These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

142 related articles for article (PubMed ID: 35400694)

  • 21. Accelerated Tests on Si and SiC Power Transistors with Thermal, Fastand Ultra-Fast Neutrons.
    Principato F; Altieri S; Abbene L; Pintacuda F
    Sensors (Basel); 2020 May; 20(11):. PubMed ID: 32466560
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Radiation Response of Negative Gate Biased SiC MOSFETs.
    Takeyama A; Makino T; Okubo S; Tanaka Y; Yoshie T; Hijikata Y; Ohshima T
    Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31461860
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.
    Li F; Roccaforte F; Greco G; Fiorenza P; La Via F; Pérez-Tomas A; Evans JE; Fisher CA; Monaghan FA; Mawby PA; Jennings M
    Materials (Basel); 2021 Oct; 14(19):. PubMed ID: 34640228
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Improved DRUS 4H-SiC MESFET with High Power Added Efficiency.
    Jia H; Liang Y; Li T; Tong Y; Zhu S; Wang X; Zeng T; Yang Y
    Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31892117
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.
    Khediri A; Talbi A; Jaouad A; Maher H; Soltani A
    Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832696
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers.
    Pirnaci MD; Spitaleri L; Tenaglia D; Perricelli F; Fragalà ME; Bongiorno C; Gulino A
    ACS Omega; 2021 Aug; 6(31):20667-20675. PubMed ID: 34396012
    [TBL] [Abstract][Full Text] [Related]  

  • 27. New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors.
    Shih CW; Chin A
    ACS Appl Mater Interfaces; 2016 Aug; 8(30):19187-91. PubMed ID: 27454211
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties.
    Sampayan SE; Grivickas PV; Conway AM; Sampayan KC; Booker I; Bora M; Caporaso GJ; Grivickas V; Nguyen HT; Redeckas K; Schoner A; Voss LF; Vengris M; Wang L
    Sci Rep; 2021 Mar; 11(1):6859. PubMed ID: 33767209
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption.
    Xiao L; Yang X; Duan P; Xu H; Chen X; Hu X; Peng Y; Xu X
    Appl Opt; 2018 Apr; 57(11):2804-2808. PubMed ID: 29714282
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Breakdown Voltage of a Floating Metal Ring Using Mo Metal.
    Nam TJ; Hong YS; Lee MH; Kang TY; Kyoung SS; Kang EG
    J Nanosci Nanotechnol; 2019 Mar; 19(3):1451-1454. PubMed ID: 30469204
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss.
    Mao HK; Wang Y; Wu X; Su FW
    Micromachines (Basel); 2019 Nov; 10(12):. PubMed ID: 31779077
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.
    Matsumoto T; Kato H; Oyama K; Makino T; Ogura M; Takeuchi D; Inokuma T; Tokuda N; Yamasaki S
    Sci Rep; 2016 Aug; 6():31585. PubMed ID: 27545201
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Electron trapping at SiO
    Fiorenza P; Iucolano F; Nicotra G; Bongiorno C; Deretzis I; La Magna A; Giannazzo F; Saggio M; Spinella C; Roccaforte F
    Nanotechnology; 2018 Sep; 29(39):395702. PubMed ID: 29972377
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window.
    Wen Y; Xu XJ; Tao ML; Lu XF; Deng XC; Li X; Li JT; Li ZQ; Zhang B
    Nanoscale Res Lett; 2020 Nov; 15(1):211. PubMed ID: 33170390
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Review of Recent Progress on Vertical GaN-Based PN Diodes.
    Pu T; Younis U; Chiu HC; Xu K; Kuo HC; Liu X
    Nanoscale Res Lett; 2021 Jun; 16(1):101. PubMed ID: 34097144
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Materials and Processes for Schottky Contacts on Silicon Carbide.
    Vivona M; Giannazzo F; Roccaforte F
    Materials (Basel); 2021 Dec; 15(1):. PubMed ID: 35009445
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Transport Characteristics of Interfacial Charge in SiC Semiconductor-Epoxy Resin Packaging Materials.
    Chen C; Li J; Wang X; Wu K; Cheng C; Wang C; Fu Y
    Front Chem; 2022; 10():879438. PubMed ID: 35559221
    [TBL] [Abstract][Full Text] [Related]  

  • 38. A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region.
    Jia H; Dong M; Wang X; Zhu S; Yang Y
    Micromachines (Basel); 2021 Apr; 12(5):. PubMed ID: 33925861
    [TBL] [Abstract][Full Text] [Related]  

  • 39. The Optimal Design of Field Ring for Reliability and Realization of 3.3 kV Insulated-Gate Bipolar Transistor Power Semiconductor.
    Shin MC; Kim HA; Ahn BS; Cui HF; Kim SY; Kang EG
    J Nanosci Nanotechnol; 2019 Mar; 19(3):1720-1723. PubMed ID: 30469253
    [TBL] [Abstract][Full Text] [Related]  

  • 40. High-Q integrated photonic microresonators on 3C-SiC-on-insulator (SiCOI) platform.
    Fan T; Moradinejad H; Wu X; Eftekhar AA; Adibi A
    Opt Express; 2018 Oct; 26(20):25814-25826. PubMed ID: 30469677
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 8.