These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

147 related articles for article (PubMed ID: 35558330)

  • 1. Solution-processed amorphous ZrO
    Seon JB; Cho NK; Yoo G; Kim YS; Char K
    RSC Adv; 2018 Nov; 8(68):39115-39119. PubMed ID: 35558330
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
    Park JH; Yoo YB; Lee KH; Jang WS; Oh JY; Chae SS; Lee HW; Han SW; Baik HK
    ACS Appl Mater Interfaces; 2013 Aug; 5(16):8067-75. PubMed ID: 23883390
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Sol-Gel PMMA-ZrO
    Alvarado-Beltrán CG; Almaral-Sánchez JL; Mejia I; Quevedo-López MA; Ramirez-Bon R
    ACS Omega; 2017 Oct; 2(10):6968-6974. PubMed ID: 31457280
    [TBL] [Abstract][Full Text] [Related]  

  • 4. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
    Kim H; Kwack YJ; Yun EJ; Choi WS
    Sci Rep; 2016 Sep; 6():33576. PubMed ID: 27641430
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Thermal effect of annealing-temperature on solution-processed high-
    Zhou S; Zhang J; Fang Z; Ning H; Cai W; Zhu Z; Liang Z; Yao R; Guo D; Peng J
    RSC Adv; 2019 Dec; 9(72):42415-42422. PubMed ID: 35542877
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.
    Hwang SM; Lee SM; Choi JH; Lim JH; Joo J
    J Nanosci Nanotechnol; 2013 Nov; 13(11):7774-8. PubMed ID: 24245332
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.
    Park JH; Oh JY; Han SW; Lee TI; Baik HK
    ACS Appl Mater Interfaces; 2015 Mar; 7(8):4494-503. PubMed ID: 25664940
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Amorphous Strontium Titanate Film as Gate Dielectric for Higher Performance and Low Voltage Operation of Transparent and Flexible Organic Field Effect Transistor.
    Yadav S; Ghosh S
    ACS Appl Mater Interfaces; 2016 Apr; 8(16):10436-42. PubMed ID: 27029419
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F; Pham DV; Anselmann R; Bock C; Kunze U
    ACS Appl Mater Interfaces; 2015 Jul; 7(25):14011-7. PubMed ID: 26039187
    [TBL] [Abstract][Full Text] [Related]  

  • 11. A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.
    Cai W; Zhu Z; Wei J; Fang Z; Ning H; Zheng Z; Zhou S; Yao R; Peng J; Lu X
    Materials (Basel); 2017 Aug; 10(8):. PubMed ID: 28825652
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.
    Chu HC; Shen YS; Hsieh CH; Huang JH; Wu YH
    ACS Appl Mater Interfaces; 2015 Jul; 7(28):15129-37. PubMed ID: 26148216
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Low Temperature Solution-Processed Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors.
    Ha YG
    J Nanosci Nanotechnol; 2015 Sep; 15(9):6617-20. PubMed ID: 26716219
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Reliability Improvement in Solution-Processed ZrO₂ Dielectrics Due to Addition of H₂O₂.
    Kim M; Choi P; Lee J; Lim K; Hyeon Y; Koo K; Choi B
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5876-5881. PubMed ID: 29677709
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol-Gel Gate Dielectrics.
    Jo JW; Kim KH; Kim J; Ban SG; Kim YH; Park SK
    ACS Appl Mater Interfaces; 2018 Jan; 10(3):2679-2687. PubMed ID: 29280381
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
    Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
    ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Microstructure and dielectric characteristics of high-k tetragonal ZrO2 films with various thicknesses processed by sol-gel method.
    Hwang SM; Lee SM; Choi JH; Park K; Joo J; Lim JH; Kim H
    J Nanosci Nanotechnol; 2012 Apr; 12(4):3350-4. PubMed ID: 22849122
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Fully solution-induced high performance indium oxide thin film transistors with ZrO
    Zhu L; He G; Lv J; Fortunato E; Martins R
    RSC Adv; 2018 May; 8(30):16788-16799. PubMed ID: 35540525
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Optimizing Al-doped ZrO
    Song X; Xu J; Liu L; Deng Y; Lai PT; Tang WM
    Nanotechnology; 2020 Mar; 31(13):135206. PubMed ID: 31766028
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.