These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

152 related articles for article (PubMed ID: 35457894)

  • 1. High Selectivity, Low Damage ICP Etching of
    Zhang P; Wang L; Zhu K; Yang Y; Fan R; Pan M; Xu S; Xu M; Wang C; Wu C; Zhang DW
    Micromachines (Basel); 2022 Apr; 13(4):. PubMed ID: 35457894
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance
    Wang L; Zhang P; Zhu K; Wang Q; Pan M; Sun X; Huang Z; Chen K; Yang Y; Xie X; Huang H; Hu X; Xu S; Wu C; Wang C; Xu M; Zhang DW
    Nanomaterials (Basel); 2023 Aug; 13(16):. PubMed ID: 37630860
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application.
    Chang YC; Ho YL; Huang TY; Huang DW; Wu CH
    Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33919816
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effects of Recess Depth Under the Gate Area on the
    Kim ZS; Lee HS; Bae SB; Nam ES; Lim JW
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4170-4175. PubMed ID: 31968436
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
    Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
    Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices.
    Calzolaro A; Mikolajick T; Wachowiak A
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160737
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers.
    Guo H; Li Y; Yu X; Zhou J; Kong Y
    Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144109
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs.
    Ji K; Cui X; Chen J; Guo Q; Jiang B; Wang B; Sun W; Hu W; Hua Q
    Nanotechnology; 2021 Jun; 32(35):. PubMed ID: 34010814
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Improved
    Xie X; Wang Q; Pan M; Zhang P; Wang L; Yang Y; Huang H; Hu X; Xu M
    Nanomaterials (Basel); 2024 Mar; 14(6):. PubMed ID: 38535670
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN
    Gao X; Guo H; Wang R; Pan D; Chen P; Chen D; Lu H; Zhang R; Zheng Y
    Micromachines (Basel); 2022 Aug; 13(9):. PubMed ID: 36144019
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications.
    Liu AC; Tu PT; Chen HC; Lai YY; Yeh PC; Kuo HC
    Micromachines (Basel); 2023 Aug; 14(8):. PubMed ID: 37630118
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic.
    Wu TL; Tang SW; Jiang HJ
    Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32028702
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range.
    Wang S; Zhou Q; Chen K; Bai P; Wang J; Zhu L; Zhou C; Gao W; Zhang B
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057371
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
    Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
    Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate.
    Huang YC; Chiu HC; Kao HL; Wang HC; Liu CH; Huang CR; Chen SW
    Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34062908
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics.
    Sun Y; Kang X; Zheng Y; Wei K; Li P; Wang W; Liu X; Zhang G
    Nanomaterials (Basel); 2020 Apr; 10(4):. PubMed ID: 32244713
    [TBL] [Abstract][Full Text] [Related]  

  • 18. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.
    Liu XY; Zhao SX; Zhang LQ; Huang HF; Shi JS; Zhang CM; Lu HL; Wang PF; Zhang DW
    Nanoscale Res Lett; 2015; 10():109. PubMed ID: 25852404
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.
    Kang SC; Jung HW; Chang SJ; Kim SM; Lee SK; Lee BH; Kim H; Noh YS; Lee SH; Kim SI; Ahn HK; Lim JW
    Nanomaterials (Basel); 2020 Oct; 10(11):. PubMed ID: 33114425
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor.
    Baek SH; Lee GW; Cho CY; Lee SN
    Sci Rep; 2021 Mar; 11(1):7172. PubMed ID: 33785795
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.