These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
121 related articles for article (PubMed ID: 35517099)
1. Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories. Kim DS; Kim JE; Gill YJ; Park JW; Jang YJ; Kim YE; Choi H; Kwon O; Yeom GY RSC Adv; 2020 Sep; 10(59):36141-36146. PubMed ID: 35517099 [TBL] [Abstract][Full Text] [Related]
2. Etch characteristics of magnetic tunnel junction materials using H Kim JE; Kim DS; Gill YJ; Jang YJ; Kim YE; Cho H; Won BY; Kwon O; Yoon K; Choi JY; Park JG; Yeom GY Nanotechnology; 2021 Jan; 32(5):055301. PubMed ID: 33179607 [TBL] [Abstract][Full Text] [Related]
3. GeSe ovonic threshold switch: the impact of functional layer thickness and device size. Zhao J; Zhao Z; Song Z; Zhu M Sci Rep; 2024 Mar; 14(1):6685. PubMed ID: 38509187 [TBL] [Abstract][Full Text] [Related]
5. Etch characteristics of magnetic tunnel junction materials using bias pulsing in the CH4/N2O inductively coupled plasma. Jeon MH; Youn JY; Yang KC; Yun DH; Lee du Y; Shim TH; Park JG; Yeom GY J Nanosci Nanotechnol; 2014 Dec; 14(12):9541-7. PubMed ID: 25971096 [TBL] [Abstract][Full Text] [Related]
6. Ion-Enhanced Etching Characteristics of sp Li J; Kim Y; Han S; Chae H Materials (Basel); 2021 May; 14(11):. PubMed ID: 34072492 [TBL] [Abstract][Full Text] [Related]
7. In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF Hsiao SN; Sekine M; Hori M ACS Appl Mater Interfaces; 2023 Jul; 15(29):35622-35630. PubMed ID: 37439557 [TBL] [Abstract][Full Text] [Related]
8. Atomic Layer Deposition of Ge Yoo C; Kim W; Jeon JW; Park ES; Ha M; Lee YK; Hwang CS ACS Appl Mater Interfaces; 2020 May; 12(20):23110-23118. PubMed ID: 32345012 [TBL] [Abstract][Full Text] [Related]
9. Reactive ion etching of Si(x)Sb2Te in CF4/Ar plasma for nonvolatile phase-change memory device. Gu Y; Song S; Song Z; Cheng Y; Liu X; Du X; Liu B; Feng S J Nanosci Nanotechnol; 2013 Feb; 13(2):1594-7. PubMed ID: 23646688 [TBL] [Abstract][Full Text] [Related]
12. Surface Analysis of Amorphous Carbon Thin Film for Etch Hard Mask. Kim KP; Song WS; Park MK; Hong SJ J Nanosci Nanotechnol; 2021 Mar; 21(3):2032-2038. PubMed ID: 33404489 [TBL] [Abstract][Full Text] [Related]
13. Atomic layer deposition of GeSe films using HGeCl Kim W; Yoo S; Yoo C; Park ES; Jeon J; Kwon YJ; Woo KS; Kim HJ; Lee YK; Hwang CS Nanotechnology; 2018 Sep; 29(36):365202. PubMed ID: 29920183 [TBL] [Abstract][Full Text] [Related]
14. Selective etching of silicon nitride over silicon oxide using ClF Lee WO; Kim KH; Kim DS; Ji YJ; Kang JE; Tak HW; Park JW; Song HD; Kim KS; Cho BO; Kim YL; Yeom GY Sci Rep; 2022 Apr; 12(1):5703. PubMed ID: 35383214 [TBL] [Abstract][Full Text] [Related]
15. High-Density Patterning of InGaZnO by CH Kundu S; Decoster S; Bezard P; Nalin Mehta A; Dekkers H; Lazzarino F ACS Appl Mater Interfaces; 2022 Jul; ():. PubMed ID: 35850517 [TBL] [Abstract][Full Text] [Related]
16. An atomic hydrogen etching sensor for H van Leuken DPJ; de Meijere CA; van der Horst R; Banine VY; Osorio EA; Beckers J Rev Sci Instrum; 2021 Jun; 92(6):063518. PubMed ID: 34243512 [TBL] [Abstract][Full Text] [Related]
17. Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability. Wu R; Sun Y; Zhang S; Zhao Z; Song Z Nanomaterials (Basel); 2023 Mar; 13(6):. PubMed ID: 36986008 [TBL] [Abstract][Full Text] [Related]
18. Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition. Ohmi H; Sato J; Shirasu Y; Hirano T; Kakiuchi H; Yasutake K ACS Omega; 2019 Feb; 4(2):4360-4366. PubMed ID: 31459637 [TBL] [Abstract][Full Text] [Related]
19. Pseudo-Wet Plasma Mechanism Enabling High-Throughput Dry Etching of SiO Hsiao SN; Sekine M; Britun N; Mo MKT; Imai Y; Tsutsumi T; Ishikawa K; Iijima Y; Suda R; Yokoi M; Kihara Y; Hori M Small Methods; 2024 Jun; ():e2400090. PubMed ID: 38824668 [TBL] [Abstract][Full Text] [Related]
20. Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance. Adinolfi V; Cheng L; Laudato M; Clarke RC; Narasimhan VK; Balatti S; Hoang S; Littau KA ACS Nano; 2019 Sep; 13(9):10440-10447. PubMed ID: 31483611 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]