290
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys.
    Yu Z; Saini B; Liu Y; Huang F; Mehta A; Baniecki JD; Wong HP; Tsai W; McIntyre PC
    ACS Appl Mater Interfaces; 2022 Nov; 14(47):53057-53064. PubMed ID: 36384298
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO
    Kim J; Kwon O; Lim E; Kim D; Kim S
    Phys Chem Chem Phys; 2023 Feb; 25(6):4588-4597. PubMed ID: 36723041
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effect of a ZrO
    Song JN; Oh MJ; Yoon CB
    Materials (Basel); 2023 Feb; 16(5):. PubMed ID: 36903074
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Domain Switching Characteristics in Ga-Doped HfO
    Li YC; Huang T; Li XX; Zhu XN; Zhang DW; Lu HL
    Nano Lett; 2024 Jun; 24(22):6585-6591. PubMed ID: 38785400
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.
    Kang YS; Kim DK; Jeong KS; Cho MH; Kim CY; Chung KB; Kim H; Kim DC
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):1982-9. PubMed ID: 23438318
    [TBL] [Abstract][Full Text] [Related]  

  • 18. HfO
    Kang M; Peng Y; Xiao W; Zhang Y; Wang Z; Du P; Jiang H; Liu F; Liu Y; Hao Y; Han G
    ACS Appl Mater Interfaces; 2024 Jan; 16(2):2954-2963. PubMed ID: 38166401
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films.
    Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
    ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Tunable Microwave Filters Using HfO
    Aldrigo M; Dragoman M; Iordanescu S; Nastase F; Vulpe S
    Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33081017
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.