BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

146 related articles for article (PubMed ID: 35492438)

  • 1. Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices.
    Güniat L; Tappy N; Balgarkashi A; Charvin T; Lemerle R; Morgan N; Dede D; Kim W; Piazza V; Leran JB; Tizei LHG; Kociak M; Fontcuberta I Morral A
    ACS Appl Nano Mater; 2022 Apr; 5(4):5508-5515. PubMed ID: 35492438
    [TBL] [Abstract][Full Text] [Related]  

  • 2. III-V Integration on Si(100): Vertical Nanospades.
    Güniat L; Martí-Sánchez S; Garcia O; Boscardin M; Vindice D; Tappy N; Friedl M; Kim W; Zamani M; Francaviglia L; Balgarkashi A; Leran JB; Arbiol J; Fontcuberta I Morral A
    ACS Nano; 2019 May; 13(5):5833-5840. PubMed ID: 31038924
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates.
    Dimakis E; Jahn U; Ramsteiner M; Tahraoui A; Grandal J; Kong X; Marquardt O; Trampert A; Riechert H; Geelhaar L
    Nano Lett; 2014 May; 14(5):2604-9. PubMed ID: 24678901
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.
    Shen J; Song Y; Lee ML; Cha JJ
    Nanotechnology; 2014 Nov; 25(46):465702. PubMed ID: 25354930
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires.
    Stettner T; Thurn A; Döblinger M; Hill MO; Bissinger J; Schmiedeke P; Matich S; Kostenbader T; Ruhstorfer D; Riedl H; Kaniber M; Lauhon LJ; Finley JJ; Koblmüller G
    Nano Lett; 2018 Oct; 18(10):6292-6300. PubMed ID: 30185051
    [TBL] [Abstract][Full Text] [Related]  

  • 6. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.
    Bru-Chevallier C; El Akra A; Pelloux-Gervais D; Dumont H; Canut B; Chauvin N; Regreny P; Gendry M; Patriarche G; Jancu JM; Even J; Noe P; Calvo V; Salem B
    J Nanosci Nanotechnol; 2011 Oct; 11(10):9153-9. PubMed ID: 22400316
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices.
    Jeong HW; Ajay A; Döblinger M; Sturm S; Gómez Ruiz M; Zell R; Mukhundhan N; Stelzner D; Lähnemann J; Müller-Caspary K; Finley JJ; Koblmüller G
    ACS Appl Nano Mater; 2024 Feb; 7(3):3032-3041. PubMed ID: 38357219
    [TBL] [Abstract][Full Text] [Related]  

  • 8. One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications-a review.
    Ray SK; Katiyar AK; Raychaudhuri AK
    Nanotechnology; 2017 Mar; 28(9):092001. PubMed ID: 28120815
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy.
    Yang I; Zhang X; Zheng C; Gao Q; Li Z; Li L; Lockrey MN; Nguyen H; Caroff P; Etheridge J; Tan HH; Jagadish C; Wong-Leung J; Fu L
    ACS Nano; 2018 Oct; 12(10):10374-10382. PubMed ID: 30281281
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures.
    Glaser M; Kitzler A; Johannes A; Prucnal S; Potts H; Conesa-Boj S; Filipovic L; Kosina H; Skorupa W; Bertagnolli E; Ronning C; Fontcuberta I Morral A; Lugstein A
    Nano Lett; 2016 Jun; 16(6):3507-13. PubMed ID: 27168031
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers.
    Chen B
    Opt Express; 2017 Oct; 25(21):25183-25192. PubMed ID: 29041188
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Multinary I-III-VI2 and I2-II-IV-VI4 Semiconductor Nanostructures for Photocatalytic Applications.
    Regulacio MD; Han MY
    Acc Chem Res; 2016 Mar; 49(3):511-9. PubMed ID: 26864703
    [TBL] [Abstract][Full Text] [Related]  

  • 13. 3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells.
    Hill MO; Schmiedeke P; Huang C; Maddali S; Hu X; Hruszkewycz SO; Finley JJ; Koblmüller G; Lauhon LJ
    ACS Nano; 2022 Dec; 16(12):20281-20293. PubMed ID: 36378999
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Performance comparison of III-V//Si and III-V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding.
    Kao YC; Chou HM; Hsu SC; Lin A; Lin CC; Shih ZH; Chang CL; Hong HF; Horng RH
    Sci Rep; 2019 Mar; 9(1):4308. PubMed ID: 30867491
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications.
    Zong X; Hu H; Ouyang G; Wang J; Shi R; Zhang L; Zeng Q; Zhu C; Chen S; Cheng C; Wang B; Zhang H; Liu Z; Huang W; Wang T; Wang L; Chen X
    Light Sci Appl; 2020; 9():114. PubMed ID: 32637081
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.
    Fang YY; Xie J; Tolle J; Roucka R; D'Costa VR; Chizmeshya AV; Menendez J; Kouvetakis J
    J Am Chem Soc; 2008 Nov; 130(47):16095-102. PubMed ID: 19032100
    [TBL] [Abstract][Full Text] [Related]  

  • 17. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.
    Han Y; Li Q; Ng KW; Zhu S; Lau KM
    Nanotechnology; 2018 Jun; 29(22):225601. PubMed ID: 29517486
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.
    Kilpi OP; Svensson J; Wu J; Persson AR; Wallenberg R; Lind E; Wernersson LE
    Nano Lett; 2017 Oct; 17(10):6006-6010. PubMed ID: 28873310
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink.
    Gupta N; Wang S; Higashitarumizu N; Wang V; Lee K; Park C; Javey A
    Sci Adv; 2023 Dec; 9(49):eadi9384. PubMed ID: 38064551
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.
    Renard C; Molière T; Cherkashin N; Alvarez J; Vincent L; Jaffré A; Hallais G; Connolly JP; Mencaraglia D; Bouchier D
    Sci Rep; 2016 May; 6():25328. PubMed ID: 27142097
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.