These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
44. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy. Morales-Cortés H; Mejía-García C; Méndez-García VH; Vázquez-Cortés D; Rojas-Ramírez JS; Contreras-Guerrero R; Ramírez-López M; Martínez-Velis I; López-López M Nanotechnology; 2010 Apr; 21(13):134012. PubMed ID: 20208110 [TBL] [Abstract][Full Text] [Related]
45. Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique. Shu Q; Huang P; Yang F; Yang L; Chen L Sci Rep; 2023 May; 13(1):7511. PubMed ID: 37161032 [TBL] [Abstract][Full Text] [Related]
46. Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy. Abbarchi M; Mano T; Kuroda T; Ohtake A; Sakoda K Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33578657 [TBL] [Abstract][Full Text] [Related]
47. Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface. Choi I; Lee H; Lee CR; Jeong KU; Kim JS Nanotechnology; 2018 Aug; 29(31):315603. PubMed ID: 29749963 [TBL] [Abstract][Full Text] [Related]
48. Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics. Wen L; Gao F; Zhang S; Li G Small; 2016 Aug; 12(31):4277-85. PubMed ID: 27348495 [TBL] [Abstract][Full Text] [Related]
49. Self-assembled Bismuth Selenide (Bi Claro MS; Levy I; Gangopadhyay A; Smith DJ; Tamargo MC Sci Rep; 2019 Mar; 9(1):3370. PubMed ID: 30833604 [TBL] [Abstract][Full Text] [Related]
50. Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration. Zannier V; Li A; Rossi F; Yadav S; Petersson K; Sorba L Materials (Basel); 2022 Mar; 15(7):. PubMed ID: 35407877 [TBL] [Abstract][Full Text] [Related]
51. Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet. Baik M; Kyhm JH; Kang HK; Jeong KS; Kim JS; Cho MH; Song JD Sci Rep; 2021 Apr; 11(1):7699. PubMed ID: 33833327 [TBL] [Abstract][Full Text] [Related]
52. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate. Shuhui Z; Lu W; Zhenwu S; Yanxiang C; Haitao T; Huaiju G; Haiqiang J; Wenxin W; Hong C; Liancheng Z Nanoscale Res Lett; 2012 Jan; 7(1):87. PubMed ID: 22277096 [TBL] [Abstract][Full Text] [Related]
53. Growth dynamics of InAs/InP nanowire heterostructures by Au-assisted chemical beam epitaxy. Zannier V; Rossi F; Ercolani D; Sorba L Nanotechnology; 2019 Mar; 30(9):094003. PubMed ID: 30537697 [TBL] [Abstract][Full Text] [Related]
54. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Liu G; Zhao H; Zhang J; Park JH; Mawst LJ; Tansu N Nanoscale Res Lett; 2011 Apr; 6(1):342. PubMed ID: 21711862 [TBL] [Abstract][Full Text] [Related]
55. Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography. Martín-Sánchez J; Alonso-González P; Herranz J; González Y; González L Nanotechnology; 2009 Mar; 20(12):125302. PubMed ID: 19420463 [TBL] [Abstract][Full Text] [Related]
56. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition. Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334 [TBL] [Abstract][Full Text] [Related]
57. Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots. Thomas FS; Baumgartner A; Gubser L; Jünger C; Fülöp G; Nilsson M; Rossi F; Zannier V; Sorba L; Schönenberger C Nanotechnology; 2019 Nov; 31(13):135003. PubMed ID: 31778992 [TBL] [Abstract][Full Text] [Related]
58. Computational study on the in-plane symmetry of electron wavefunctions in self-assembled InAs/GaAs quantum dots. Mukai K; Watanabe K; Nakashima K J Nanosci Nanotechnol; 2009 Jan; 9(1):108-14. PubMed ID: 19441284 [TBL] [Abstract][Full Text] [Related]
59. InAs/AlGaAs quantum dots for single-photon emission in a red spectral range. Rakhlin MV; Belyaev KG; Klimko GV; Mukhin IS; Kirilenko DA; Shubina TV; Ivanov SV; Toropov AA Sci Rep; 2018 Mar; 8(1):5299. PubMed ID: 29593301 [TBL] [Abstract][Full Text] [Related]
60. Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm. Liu WS; Tseng HL; Kuo PC Opt Express; 2014 Aug; 22(16):18860-9. PubMed ID: 25320972 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]