154 related articles for article (PubMed ID: 35436083)
21. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
Ra HS; Lee AY; Kwak DH; Jeong MH; Lee JS
ACS Appl Mater Interfaces; 2018 Jan; 10(1):925-932. PubMed ID: 29256593
[TBL] [Abstract][Full Text] [Related]
22. Low-Temperature Synthesis of Boron Nitride as a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices.
Lu Z; Zhu M; Liu Y; Zhang G; Tan Z; Li X; Xu S; Wang L; Dou R; Wang B; Yao Y; Zhang Z; Dong J; Cheng Z; Chen S
ACS Appl Mater Interfaces; 2022 Jun; 14(22):25984-25992. PubMed ID: 35604780
[TBL] [Abstract][Full Text] [Related]
23. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe
Saidov K; Razzokov J; Parpiev O; Yüzbasi NS; Kovalska N; Blugan G; Ruzimuradov O
Nanomaterials (Basel); 2023 Sep; 13(18):. PubMed ID: 37764588
[TBL] [Abstract][Full Text] [Related]
24. High mobility field-effect transistors based on MoS
Patil V; Kim J; Agrawal K; Park T; Yi J; Aoki N; Watanabe K; Taniguchi T; Kim GH
Nanotechnology; 2021 May; 32(32):. PubMed ID: 33845468
[TBL] [Abstract][Full Text] [Related]
25. Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN.
Wang JI; Yang Y; Chen YA; Watanabe K; Taniguchi T; Churchill HO; Jarillo-Herrero P
Nano Lett; 2015 Mar; 15(3):1898-903. PubMed ID: 25654184
[TBL] [Abstract][Full Text] [Related]
26. van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices.
Avsar A; Tan JY; Luo X; Khoo KH; Yeo Y; Watanabe K; Taniguchi T; Quek SY; Özyilmaz B
Nano Lett; 2017 Sep; 17(9):5361-5367. PubMed ID: 28792227
[TBL] [Abstract][Full Text] [Related]
27. Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation.
Liu D; Chen X; Yan Y; Zhang Z; Jin Z; Yi K; Zhang C; Zheng Y; Wang Y; Yang J; Xu X; Chen J; Lu Y; Wei D; Wee ATS; Wei D
Nat Commun; 2019 Mar; 10(1):1188. PubMed ID: 30867418
[TBL] [Abstract][Full Text] [Related]
28. High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts.
Chuang HJ; Tan X; Ghimire NJ; Perera MM; Chamlagain B; Cheng MM; Yan J; Mandrus D; Tománek D; Zhou Z
Nano Lett; 2014 Jun; 14(6):3594-601. PubMed ID: 24844426
[TBL] [Abstract][Full Text] [Related]
29. End-Bonded Metal Contacts on WSe
Chu CH; Lin HC; Yeh CH; Liang ZY; Chou MY; Chiu PW
ACS Nano; 2019 Jul; 13(7):8146-8154. PubMed ID: 31244047
[TBL] [Abstract][Full Text] [Related]
30. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.
Lee HS; Baik SS; Lee K; Min SW; Jeon PJ; Kim JS; Choi K; Choi HJ; Kim JH; Im S
ACS Nano; 2015 Aug; 9(8):8312-20. PubMed ID: 26169189
[TBL] [Abstract][Full Text] [Related]
31. Performance limit of all-wrapped monolayer MoS
Zhang W; Liang B; Tang J; Chen J; Wan Q; Shi Y; Li S
Sci Bull (Beijing); 2023 Sep; 68(18):2025-2032. PubMed ID: 37598059
[TBL] [Abstract][Full Text] [Related]
32. Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials.
Bark H; Choi Y; Jung J; Kim JH; Kwon H; Lee J; Lee Z; Cho JH; Lee C
Nanoscale; 2018 Jan; 10(3):1056-1062. PubMed ID: 29266157
[TBL] [Abstract][Full Text] [Related]
33. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.
Heine T
Acc Chem Res; 2015 Jan; 48(1):65-72. PubMed ID: 25489917
[TBL] [Abstract][Full Text] [Related]
34. How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
Yang L; Charnas A; Qiu G; Lin YM; Lu CC; Tsai W; Paduano Q; Snure M; Ye PD
ACS Omega; 2017 Aug; 2(8):4173-4179. PubMed ID: 31457714
[TBL] [Abstract][Full Text] [Related]
35. A "Click" Reaction to Engineer MoS
Miao J; Wu L; Bian Z; Zhu Q; Zhang T; Pan X; Hu J; Xu W; Wang Y; Xu Y; Yu B; Ji W; Zhang X; Qiao J; Samorì P; Zhao Y
ACS Nano; 2022 Dec; 16(12):20647-20655. PubMed ID: 36455073
[TBL] [Abstract][Full Text] [Related]
36. Bridging the gap between atomically thin semiconductors and metal leads.
Cai X; Wu Z; Han X; Chen Y; Xu S; Lin J; Han T; He P; Feng X; An L; Shi R; Wang J; Ying Z; Cai Y; Hua M; Liu J; Pan D; Cheng C; Wang N
Nat Commun; 2022 Apr; 13(1):1777. PubMed ID: 35365627
[TBL] [Abstract][Full Text] [Related]
37. Edge-Contact MoS
Conde-Rubio A; Liu X; Boero G; Brugger J
ACS Appl Mater Interfaces; 2022 Sep; 14(37):42328-42336. PubMed ID: 36070441
[TBL] [Abstract][Full Text] [Related]
38. High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.
Li M; Lin CY; Yang SH; Chang YM; Chang JK; Yang FS; Zhong C; Jian WB; Lien CH; Ho CH; Liu HJ; Huang R; Li W; Lin YF; Chu J
Adv Mater; 2018 Nov; 30(44):e1803690. PubMed ID: 30589465
[TBL] [Abstract][Full Text] [Related]
39. Chemical Synthesis and Integration of Highly Conductive PdTe
Zheng J; Miao T; Xu R; Ping X; Wu Y; Lu Z; Zhang Z; Hu D; Liu L; Zhang Q; Li D; Cheng Z; Ma W; Xie L; Jiao L
Adv Mater; 2021 Jul; 33(27):e2101150. PubMed ID: 34057254
[TBL] [Abstract][Full Text] [Related]
40. Enhanced Electrical Properties of Lithography-Free Fabricated MoS
Yang H; Cai S; Zhang Y; Wu D; Fang X
J Phys Chem Lett; 2021 Mar; 12(11):2705-2711. PubMed ID: 33703909
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]