281 related articles for article (PubMed ID: 35604125)
1. Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.
Xue Q; Peng Y; Cao L; Xia Y; Liang J; Chen CC; Li M; Hang T
ACS Appl Mater Interfaces; 2022 Jun; 14(22):25710-25721. PubMed ID: 35604125
[TBL] [Abstract][Full Text] [Related]
2. Robust Ag/ZrO
Yan X; Qin C; Lu C; Zhao J; Zhao R; Ren D; Zhou Z; Wang H; Wang J; Zhang L; Li X; Pei Y; Wang G; Zhao Q; Wang K; Xiao Z; Li H
ACS Appl Mater Interfaces; 2019 Dec; 11(51):48029-48038. PubMed ID: 31789034
[TBL] [Abstract][Full Text] [Related]
3. Statistical Analysis of Uniform Switching Characteristics of Ta
Jin S; Kwon JD; Kim Y
Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771802
[TBL] [Abstract][Full Text] [Related]
4. Interface engineering in ZnO/CdO hybrid nanocomposites to enhanced resistive switching memory for neuromorphic computing.
Ghafoor F; Kim H; Ghafoor B; Rehman S; Asghar Khan M; Aziz J; Rabeel M; Faheem Maqsood M; Dastgeer G; Lee MJ; Farooq Khan M; Kim DK
J Colloid Interface Sci; 2024 Apr; 659():1-10. PubMed ID: 38157721
[TBL] [Abstract][Full Text] [Related]
5. Research on electronic synaptic simulation of HfO
Lin J; Liu H; Wang S
Nanotechnology; 2023 Oct; 35(1):. PubMed ID: 37751722
[TBL] [Abstract][Full Text] [Related]
6. Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO
Mahata C; Kang M; Kim S
Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33092042
[TBL] [Abstract][Full Text] [Related]
7. Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.
Ting YH; Chen JY; Huang CW; Huang TK; Hsieh CY; Wu WW
Small; 2018 Feb; 14(6):. PubMed ID: 29205791
[TBL] [Abstract][Full Text] [Related]
8. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
Zhao X; Song P; Gai H; Li Y; Ai C; Wen D
Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957
[TBL] [Abstract][Full Text] [Related]
9. Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators.
You BK; Kim JM; Joe DJ; Yang K; Shin Y; Jung YS; Lee KJ
ACS Nano; 2016 Oct; 10(10):9478-9488. PubMed ID: 27718554
[TBL] [Abstract][Full Text] [Related]
10. Multi-level Cells and Quantized Conductance Characteristics of Al
Lee Y; Park J; Chung D; Lee K; Kim S
Nanoscale Res Lett; 2022 Sep; 17(1):84. PubMed ID: 36057011
[TBL] [Abstract][Full Text] [Related]
11. A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory.
Chung H; Shin H; Park J; Sun W
Materials (Basel); 2022 Dec; 16(1):. PubMed ID: 36614520
[TBL] [Abstract][Full Text] [Related]
12. Resistive switching modulation by incorporating thermally enhanced layer in HfO
Li X; Feng Z; Zou J; Wu Z; Xu Z; Yang F; Zhu Y; Dai Y
Nanotechnology; 2023 Nov; 35(3):. PubMed ID: 37852218
[TBL] [Abstract][Full Text] [Related]
13. Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.
Mahata C; Ismail M; Kang M; Kim S
Nanoscale Res Lett; 2022 Jun; 17(1):58. PubMed ID: 35687194
[TBL] [Abstract][Full Text] [Related]
14. Multi-Level Resistive Switching in SnSe/SrTiO
Ho TL; Ding K; Lyapunov N; Suen CH; Wong LW; Zhao J; Yang M; Zhou X; Dai JY
Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35807964
[TBL] [Abstract][Full Text] [Related]
15. Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.
Zahoor F; Azni Zulkifli TZ; Khanday FA
Nanoscale Res Lett; 2020 Apr; 15(1):90. PubMed ID: 32323059
[TBL] [Abstract][Full Text] [Related]
16. Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching.
Li Y; Fuller EJ; Sugar JD; Yoo S; Ashby DS; Bennett CH; Horton RD; Bartsch MS; Marinella MJ; Lu WD; Talin AA
Adv Mater; 2020 Nov; 32(45):e2003984. PubMed ID: 32964602
[TBL] [Abstract][Full Text] [Related]
17. GeTe/MoTe
Khot AC; Nirmal KA; Dongale TD; Kim TG
Small; 2024 Jun; ():e2400791. PubMed ID: 38874088
[TBL] [Abstract][Full Text] [Related]
18. Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory.
Chang KC; Dai T; Li L; Lin X; Zhang S; Lai YC; Liu HJ; Syu YE
Nanoscale; 2020 Nov; 12(43):22070-22074. PubMed ID: 33030167
[TBL] [Abstract][Full Text] [Related]
19. Rational Design on Controllable Cation Injection with Improved Conductive-Bridge Random Access Memory by Glancing Angle Deposition Technology toward Neuromorphic Application.
Shih YC; Shen YC; Cheng YK; Chaudhary M; Yang TY; Yu YJ; Chueh YL
ACS Appl Mater Interfaces; 2021 Nov; 13(46):55470-55480. PubMed ID: 34775743
[TBL] [Abstract][Full Text] [Related]
20. Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO
Choi J; Kim S
Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 33003640
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]