205 related articles for article (PubMed ID: 35594170)
1. Recent Progress in 1D Contacts for 2D-Material-Based Devices.
Choi MS; Ali N; Ngo TD; Choi H; Oh B; Yang H; Yoo WJ
Adv Mater; 2022 Sep; 34(39):e2202408. PubMed ID: 35594170
[TBL] [Abstract][Full Text] [Related]
2. Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects.
Liu X; Choi MS; Hwang E; Yoo WJ; Sun J
Adv Mater; 2022 Apr; 34(15):e2108425. PubMed ID: 34913205
[TBL] [Abstract][Full Text] [Related]
3. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook.
Kim JY; Ju X; Ang KW; Chi D
ACS Nano; 2023 Feb; 17(3):1831-1844. PubMed ID: 36655854
[TBL] [Abstract][Full Text] [Related]
4. Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics.
Kim KK; Lee HS; Lee YH
Chem Soc Rev; 2018 Aug; 47(16):6342-6369. PubMed ID: 30043784
[TBL] [Abstract][Full Text] [Related]
5. Fermi-Level Pinning-Free WSe
Jang J; Ra HS; Ahn J; Kim TW; Song SH; Park S; Taniguch T; Watanabe K; Lee K; Hwang DK
Adv Mater; 2022 May; 34(19):e2109899. PubMed ID: 35306686
[TBL] [Abstract][Full Text] [Related]
6. Forming Stable van der Waals Contacts between Metals and 2D Semiconductors.
Kwon G; Kim HS; Jeong K; Kim M; Nam GH; Park H; Yoo K; Cho MH
Small Methods; 2023 Sep; 7(9):e2300376. PubMed ID: 37291738
[TBL] [Abstract][Full Text] [Related]
7. One-Dimensional Edge Contacts to a Monolayer Semiconductor.
Jain A; Szabó Á; Parzefall M; Bonvin E; Taniguchi T; Watanabe K; Bharadwaj P; Luisier M; Novotny L
Nano Lett; 2019 Oct; 19(10):6914-6923. PubMed ID: 31513426
[TBL] [Abstract][Full Text] [Related]
8. Surface functional group modification induced partial Fermi level pinning and ohmic contact at borophene-MoS
Zou D; Zhao W; Xie W; Xu Y; Li X; Yang C
Phys Chem Chem Phys; 2020 Sep; 22(34):19202-19212. PubMed ID: 32812593
[TBL] [Abstract][Full Text] [Related]
9. High-Throughput Computational Screening of All-MXene Metal-Semiconductor Junctions for Schottky-Barrier-Free Contacts with Weak Fermi-Level Pinning.
Yan J; Cao D; Li M; Luo Q; Chen X; Su L; Shu H
Small; 2023 Nov; 19(44):e2303675. PubMed ID: 37381648
[TBL] [Abstract][Full Text] [Related]
10. Lowering the Contact Barriers of 2D Organic F
Yan H; Li Y; Qin JK; Xu B; Hu PA; Zhen L; Xu CY
Small; 2021 Apr; 17(17):e2007739. PubMed ID: 33739614
[TBL] [Abstract][Full Text] [Related]
11. A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS
Yang Z; Kim C; Lee KY; Lee M; Appalakondaiah S; Ra CH; Watanabe K; Taniguchi T; Cho K; Hwang E; Hone J; Yoo WJ
Adv Mater; 2019 Jun; 31(25):e1808231. PubMed ID: 31066475
[TBL] [Abstract][Full Text] [Related]
12. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
Lee GH; Cui X; Kim YD; Arefe G; Zhang X; Lee CH; Ye F; Watanabe K; Taniguchi T; Kim P; Hone J
ACS Nano; 2015 Jul; 9(7):7019-26. PubMed ID: 26083310
[TBL] [Abstract][Full Text] [Related]
13. Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX
Hu Y; Hu X; Wang Y; Lu C; Krasheninnikov AV; Chen Z; Sun L
J Phys Chem Lett; 2023 Mar; 14(11):2807-2815. PubMed ID: 36912604
[TBL] [Abstract][Full Text] [Related]
14. Modulating the Schottky barrier of MXenes/2D SiC contacts
Huang L; Deng X; Pan S; Cui W
Phys Chem Chem Phys; 2022 Sep; 24(35):20837-20847. PubMed ID: 36040139
[TBL] [Abstract][Full Text] [Related]
15. Black phosphorus transistors with van der Waals-type electrical contacts.
Quhe R; Wang Y; Ye M; Zhang Q; Yang J; Lu P; Lei M; Lu J
Nanoscale; 2017 Sep; 9(37):14047-14057. PubMed ID: 28894869
[TBL] [Abstract][Full Text] [Related]
16. One-dimensional semimetal contacts to two-dimensional semiconductors.
Li X; Wei Y; Wang Z; Kong Y; Su Y; Lu G; Mei Z; Su Y; Zhang G; Xiao J; Liang L; Li J; Li Q; Zhang J; Fan S; Zhang Y
Nat Commun; 2023 Jan; 14(1):111. PubMed ID: 36611034
[TBL] [Abstract][Full Text] [Related]
17. Tunable Schottky contacts in MSe
Lv X; Wei W; Zhao P; Li J; Huang B; Dai Y
Phys Chem Chem Phys; 2018 Jan; 20(3):1897-1903. PubMed ID: 29296994
[TBL] [Abstract][Full Text] [Related]
18. Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS
Yoon H; Lee S; Seo J; Sohn I; Jun S; Hong S; Im S; Nam Y; Kim HJ; Lee Y; Chung SM; Kim H
ACS Appl Mater Interfaces; 2024 Mar; 16(9):12095-12105. PubMed ID: 38384197
[TBL] [Abstract][Full Text] [Related]
19. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier.
Liu Y; Stradins P; Wei SH
Sci Adv; 2016 Apr; 2(4):e1600069. PubMed ID: 27152360
[TBL] [Abstract][Full Text] [Related]
20. Hydrogen-bonding enables two-dimensional metal/semiconductor tunable contacts approaching the quantum limit and the modified Schottky-Mott limit simultaneously.
Liu D; Liu Z; Zhu J; Zhang M
Mater Horiz; 2023 Nov; 10(12):5621-5632. PubMed ID: 37752785
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
